It is demonstrated that transparent amorphous oxide semiconductors (TAOS) can be excellent thermoelectric (TE) materials, since their thermal conductivity (κ) through a randomly disordered structure is quite low, while their electrical conducti...
As the typical representative of amorphous oxide semiconductors (AOS), quaternary indium gallium zinc oxide (IGZO) has been applied as the active layer of thin-film transistors (TFTs), but their mobility is still low (usually ~10 cm2/Vs). IGTO is rep...
The Tauc–Lorentz–Urbach (TLU) dispersion model allows us to build a dielectric function from only a few parameters. However, this dielectric function is non-analytic and presents some mathematical drawbacks. As a consequence of this issue...
In this work, we study the influence of the geometry of a thin film on its transmission spectrum, as measured on amorphous As-based chalcogenide layers grown onto 1-mm-thick soda-lime-silica glass substrates. A new method is suggested for a comprehen...
In this paper, we present an empirical modeling procedure to capture gate bias dependency of amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) while considering contact resistance and disorder effects at room temperature. From the meas...
High-performance oxide transistors have recently attracted significant attention for use in various electronic applications, such as displays, sensors, and back-end-of-line transistors. In this study, we demonstrate atomically thin indium–oxide...
Amorphous oxide semiconductors (AOSs) are interesting materials which combine optical transparency with high electron mobility. AOSs can be prepared at low temperatures by high throughput deposition techniques such as magnetron sputtering and are thu...
In this work, we show the performance improvement of p-type thin-film transistors (TFTs) with Ge 2 Sb 2 Te 5 (GST) semiconductor layers on flexible polyimide substrates, achieved by downscaling of the GST thickness. Prior works...
The limited choice of materials for large area electronics limits the expansion of applications. Polycrystalline silicon (poly-Si) and indium gallium zinc oxide (IGZO) lead to thin-film transistors (TFTs) with high field-effect mobilities (>10 cm2...
The nitrogen-doped amorphous oxide semiconductor (AOS) thinfilm transistors (TFTs) with double-stacked channel layers (DSCL) were prepared and characterized. The DSCL structure was composed of nitrogen-doped amorphous InGaZnO and InZnO films (a-IGZO:...
The combination of magnetic and semiconducting properties in one material system has great potential for integration of emerging spintronics with conventional semiconductor technology. One standard route for the synthesis of magnetic semiconductors i...
Amorphous carbon (a-C) films are attracting considerable attention to due their large optical band gap (Eopt) range of 1–4 eV. But the hopping conducting mechanism of boron doping a-C (a-C:B) is still mysterious. To exploring the intrinsic reas...
Gallium oxide (Ga2O3) is an emerging wide bandgap semiconductor promising a wide range of important applications. However, mass production of high-quality crystalline Ga2O3 still suffers from limitations associated with poor reproducibility and low e...
Electron transporting layers facilitating electron extraction and suppressing hole recombination at the cathode are crucial components in any thin-film solar cell geometry, including that of metal–halide perovskite solar cells. Amorphous tantal...
Solution-processed metal oxides have been investigated as an alternative to vacuum-based oxides to implement low-cost, high-performance electronic devices on flexible transparent substrates. However, their electrical properties need to be enhanced to...
We have fabricated amorphous tin oxide (a-SnOx) thin-film transistors (TFTs) with Al2O3 gate insulator from deep eutectic solvents (DESs). DESs were formed using the chloride derivates of each precursor (SnCl2, or AlCl3) mixed with urea. The DESs wer...
The integration of 4 nm thick amorphous indium tungsten oxide (a-IWO) and a hafnium oxide (HfO2) high-κ gate dielectric has been demonstrated previously as one of promising amorphous oxide semiconductor (AOS) thin-film transistors (TFTs). In this stu...
To utilize continuous ultralow intensity signals from oxide synaptic transistors as artificial synapses that mimic human visual perception, we propose strategic oxide channels that optimally utilize their advantageous functions by stacking two oxide...
The effects of solution concentration and temperature on the electrochemical behavior of the Fe-based amorphous (AMCs) coatings in NaCl solution were studied by using conventional electrochemical measurement and XPS analysis. Results indicated that a...
There have been significant differences in principle electrical parameters between amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) and silicon-based devices for their distinct conduction mechanisms. Additionally, threshold voltage is...
Flexible electronics enable various technologies to be integrated into daily life and fuel the quests to develop revolutionary applications, such as artificial skins, intelligent textiles, e-skin patches, and on-skin displays. Mechanical characterist...
The model of multiple trapping into energy-distributed states is a successful tool to describe the transport of nonequilibrium charge carriers in amorphous semiconductors. Under certain conditions, the model leads to anomalous diffusion equations tha...
4 February 2022
This study aimed to elucidate the physicochemical characteristics and occupational exposure of silica powder and airborne particles as byproducts generated from the first scrubbers of chemical vapor deposition and diffusion processes during maintenan...
Several studies on amorphous oxide semiconductor thin-film transistors (TFTs) applicable to next-generation display devices have been conducted. To improve the poor switching characteristics and gate bias stability of co-sputtered aluminum–indi...
The 29th International Conference on Amorphous and Nanocrystalline Semiconductors served as a continuation of the biennial conference that has been held since 1965 [...]
