Silk fibroin (SF) is a promising bio-compatible material for transient and bio-integrated memory devices; however, its relatively high leakage current and limited resistance state stability remain critical issues. In this study, Ag/SF–TiO
2/Pt bio-memristors were fabricated using SF–TiO
2 composite films with
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Silk fibroin (SF) is a promising bio-compatible material for transient and bio-integrated memory devices; however, its relatively high leakage current and limited resistance state stability remain critical issues. In this study, Ag/SF–TiO
2/Pt bio-memristors were fabricated using SF–TiO
2 composite films with TiO
2 nanoparticle concentrations of 0, 0.25, 0.5, and 1.0 wt%. SEM analysis showed that TiO
2 incorporation increased particle aggregation while maintaining continuous film morphology. Optical analyses revealed that TiO
2 nanoparticles reduced the apparent optical gap, enhanced sub-bandgap absorption, and suppressed photoluminescence intensity, indicating the formation of defect- and trap-related states. Electrical measurements demonstrated that TiO
2 incorporation effectively reduced leakage current and stabilized the high-resistance state. The devices exhibited stable bipolar resistive switching within ±1 V, with enhanced I
on/I
off ratios of approximately 10
4–10
5 after TiO
2 addition. Endurance and retention measurements confirmed reliable switching over 100 cycles and stable resistance states up to 10
4 s. Capacitance analysis further revealed resistance state-dependent charge storage behavior, with higher capacitance in the low-resistance state due to conductive filament formation and TiO
2-assisted interfacial polarization. These results indicate that TiO
2 nanoparticles effectively modulate charge trapping, leakage suppression, and memory stability in SF-based bio-memristors.
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