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Open AccessArticle

Investigation on Temperature Dependency of Recessed-Channel Reconfigurable Field-Effect Transistor

1
Inter-university Semiconductor Research Center, Department of Electrical and with the Department of Computer Engineering, Seoul National University, Seoul 08826, Korea
2
Department of Electrical and Computer Engineering, Ajou University, Suwon 16499, Korea
*
Author to whom correspondence should be addressed.
Electronics 2019, 8(10), 1124; https://doi.org/10.3390/electronics8101124
Received: 11 September 2019 / Revised: 29 September 2019 / Accepted: 29 September 2019 / Published: 6 October 2019
(This article belongs to the Special Issue New CMOS Devices and Their Applications)
Current-voltage (I-V) characteristics of a recessed-channel reconfigurable field-effect transistor (RC-RFET) is discussed, herein, depending on the variation of temperature (T) to understand the operation mechanisms, in depth. Assuming that RC-RFET can be simply modeled as a channel resistance (RCH) and a Schottky contact resistance (RSC) connected in series, the validity has been examined by a technology computer-aided design (TCAD) simulation with different Schottky barrier heights (SBHs) and carrier mobilities (μ). As a result, it was clearly determined that the drain current (ID) of RC-RFET is dominated by the bigger component, since RCH and RSC have an opposite correlation with T.
Keywords: recessed-channel; reconfigurable field-effect transistor; RC-RFET; Schottky contact recessed-channel; reconfigurable field-effect transistor; RC-RFET; Schottky contact
MDPI and ACS Style

Kim, J.H.; Kim, S. Investigation on Temperature Dependency of Recessed-Channel Reconfigurable Field-Effect Transistor. Electronics 2019, 8, 1124.

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