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Materials 2018, 11(1), 150;

Spin Absorption Effect at Ferromagnet/Ge Schottky-Tunnel Contacts

Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka 560-8531, Japan
Center for Spintronics Research Network, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka 560-8531, Japan
Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Tokyo 158-0082, Japan
Author to whom correspondence should be addressed.
Received: 23 December 2017 / Revised: 10 January 2018 / Accepted: 15 January 2018 / Published: 17 January 2018
(This article belongs to the Special Issue Magnetoresistance Effects and Their Application to Spintronic Devices)
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We study the influence of the junction size in ferromagnet (FM)/semiconductor (SC) contacts on four-terminal nonlocal spin signals in SC-based lateral spin-valve (LSV) structures. When we use FM/Ge Schottky-tunnel junctions with relatively low resistance-area products, the magnitude of the nonlocal spin signal depends clearly on the junction size, indicating the presence of the spin absorption effect at the spin-injector contact. The temperature-dependent spin signal can also be affected by the spin absorption effect. For SC spintronic applications with a low parasitic resistance, we should consider the influence of the spin absorption on the spin-transport signals in SC-based device structures. View Full-Text
Keywords: semiconductor spintronics; germanium; spin absorption semiconductor spintronics; germanium; spin absorption

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Yamada, M.; Fujita, Y.; Yamada, S.; Sawano, K.; Hamaya, K. Spin Absorption Effect at Ferromagnet/Ge Schottky-Tunnel Contacts. Materials 2018, 11, 150.

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