- Article
SiC Doping Impact during Conducting AFM under Ambient Atmosphere
- Christina Villeneuve-Faure,
- Abdelhaq Boumaarouf,
- Vishal Shah,
- Peter M. Gammon,
- Ulrike Lüders and
- Rosine Coq Germanicus
The characterization of silicon carbide (SiC) by specific electrical atomic force microscopy (AFM) modes is highly appreciated for revealing its structure and properties at a nanoscale. However, during the conductive AFM (C-AFM) measurements, the str...