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Tuning of Schottky Barrier Height at NiSi/Si Contact by Combining Dual Implantation of Boron and Aluminum and Microwave Annealing

1
State Key Laboratory of ASIC and System, Fudan University, Shanghai 200433, China
2
Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Science, Beijing 100029, China
3
Process Application, Applied Materials, Inc., Gloucester, MA 01930, USA
*
Authors to whom correspondence should be addressed.
Materials 2018, 11(4), 471; https://doi.org/10.3390/ma11040471
Received: 4 March 2018 / Revised: 17 March 2018 / Accepted: 21 March 2018 / Published: 22 March 2018
Dopant-segregated source/drain contacts in a p-channel Schottky-barrier metal-oxide semiconductor field-effect transistor (SB-MOSFET) require further hole Schottky barrier height (SBH) regulation toward sub-0.1 eV levels to improve their competitiveness with conventional field-effect transistors. Because of the solubility limits of dopants in silicon, the requirements for effective hole SBH reduction with dopant segregation cannot be satisfied using mono-implantation. In this study, we demonstrate a potential solution for further SBH tuning by implementing the dual implantation of boron (B) and aluminum (Al) in combination with microwave annealing (MWA). By using such a method, not only has the lowest hole SBH ever with 0.07 eV in NiSi/n-Si contacts been realized, but also the annealing duration of MWA was sharply reduced to 60 s. Moreover, we investigated the SBH tuning mechanisms of the dual-implanted diodes with microwave annealing, including the dopant segregation, activation effect, and dual-barrier tuning effect of Al. With the selection of appropriate implantation conditions, the dual implantation of B and Al combined with the MWA technique shows promise for the fabrication of future p-channel SB-MOSFETs with a lower thermal budget. View Full-Text
Keywords: Schottky barrier height; SB-MOSFET; dopant segregation; microwave annealing; dual implantation Schottky barrier height; SB-MOSFET; dopant segregation; microwave annealing; dual implantation
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MDPI and ACS Style

Sun, F.; Li, C.; Fu, C.; Zhou, X.; Luo, J.; Zou, W.; Qiu, Z.-J.; Wu, D. Tuning of Schottky Barrier Height at NiSi/Si Contact by Combining Dual Implantation of Boron and Aluminum and Microwave Annealing. Materials 2018, 11, 471.

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