Micromachines, Volume 16, Issue 12
2025 December - 122 articles
Cover Story: This study examines the reliability of 4H-SiC MOSFETs under realistic MHz-level switching and shows that their degradation behavior diverges sharply from traditional silicon reaction–diffusion expectations. By tracking threshold voltage instability during concurrent gate and drain stress, we find that the underlying mechanisms are dominated by electric field effects, reflected in a bias-dependent power-law time exponent and an unusual negative activation energy that intensifies degradation at lower temperatures. These results indicate that lifetime estimation based on a fixed exponent does not apply to SiC devices and emphasize the need for a field- and bias-aware approach to predicting time-to-failure in high-power converter environments. View this paper - Issues are regarded as officially published after their release is announced to the table of contents alert mailing list .
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