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Article

Low-Temperature Annealing of CdZnTeSe under Bias

1
Faculty of Mathematics and Physics, Charles University, Ke Karlovu 3, 12116 Prague, Czech Republic
2
Tandon School of Engineering, New York University, Brooklyn, NY 11201, USA
3
Savannah River National Laboratory, Savannah River Site, Aiken, SC 29808, USA
*
Author to whom correspondence should be addressed.
Academic Editor: Fabio Principato
Sensors 2022, 22(1), 171; https://doi.org/10.3390/s22010171
Received: 16 November 2021 / Revised: 23 December 2021 / Accepted: 24 December 2021 / Published: 28 December 2021
(This article belongs to the Special Issue CdZnTe Radiation Detectors and Applications)
We performed a gradual low-temperature annealing up to 360 K on a CdZnTeSe radiation detector equipped with gold and indium electrodes under bias at both polarities. We observed significant changes in the detector’s resistance and space-charge accumulation. This could potentially lead to the control and improvement of the electronic properties of the detector because the changes are accompanied with the reduction in the bulk dark current and surface leakage current. In this article, we present the results of a detailed study of the internal electric field and conductivity changes in CdZnTeSe detector for various annealing steps under bias taking into account different polarities during annealing and subsequent characterization. We observed that low-temperature annealing results in an increase in the barrier height at the contacts that, in general, reduces the dark current and decreases the positive space charge present in the sample compared to the pre-annealed condition. View Full-Text
Keywords: CdZnTeSe; radiation detector; electrodes; low-temperature annealing; space charge CdZnTeSe; radiation detector; electrodes; low-temperature annealing; space charge
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MDPI and ACS Style

Rejhon, M.; Dedic, V.; Grill, R.; Franc, J.; Roy, U.N.; James, R.B. Low-Temperature Annealing of CdZnTeSe under Bias. Sensors 2022, 22, 171. https://doi.org/10.3390/s22010171

AMA Style

Rejhon M, Dedic V, Grill R, Franc J, Roy UN, James RB. Low-Temperature Annealing of CdZnTeSe under Bias. Sensors. 2022; 22(1):171. https://doi.org/10.3390/s22010171

Chicago/Turabian Style

Rejhon, Martin, Vaclav Dedic, Roman Grill, Jan Franc, Utpal N. Roy, and Ralph B. James. 2022. "Low-Temperature Annealing of CdZnTeSe under Bias" Sensors 22, no. 1: 171. https://doi.org/10.3390/s22010171

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