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Open AccessArticle

Performance Enhancement of a GaAs Detector with a Vertical Field and an Embedded Thin Low-Temperature Grown Layer

1
Optical Sciences Division, U.S. Naval Research Laboratory, Washington, DC 20375, USA
2
Electrical and Computer Engineering Department, Drexel University, Philadelphia, PA 19104, USA
3
IMM-CNR, Unit of Lecce, Via Monteroni, I-73100 Lecce, Italy
*
Author to whom correspondence should be addressed.
Sensors 2013, 13(2), 2475-2483; https://doi.org/10.3390/s130202475
Received: 17 December 2012 / Revised: 6 February 2013 / Accepted: 8 February 2013 / Published: 18 February 2013
(This article belongs to the Special Issue Photodetectors)
Low temperature growth of GaAs (LT-GaAs) near 200 °C results in a recombination lifetime of nearly 1 ps, compared with approximately 1 ns for regular temperature ~600 °C grown GaAs (RT-GaAs), making it suitable for ultra high speed detection applications. However, LT-GaAs detectors usually suffer from low responsivity due to low carrier mobility. Here we report electro-optic sampling time response measurements of a detector that employs an AlGaAs heterojunction, a thin layer of LT-GaAs, a channel of RT-GaAs, and a vertical electric field that together facilitate collection of optically generated electrons while suppressing collection of lower mobility holes. Consequently, these devices have detection efficiency near that of RT-GaAs yet provide pulse widths nearly an order of magnitude faster—~6 ps for a cathode-anode separation of 1.3 μm and ~12 ps for distances more than 3 μm. View Full-Text
Keywords: photodetector; photodiode; GaAs; low-temperature grown GaAs; electro-optic sampling; ultrafast detector; heterojunction; Schottky contact photodetector; photodiode; GaAs; low-temperature grown GaAs; electro-optic sampling; ultrafast detector; heterojunction; Schottky contact
MDPI and ACS Style

Currie, M.; Dianat, P.; Persano, A.; Martucci, M.C.; Quaranta, F.; Cola, A.; Nabet, B. Performance Enhancement of a GaAs Detector with a Vertical Field and an Embedded Thin Low-Temperature Grown Layer. Sensors 2013, 13, 2475-2483.

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