We performed a gradual low-temperature annealing up to 360 K on a CdZnTeSe radiation detector equipped with gold and indium electrodes under bias at both polarities. We observed significant changes in the detector’s resistance and space-charge...
Compared with conventional silicon-based semiconductors, amorphous oxide semiconductors present several advantages, including the possibility of room-temperature fabrication, excellent uniformity, high transmittance, and high electron mobility. Notab...
In recent years, indium-oxide thin-film transistors (IOTFTs) have been developed with high electron mobility, low power consumption, and good environmental stability. A major challenge in current IOTFTs research lies in developing high-performance de...
Flexible perovskite solar cells (PSCs) have received increasing attention in wearable and portable devices over the past ten years. The low-temperature process of electron transport layer plays a key role in fabricating flexible PSCs. In this paper,...
The interest in low processing temperature for printable transistors is rapidly increasing with the introduction of a new form factor in electronics and the growing importance of high throughput. This paper reports the fabrication of low-temperature-...
In the present work, an ultra-low carbon enamel steel was batch annealed at different temperatures, and the effect of the batch annealing temperature on the microstructure and resistance to fish scaling was investigated by optical microscopy, transmi...
The Schottky junction source/drain structure has great potential to replace the traditional p/n junction source/drain structure of the future ultra-scaled metal-oxide-semiconductor field effect transistors (MOSFETs), as it can form ultimately shallow...
Polycrystalline graphite contains multi-scale defects, which are difficult to anneal thermally because of the extremely high temperatures involved in the manufacturing process. In this study, we demonstrate annealing of nuclear graphite NBG-18 at tem...
To improve the low-temperature impact toughness of Q235B steel, this paper adopts a heat treatment method combining quenching and spheroidizing annealing to enhance its microstructure and properties and conducts a detailed analysis of the evolution o...
Microstructures are applied to various hydrophobic/hydrophilic surfaces due to the role of adjusting the surface wettability. In this paper, a 1064 nm pulsed picosecond laser was applied to prepare a micro/nano hierarchical structure on the surface o...
Industrial pure titanium was processed through 1–4 passes by equal-channel angular pressing (ECAP), and the processed samples were subsequently short-term annealed for 15 min at 300 °C, to achieve better mechanical properties for industrial...
The high demand for pressure devices with miniaturization and a wide bearing range has encouraged researchers to explore new high-performance sensors from different approaches. In this study, a sensitive element based on graphene in-plane compression...
In this study, the effects of decarburization annealing time on the primary recrystallization microstructure, the texture and the magnetic properties of the final product of 0.047% Nb low-temperature grain-oriented silicon steel were investigated by...
We investigate low-temperature (<200 °C) plasma-enhanced chemical vapor deposition (PECVD) for the formation of p–n junctions. Compared to the standard diffusion or implantation processes, silicon growth at low temperature by PECVD ensur...
In this study, four kinds of structures—[6,6]-phenyl-C61-butyric acid methyl ester (PCBM), PCBM/fullerene (C60), C60/bathocuproine (BCP), and PCBM/C60/BCP—were used as electron transport layers, and the structure, and optical and electronic behaviors...
The reactions between nickel and germanium are investigated by the incorporation of a titanium interlayer on germanium (100) substrate. Under microwave annealing (MWA), the nickel germanide layers are formed from 150 °C to 350 °C for 360 s in ambient...
The high thermal conductivity and stability, outstanding mechanical properties, and low weight make graphene suitable for many applications in the realm of thermal management, especially in high integration systems. Herein, we report a high-performan...
Low-temperature activation of oxide semiconductor materials such as In-Ga-Zn-O (IGZO) is a key approach for their utilization in flexible devices. We previously reported that the activation temperature can be reduced to 150 °C by hydrogen-doped I...
The structural and optical evolution of the ZnS thin films prepared by atomic layer deposition (ALD) from the diethylzinc (DEZ) and 1,5-pentanedithiol (PDT) as zinc and sulfur precursors was studied. A deposited ZnS layer (of about 60 nm) is amorphou...
Oxygen post annealing is a promising method for improving the quality of the SiC metal oxide semiconductor (MOS) interface without the introduction of foreign atoms. In addition, a low oxygen partial pressure annealing atmosphere would prevent the ad...
In this investigation, the effects of different annealing temperatures (180, 200, 220, 240, 260, and 280 °C) on the microstructure evolution and properties of an extruded Mg–2.0Zn–1.0Y–0.5Zr (wt%) magnesium alloys were determine...
In recent years, significant efforts have been devoted to the research and development of spin-coated Al2O3 thin films, due to their large band gaps, high breakdown voltage and stability at high annealing temperature. However, as the alumina precurso...
The effective diffusion of Cu in Fe is the key to forming a stable transition layer between copper and low-carbon steel, but it is seriously affected by several factors, especially temperature, and the diffusion of Cu can only be completed at high te...
Amorphous ferromagnetic materials in the form of microwires are of interest for the development of various sensors. This paper analyzes and argues for the use of microwires of two basic compositions of Co71Fe5B11Si10Cr3 and Fe3.9(4.9)Co64.82B10.2Si12...
The use of a low annealing temperature during the production of coils made from superconducting materials is very important because it reduces the production costs. In this study, the morphology, transport critical-current density (Jc), irreversible...
