III-V Optoelectronics and Semiconductor Process Technology, Second Edition

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "D1: Semiconductor Devices".

Deadline for manuscript submissions: 31 January 2026 | Viewed by 402

Special Issue Editors


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Guest Editor
Institute of Advanced Semiconductor Packaging and Testing, College of Semiconductor and Advanced Technology Research, National Sun Yat-sen University, Kaohsiung 804201, Taiwan
Interests: III-V optoelectronics and semiconductor process technology; GaN-based optoelectronics devices; oxide semiconductor thin-film transistors
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Guest Editor

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Guest Editor
Department of Photonics, National Sun Yat-Sen University, Kaohsiung, Taiwan
Interests: Si photonics; semiconductor laser; semiconductor optical modulator; hybrid photonic integraton
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Wide-bandgap III-V semiconductor materials possess exceptional electrical and optical properties, making them highly promising candidates for a wide range of high-frequency, high-power, and optoelectronic devices. Researchers have extensively explored these materials for high-frequency RF amplifiers, high-power electronics, and CMOS transistors, due to their superior electron mobility and high breakdown voltage. In addition, their excellent optical properties, including high quantum efficiency and direct bandgap, have made them attractive for various optoelectronic applications, such as light-emitting diodes (LEDs), lasers, sensors, and photovoltaic cells.

The Special Issue “III-V Optoelectronics and Semiconductor Process Technology, Second Edition” in the Journal Micromachines invites high-quality contributions from both academia and industry. The topics covered include the epitaxial growth and fabrication of III-V semiconductors, device design and characterization, novel device concepts, and process technology for III-V-based devices. The Special Issue also covers the use of III-V materials in various applications, such as LEDs, lasers, photovoltaic cells, and sensors.

We look forward to receiving your submissions to this Special Issue.

Dr. Hsin-Chu Chen
Prof. Dr. Hao-Chung Kuo
Prof. Dr. Yi-Jen Chiu
Guest Editors

Manuscript Submission Information

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Keywords

  • III-V semiconductor epitaxial growth and fabrication
  • optoelectronics and semiconductor devices
  • integration process technology
  • III-V materials applications

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Published Papers (1 paper)

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Research

10 pages, 875 KiB  
Article
Optimising (Al,Ga) (As,Bi) Quantum Well Laser Structures for Reflectance Mode Pulse Oximetry
by Aivaras Špokas, Andrea Zelioli, Andrius Bičiūnas, Bronislovas Čechavičius, Justinas Glemža, Sandra Pralgauskaitė, Mindaugas Kamarauskas, Virginijus Bukauskas, Janis Spigulis, Yi-Jen Chiu, Jonas Matukas and Renata Butkutė
Micromachines 2025, 16(5), 506; https://doi.org/10.3390/mi16050506 - 26 Apr 2025
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Abstract
We explore quantum well laser diodes for applications in pulse oximetry based on two material systems, namely, classical AlGaAs and a rather exotic GaAsBi, with lasing at around 800 nm and 1100 nm, respectively. These spectral regions and material families were selected due [...] Read more.
We explore quantum well laser diodes for applications in pulse oximetry based on two material systems, namely, classical AlGaAs and a rather exotic GaAsBi, with lasing at around 800 nm and 1100 nm, respectively. These spectral regions and material families were selected due to their closely matched effective penetration depths into soft tissue. An improved design of the band structure of device active areas was tested on both material systems, yielding enhancement of the two main parameters, namely, output power and threshold current. A maximum emission power of the AlGaAs laser diode was registered at 4.9 mW (I = 60 mA, λ = 801 nm). For the GaAsBi-based devices, the target emission of 1106 nm was measured in pulsed mode with a peak output power of 9.4 mW (I = 3 A). The most optimized structure was based on three GaAsBi quantum wells surrounded by parabolically graded AlGaAs barriers. This structure was capable of 130 mW peak power (I = 2 A, λ = 1025 nm) along with a more than tenfold decrease in threshold current to 250 mA compared to a classical rectangular quantum well active region. Full article
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