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Micromachines
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Manufacturing and Application of Advanced Thin-Film-Based Device
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Manufacturing and Application of Advanced Thin-Film-Based Device

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "A：Physics".

Deadline for manuscript submissions: closed (30 April 2026) | Viewed by 8843

Special Issue Editor

Prof. Dr. Guo-Hua Feng

E-Mail Website
Guest Editor
Department of Power Mechanical Engineering, National Tsing Hua University, Hsinchu 300, Taiwan
Interests: piezoelectric film materials; electroactive material; microfabrication; wearable sensing devices; sensors; microactuators; ultrasonic transducers; intelligent machines
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Advanced devices benefit from thin-film technology, which is an intriguing topic in modern science and cutting-edge industry. Thin film refers to a thin layer of materials that ranges in thickness from several nanometers to a few micrometers, usually deposited on a substrate to provide spectacular functionality. Physical and chemical depositions have been used to produce high-quality films. Evaporation, sputtering, dip/spray coating, chemical vapor deposition, electro/electroless plating, chemical bath deposition, and the sol-gel technique are all effective methods for producing cutting-edge thin films. Advanced thin film devices exhibit vital applications such as transistors, integrated circuits, telecommunications devices, and energy devices in microelectronics. Lenses can also have coatings to enhance their transmission, refraction, and reflection optical qualities. Magnetic thin films are vital for data storage. Solar cells, photoconductors, and LEDs are key optoelectronic thin-film devices. Thin-film coatings also increase implant biocompatibility and give medical devices unique properties. Flexible substrates with functional thin film that can bend, fold, and roll are ideal for wearable gadgets and foldable displays. Accordingly, the purpose of this Special Issue is to showcase research papers, short communications, and review articles on novel developments in advanced thin-film devices, including but not limited to manufacturing strategies, thin film analysis, device characterization, and application performance.

Prof. Dr. Guo-Hua Feng
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 250 words) can be sent to the Editorial Office for assessment.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Micromachines is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2100 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • film manufacturing
  • film characterization
  • functionalized film
  • thin-film device
  • advance device application
  • micromachining process

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Related Special Issue

Published Papers (5 papers)