In this work, nanoporous antireflective coatings on silicate glass were obtained from silicon dioxide sol compositions by the sol-gel method in the presence of quaternary ammonium salt (tetrabutylammonium bromide) at different annealing temperatures...
We investigated the crystallinities of poly silicon (poly Si) annealed via green laser annealing (GLA) with a 532-nm pulsed laser and blue laser annealing (BLA) with 450-nm continuous-wave lasers. Three-dimensional heat transfer simulations were perf...
The effects of postprocessing annealing at 225 °C for 2 h on the creep properties of AlSi10Mg alloy were investigated through constant load experiments carried out at 150 °C, 175 °C and 225 °C. In the range of the experimental conditi...
Based on the research results, coefficients in constitutive equations, describing the kinetics of dynamic, meta-dynamic, and static recrystallization in high-carbon bainitic steel during hot deformation were determined. The developed mathematical mod...
We focus on ozone (O3) detection at ambient temperature by Zinc Oxide (ZnO) nanoparticles (NPs) deposited on Si/SiO2 by spin coating from colloidal solutions as sensitive layers for air quality monitoring. We establish that at room temperature using...
We present the synthesis of the Ti2AlN MAX phase using two-step annealing at temperatures of 600 °C and 1100 °C, the lowest synthesis temperatures reported so far. After the successful synthesis of the Ti2AlN MAX phase, two-dimensional Ti2N M...
Nano-logic magnetic structures are of great interest for spintronic applications. While the methods used for developing arrays of magnetic L10-phase dots are, in most cases, based on deposition followed by annealing at high temperatures, usually arou...
In this present work, laser welding experiments were carried out on 1 mm thin Ti6Al4V sheets using a low power Nd-YAG laser machine without using any filler wire and without edge preparation of welding specimens. The influence of different major proc...
Direct wafer bonding is one of the most attractive techniques for next-generation semiconductor devices, and plasma has been playing an indispensable role in the wider adoption of the wafer bonding technique by lowering its process temperature. Altho...
Ferroelectric poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) copolymer 70/30 thin films are prepared by spin coating. The crystalline structure of these films is investigated by varying the annealing temperature from the ferroelectric phas...
Two different concentrations of CdCl2 and (NH2)2CS were used to prepare CdS thin films, to be deposited on glass substrate by chemical bath deposition (CBD) technique. CdCl2 (0.000312 M and 0.000625 M) was employed as a source of Cd2+ while (NH2)2CS...
Silicon carbide (SiC) has become a promising optical material for quantum photonics and nonlinear photonics during the past decade. In this work, we propose two methods to improve the 4H-SiC thin film quality for SiC integrated photonic chips. Firstl...
AISI 430 ferritic stainless steel with different initial microstructures was low-temperature plasma nitrided to improve its hardness and wear resistance in the present investigation. The microstructure and properties of the low-temperature nitrided l...
Polyamide 11 (PA 11) samples of different supermolecular structure, including the crystal-free glass and semi-crystalline PA 11 of largely different semi-crystalline morphology, were prepared by fast scanning chip calorimetry (FSC). These samples wer...
AlGaN/GaN high electron mobility transistors (HEMTs) are regarded as promising candidates for a 5G communication system, which demands higher frequency and power. Source/drain ohmic contact is one of the key fabrication processes crucial to the devic...
The influence of decreased temperature of tensile testing on annealing-induced hardening (AIH) and deformation-induced softening (DIS) effects has been studied in an ultrafine-grained (UFG) Al–Zr alloy produced by high-pressure torsion. We show...
Amorphous TiO2 thin films were respectively annealed by 13.56 MHz radio frequency (RF) atmospheric pressure plasma at discharge powers of 40, 60, 80 W and thermal treatment at its corresponding substrate temperature (Ts). Ts was estimated through thr...
A low-temperature solution-processed high-k gate dielectric layer for use in a high-performance solution-processed semiconducting polymer organic thin-film transistor (OTFT) was demonstrated. Photochemical activation of sol-gel-derived AlOx films und...
In this paper, we demonstrated the shallow NiSiGe Schottky junction on the SiGe P-channel by using low-temperature microwave annealing. The NiSiGe/n-Si Schottky junction was formed for the Si-capped/SiGe multi-layer structure on an n-Si substrate (S...
In this study, the fabrication of microfluidic chips through the bonding of poly (methyl methacrylate) (PMMA) boards featuring designed patterns to create a three-dimensional sandwich structure with embedded microchannels was explored. A key focus wa...
Spheroidizing annealing is a critical heat treatment process for high-carbon steels to balance hardness and machinability. This study develops a rapid spheroidizing annealing process by employing low-temperature pretreatment followed by subcritical h...
In this study, a superelastic Ti-18Zr-15Nb (at. %) alloy was subjected to thermomechanical treatment, including cold rotary forging, intermediate annealing, cold drawing, post-deformation annealing, and additional low-temperature aging. As a result o...
We discuss the quantum annealing of the fully-connected ferromagnetic p-spin model in a dissipative environment at low temperature. This model, in the large p limit, encodes in its ground state the solution to the Grover’s problem of searching in uns...
Addressing the urgent need for low-temperature processes in the manufacturing of flexible vehicle-mounted touch display devices, this study investigates the process–structure–performance relationships of indium tin oxide (ITO) thin films...
Two-dimensional (2D) material-based devices are expected to operate under high temperatures induced by Joule heating and environmental conditions when integrated into compact integrated circuits for practical applications. However, the behavior of th...
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