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Article

Rectifying Characteristics of Thermally Treated Mo/SiC Schottky Contact

Department of Electrical Engineering, Gachon University, Seongnam-si 13120, Korea
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Author to whom correspondence should be addressed.
Coatings 2019, 9(6), 388; https://doi.org/10.3390/coatings9060388
Received: 27 May 2019 / Revised: 12 June 2019 / Accepted: 13 June 2019 / Published: 15 June 2019
The rectifying characteristics of a Mo/SiC Schottky contact fabricated by facing targets sputtering system were investigated through current–voltage measurement. The Schottky diode parameters were extracted from the forward current–voltage characteristic curve by the Cheung and Cheung method and the Norde method. The as-deposited Mo/SiC Schottky contacts possessed Schottky barrier heights of 1.17 and 1.22 eV, respectively. The Schottky barrier heights of the diodes were decreased to 1.01 and 0.91 eV after annealing at 400 °C for 30 min. The ideality factor was increased from 1.14 and 1.08 to 1.51 and 1.41, respectively. This implies the presence of non-ideal behaviors due to a current transport mechanism other than ideal thermionic emission, and the non-ideal behaviors increased as a result of excessive thermal annealing. In contrast, only a negligible change was observed in the crystallographic characteristics. This result suggests that the reason for the deviation from the ideal rectifying characteristics of the Mo/SiC Schottky contact through the annealing process was the variation in the current transport mechanism, including recombination, tunneling, and/or minority carrier injection. View Full-Text
Keywords: silicon carbide; molybdenum; Schottky diode; thermal treatment; facing targets sputtering system silicon carbide; molybdenum; Schottky diode; thermal treatment; facing targets sputtering system
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MDPI and ACS Style

Hong, J.; Kim, K.H.; Kim, K.H. Rectifying Characteristics of Thermally Treated Mo/SiC Schottky Contact. Coatings 2019, 9, 388. https://doi.org/10.3390/coatings9060388

AMA Style

Hong J, Kim KH, Kim KH. Rectifying Characteristics of Thermally Treated Mo/SiC Schottky Contact. Coatings. 2019; 9(6):388. https://doi.org/10.3390/coatings9060388

Chicago/Turabian Style

Hong, Jeongsoo, Ki H. Kim, and Kyung H. Kim. 2019. "Rectifying Characteristics of Thermally Treated Mo/SiC Schottky Contact" Coatings 9, no. 6: 388. https://doi.org/10.3390/coatings9060388

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