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Research

28 pages, 1753 KB  
Article
A Field-Driven Growth Model for Uniform Thin-Film Growth
by Helena Cristina Vasconcelos, Telmo Eleutério and Maria Meirelles
Micromachines 2026, 17(2), 220; https://doi.org/10.3390/mi17020220 - 6 Feb 2026
Viewed by 920
Abstract
Externally applied electric fields are widely employed during thin-film deposition to improve film uniformity, texture and densification. Despite extensive experimental evidence, the physical mechanisms by which such fields influence nucleation, surface diffusion, island coalescence and interface stability remain theoretically fragmented. Classical thin-film growth [...] Read more.
Externally applied electric fields are widely employed during thin-film deposition to improve film uniformity, texture and densification. Despite extensive experimental evidence, the physical mechanisms by which such fields influence nucleation, surface diffusion, island coalescence and interface stability remain theoretically fragmented. Classical thin-film growth models assume a field-free energetic landscape and therefore provide limited predictive guidance for field-assisted manufacturing strategies. In this work, we introduce the Field-Driven Growth Model (FDGM), a unified theoretical framework that incorporates field–matter interactions directly into the free-energy functional governing thin-film growth. By explicitly accounting for effective dipolar coupling arising from field-induced polarization of surface species, predominantly quadratic in the field amplitude and consistent with linear-response polarization, the model consistently modifies the fundamental processes of nucleation, surface diffusion and coalescence. At the continuum scale, the FDGM predicts a field-induced stabilization mechanism that suppresses long-wavelength roughening modes and defines a field-controlled morphological crossover wavelength (field-controlled cutoff). The FDGM demonstrates that field-assisted nucleation bias, anisotropic surface diffusion, field-biased coalescence pathways and morphological stabilization are not independent phenomena, but multiscale manifestations of a single energy-minimization principle acting on a field-modified energy landscape. By providing analytical stability criteria and explicit links between external field parameters and morphological outcomes, the model establishes a predictive foundation for the manufacturing of thin films with improved uniformity in advanced thin-film-based devices. The framework is broadly applicable to deposition techniques such as sputtering, pulsed-laser deposition, chemical vapor deposition and atomic layer deposition. Full article
(This article belongs to the Special Issue Manufacturing and Application of Advanced Thin-Film-Based Device)
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14 pages, 3687 KB  
Article
Flexible Mesh-Structured Single-Walled Carbon Nanotube Thermoelectric Generators with Enhanced Heat Dissipation for Wearable Applications
by Hiroto Nakayama, Takuya Amezawa, Yuta Asano, Shuya Ochiai, Keisuke Uchida, Yuto Nakazawa and Masayuki Takashiri
Micromachines 2026, 17(1), 139; https://doi.org/10.3390/mi17010139 - 22 Jan 2026
Cited by 2 | Viewed by 986
Abstract
Thermoelectric generators (TEGs) based on single-walled carbon nanotubes (SWCNTs) offer a promising approach for powering sensors in wearable systems. However, achieving high performance remains challenging because the high thermal conductivity of SWCNTs limits the temperature gradient within the device. We previously developed flexible [...] Read more.
Thermoelectric generators (TEGs) based on single-walled carbon nanotubes (SWCNTs) offer a promising approach for powering sensors in wearable systems. However, achieving high performance remains challenging because the high thermal conductivity of SWCNTs limits the temperature gradient within the device. We previously developed flexible SWCNT-TEGs with enhanced heat dissipation by dip-coating SWCNTs onto mesh sheets; however, their performance in real wearable environments had not been evaluated. In this study, we demonstrate the practical operation of these SWCNT-TEGs under conditions such as fingertip contact and cap-based wear. The output voltage increased proportionally with the number of fingers touching the device, and a stable voltage of 6.1 mV was obtained when the TEG was mounted on a cap and worn outdoors at 7 °C. These findings highlight the promising potential of flexible SWCNT-TEGs as power sources for next-generation wearable technologies, including human–computer interaction and health monitoring. Full article
(This article belongs to the Special Issue Manufacturing and Application of Advanced Thin-Film-Based Device)
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29 pages, 14906 KB  
Article
Hydrothermal Engineering of Ferroelectric PZT Thin Films Tailoring Electrical and Ferroelectric Properties via TiO2 and SrTiO3 Interlayers for Advanced MEMS
by Chun-Lin Li and Guo-Hua Feng
Micromachines 2025, 16(8), 879; https://doi.org/10.3390/mi16080879 - 29 Jul 2025
Cited by 4 | Viewed by 2269
Abstract
This work presents an innovative hydrothermal approach for fabricating flexible piezoelectric PZT thin films on 20 μm titanium foil substrates using TiO2 and SrTiO3 (STO) interlayers. Three heterostructures (Ti/PZT, Ti/TiO2/PZT, and Ti/TiO2/STO/PZT) were synthesized to enable low-temperature [...] Read more.
