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Open AccessArticle

Effect of Zirconium Doping on Electrical Properties of Aluminum Oxide Dielectric Layer by Spin Coating Method with Low Temperature Preparation

1
State Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou 510641, China
2
State Key Laboratory of Mechanical Structural Mechanics and Control, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China
3
Faculty of Intelligent Manufacturing, Wuyi University, Jiangmen 529000, China
*
Authors to whom correspondence should be addressed.
Coatings 2020, 10(7), 620; https://doi.org/10.3390/coatings10070620
Received: 9 June 2020 / Revised: 26 June 2020 / Accepted: 28 June 2020 / Published: 29 June 2020
(This article belongs to the Special Issue Science and Technology of Flexible Films and Devices)
In recent years, significant efforts have been devoted to the research and development of spin-coated Al2O3 thin films, due to their large band gaps, high breakdown voltage and stability at high annealing temperature. However, as the alumina precursor has a large surface energy, substrates need to be treated by plasma before spin coating. Therefore, to avoid the expensive and process-complicated plasma treatment, we incorporated zirconium nitrate into the aluminum nitrate solution to decrease the surface energy of the precursor which improve the spreadability. Then, the electrical performances and the surface morphologies of the films were measured. For comparison, the pure Al2O3 films with plasma treatments were also prepared. As a result, after low temperature annealing (200 °C), the relative dielectric constant of Zr–AlOx spin-coated thin-film MIM (Metal-Insulator-Metal) devices can reach 12 and the leakage current density is not higher than 7.78 × 10−8 A/cm2 @ 1 MV/cm when the concentration of zirconium nitrate is 0.05 mol/L. The Aluminum oxide film prepared by zirconium doping has higher stability and better electrical properties than the pure films with plasma treatments and high performance can be attained under low-temperature annealing, which shows its potential application in printing and flexible electronic devices. View Full-Text
Keywords: zirconium doping; aluminum oxide; spin coating; low temperature annealing; dielectric layer zirconium doping; aluminum oxide; spin coating; low temperature annealing; dielectric layer
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MDPI and ACS Style

Zhou, Y.; Liang, Z.; Yao, R.; Zuo, W.; Zhou, S.; Zhu, Z.; Wang, Y.; Qiu, T.; Ning, H.; Peng, J. Effect of Zirconium Doping on Electrical Properties of Aluminum Oxide Dielectric Layer by Spin Coating Method with Low Temperature Preparation. Coatings 2020, 10, 620.

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