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Open AccessArticle

Graphene as a Schottky Barrier Contact to AlGaN/GaN Heterostructures

1
CENTERA Laboratories, Institute of High Pressure Physics PAS, ul. Sokołowska 29/37, 01-142 Warsaw, Poland
2
V. E. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 41 pr. Nauki, 03680 Kyiv, Ukraine
3
CEZAMAT, Warsaw University of Technology, 02-822 Warsaw, Poland
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Institute of Optoelectronics, Military University of Technology, gen. Sylwestra Kaliskiego 2 Str., 00-908 Warsaw, Poland
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Institute of High Pressure Physics PAS, ul. Sokołowska 29/37, 01-142 Warsaw, Poland
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Faculty of Physics, Warsaw University of Technology, 00-662 Warsaw, Poland
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Laboratoire Charles Coulomb, University of Montpellier and CNRS UMR 5221, 34950 Montpellier, France
*
Author to whom correspondence should be addressed.
Materials 2020, 13(18), 4140; https://doi.org/10.3390/ma13184140
Received: 18 August 2020 / Revised: 12 September 2020 / Accepted: 14 September 2020 / Published: 17 September 2020
Electrical and noise properties of graphene contacts to AlGaN/GaN heterostructures were studied experimentally. It was found that graphene on AlGaN forms a high-quality Schottky barrier with the barrier height dependent on the bias. The apparent barrier heights for this kind of Schottky diode were found to be relatively high, varying within the range of φb = (1.0–1.26) eV. AlGaN/GaN fin-shaped field-effect transistors (finFETs) with a graphene gate were fabricated and studied. These devices demonstrated ~8 order of magnitude on/off ratio, subthreshold slope of ~1.3, and low subthreshold current in the sub-picoamperes range. The effective trap density responsible for the 1/f low-frequency noise was found within the range of (1–5) · 1019 eV−1 cm−3. These values are of the same order of magnitude as reported earlier and in AlGaN/GaN transistors with Ni/Au Schottky gate studied as a reference in the current study. A good quality of graphene/AlGaN Schottky barrier diodes and AlGaN/GaN transistors opens the way for transparent GaN-based electronics and GaN-based devices exploring vertical electron transport in graphene. View Full-Text
Keywords: graphene; AlGaN/GaN; Schottky diode; field-effect transistor; finFET; noise graphene; AlGaN/GaN; Schottky diode; field-effect transistor; finFET; noise
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MDPI and ACS Style

Dub, M.; Sai, P.; Przewłoka, A.; Krajewska, A.; Sakowicz, M.; Prystawko, P.; Kacperski, J.; Pasternak, I.; Cywiński, G.; But, D.; Knap, W.; Rumyantsev, S. Graphene as a Schottky Barrier Contact to AlGaN/GaN Heterostructures. Materials 2020, 13, 4140. https://doi.org/10.3390/ma13184140

AMA Style

Dub M, Sai P, Przewłoka A, Krajewska A, Sakowicz M, Prystawko P, Kacperski J, Pasternak I, Cywiński G, But D, Knap W, Rumyantsev S. Graphene as a Schottky Barrier Contact to AlGaN/GaN Heterostructures. Materials. 2020; 13(18):4140. https://doi.org/10.3390/ma13184140

Chicago/Turabian Style

Dub, Maksym; Sai, Pavlo; Przewłoka, Aleksandra; Krajewska, Aleksandra; Sakowicz, Maciej; Prystawko, Paweł; Kacperski, Jacek; Pasternak, Iwona; Cywiński, Grzegorz; But, Dmytro; Knap, Wojciech; Rumyantsev, Sergey. 2020. "Graphene as a Schottky Barrier Contact to AlGaN/GaN Heterostructures" Materials 13, no. 18: 4140. https://doi.org/10.3390/ma13184140

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