This work presents an innovative hydrothermal approach for fabricating flexible piezoelectric PZT thin films on 20 μm titanium foil substrates using TiO2 and SrTiO3 (STO) interlayers. Three heterostructures (Ti/PZT, Ti/TiO2/PZT, and Ti/TiO2/STO/PZT) were synthesized to enable low-temperature growth and improve ferroelectric performance for advanced flexible MEMS. Characterizations including XRD, PFM, and P–E loop analysis evaluated crystallinity, piezoelectric coefficient d33, and polarization behavior. The results demonstrate that the multilayered Ti/TiO2/STO/PZT structure significantly enhances performance. XRD confirmed the STO buffer layer effectively reduces lattice mismatch with PZT to ~0.76%, promoting stable morphotropic phase boundary (MPB) composition formation. This optimized film exhibited superior piezoelectric and ferroelectric properties, with a high d33 of 113.42 pm/V, representing an ~8.65% increase over unbuffered Ti/PZT samples, and displayed more uniform domain behavior in PFM imaging. Impedance spectroscopy showed the lowest minimum impedance of 8.96 Ω at 10.19 MHz, indicating strong electromechanical coupling. Furthermore, I–V measurements demonstrated significantly suppressed leakage currents in the STO-buffered samples, with current levels ranging from 10−12 A to 10−9 A over ±3 V. This structure also showed excellent fatigue endurance through one million electrical cycles, confirming its mechanical and electrical stability. These findings highlight the potential of this hydrothermally engineered flexible heterostructure for high-performance actuators and sensors in advanced MEMS applications. Full article
(This article belongs to the Special Issue Manufacturing and Application of Advanced Thin-Film-Based Device)
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15 pages, 3565 KB  
Article
pH Measurements Using Leaky Waveguides with Synthetic Hydrogel Films
by Victoria Wensley, Nicholas J. Goddard and Ruchi Gupta
Micromachines 2025, 16(2), 216; https://doi.org/10.3390/mi16020216 - 14 Feb 2025
Viewed by 1534
Abstract
Leaky waveguides (LWs) are low-refractive-index films deposited on glass substrates. In these, light can travel in the film while leaking out at the film–substrate interface. The angle at which light can travel in the film is dependent on its refractive index and thickness, [...] Read more.
Leaky waveguides (LWs) are low-refractive-index films deposited on glass substrates. In these, light can travel in the film while leaking out at the film–substrate interface. The angle at which light can travel in the film is dependent on its refractive index and thickness, which can change with pH when the film is made of pH-responsive materials. Herein, we report an LW comprising a waveguide film made of a synthetic hydrogel containing the monomers acrylamide and N-[3-(dimethylamino)propyl]methacrylamide (DMA) and a bisacrylamide crosslinker for pH measurements between 4 and 8. The response of the LW pH sensor was reversible and the response times were 0.90 ± 0.14 and 2.38 ± 0.22 min when pH was changed from low to high and high to low, respectively. The reported LW pH sensor was largely insensitive to typical concentrations of common interferents, including sodium chloride, urea, aluminum sulfate, calcium chloride, and humic acid. Compared to a glass pH electrode, the measurement range is smaller but is close to the range required for monitoring the pH of drinking water. The pH resolution of the hydrogel sensor was ~0.004, compared to ~0.01 for the glass electrode. Full article
(This article belongs to the Special Issue Manufacturing and Application of Advanced Thin-Film-Based Device)
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9 pages, 11690 KB  
Article
Improving TFT Device Performance by Changing the Thickness of the LZTO/ZTO Dual Active Layer
by Liang Guo, Suhao Wang, Xuefeng Chu, Chao Wang, Yaodan Chi and Xiaotian Yang
Micromachines 2024, 15(10), 1235; https://doi.org/10.3390/mi15101235 - 30 Sep 2024
Cited by 2 | Viewed by 2083
Abstract
The primary objective of this research paper is to explore strategies for enhancing the electrical performance of dual active layer thin film transistors (TFTs) utilizing LZTO/ZTO as the bilayer architecture. By systematically adjusting the thickness of the active layers, we achieved significant improvements [...] Read more.
The primary objective of this research paper is to explore strategies for enhancing the electrical performance of dual active layer thin film transistors (TFTs) utilizing LZTO/ZTO as the bilayer architecture. By systematically adjusting the thickness of the active layers, we achieved significant improvements in the performance of the LZTO/ZTO TFTs. An XPS analysis was performed to elucidate the impact of the varying O2 element distribution ratio within the LZTO/ZTO bilayer thin film on the TFTs performance, which was directly influenced by the modification in the active layer thickness. Furthermore, we utilized atomic force microscopy to analyze the effect of altering the active layer thickness on the surface roughness of the LZTO/ZTO bilayer film and the impact of this roughness on the TFTs electrical performance. Through the optimization of the ZTO active layer thickness, the LZTO/ZTO TFT exhibited an mobility of 10.26 cm2 V−1 s−1 and a switching current ratio of 5.7 × 107, thus highlighting the effectiveness of our approach in enhancing the electrical characteristics of the TFT device. Full article
(This article belongs to the Special Issue Manufacturing and Application of Advanced Thin-Film-Based Device)
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