Amorphous indium gallium zinc oxide (a-IGZO) is becoming an increasingly important technological material. Transport in this material is conceptualized as the heavy disorder of the material causing a conduction or mobility band-edge that randomly var...
YBa2Cu3O6+x (YBCO) cuprates are semiconductive when oxygen depleted (x < 0.5). They can be used for uncooled thermal detection in the near-infrared: (i) low temperature deposition on silicon substrates, leading to an amorphous phase (a-YBCO); (ii)...
Electrical and carrier transport properties in In–Ga–Zn–O thin-film transistors (IGZO TFTs) with a heterojunction channel were investigated. For the heterojunction IGZO channel, a high-In composition IGZO layer (IGZO-high-In) was de...
The thermoelectric properties of In−Sn−O (ITO) thin films were estimated in relation to microstructures with various zinc concentrations. The zinc-doped ITO (ITO:Zn) thin films were amorphized with increasing zinc concentration. The carri...
Several, nearly-1-µm-thick, pure, unhydrogenated amorphous-silicon (a-Si) thin layers were grown at high rates by non-equilibrium rf-magnetron Ar-plasma sputtering (RFMS) onto room-temperature low-cost glass substrates. A new approach is employed for...
Using the potentiostatic electrodeposition technique, zinc telluride nanocrystalline thin films and an array of nanowires were synthesized in a citric acid bath. Electrodeposited zinc telluride thin films with stoichiometric compositions were obtaine...
The movement of a micro cantilever was detected via a self constructed portable data acquisition prototype system which integrates a linear array of 32 1D amorphous silicon position sensitive detectors (PSD). The system was mounted on a microscope us...
A comprehensive study on the ternary dielectric, LaGdO3, synthesized and qualified in our laboratory as a novel high-k dielectric material for logic and memory device applications in terms of its excellent features that include a high linear dielectr...
In the present work a-SiC:H thin films were prepared using magnetron sputtering technique for different substrate temperatures from 100 °C to 290 °C. Their optical properties were studied using the ellipsometry technique. The experimental res...
A composite photocatalyst of ceria–cadmium supported on mesoporous SBA-15 silica was synthesized and employed for the aqueous methylene blue (MB) degradation. The composites were prepared using an incipient wetness impregnation technique and a...
In this research, a passivated methodology was proposed for achieving good electrical characteristics for back-channel-etch (BCE) typed amorphous Si-Sn-O thin film transistors (a-STO TFTs). This methodology implied that the thermal annealing (i.e., p...
Amorphous In−Ga−Zn−O (a-IGZO) has been studied as a channel layer in thin-film transistors (TFTs). To improve the bias-induced instability of a-IGZO TFTs, we introduced yttrium with high bond enthalpy by magnetron co-sputtering syst...
The effect of intrinsic stress on the structure and physical properties of silicon-tin-oxide (STO) films have been investigated. Since a state of tensile stress is available in as-deposited films, the value of stress can be exponentially enhanced whe...
This paper presents a fully transparent and sensitivity-programmable biosensor based on an amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) with embedded resistive switching memories (ReRAMs). The sensor comprises a control gat...
A highly reliable reverse-trapezoid-structured polydimethylsiloxane (PDMS) is demonstrated to achieve mechanically enhanced amorphous indium-gallium-zinc oxide (a-IGZO) thin-film-transistors (TFTs) for skin-compatible electronics. Finite element anal...
Conventional sol-gel solutions have received significant attention in thin-film transistor (TFT) manufacturing because of their advantages such as simple processing, large-scale applicability, and low cost. However, conventional sol-gel processed zin...
In this study, we propose tunable pH sensors based on the electric-double-layer transistor (EDLT) with time-dependent sensitivity characteristics. The EDLT is able to modulate the drain current by using the mobile ions inside the electrolytic gate di...
We focused on the importance of solvent evaporation governed by the temperature of the pre-annealing stage (TS) in solution-processed zinc tin oxide (ZTO) thin-film transistors (TFTs). We controlled TS based on the boiling point (BP) of the solvent u...
The synthesis and electrocatalytic properties of amorphous first- and third-row transition metal sulfides (a-TMS) for green hydrogen generation have been comprehensively reviewed. These electrocatalysts can be prepared by several solution processes,...
We report on investigating the structural and electronic properties of semiconducting and insulating layers produced in a process resembling percolation in a unique cold plasma fabrication method (plasma-enhanced chemical vapor deposition—PECVD). Amo...
As the pioneer semiconductor in transistor, germanium (Ge) has been widely applied in information technology for over half a century. Although many phase transitions in Ge have been reported, the complicated phenomena of the phase structures in amorp...
The authors present results on the performance of a hybrid external cavity photonic crystal laser-comprising semiconductor optical amplifier, and a 2D photonic crystal cavity fabricated in low-temperature amorphous silicon. The authors demonstrate th...
In recent years, the charge carrier mobility study of organic semiconductors has seen significant progress and surpassed that of amorphous silicon thanks to the development of various molecular engineering, solution processing, and external alignment...
The development of novel, noble metal-free semiconductor catalysts with high efficiency is of great importance for the degradation of organic compounds. Among them, amorphous materials have been extensively studied for their unique and commercially u...
In this study, a combination of theoretical calculations and experiments were carried out to analyze boron phosphide materials. Amorphous boron powder and amorphous red phosphorus were used as raw materials to directly synthesize the target samples i...
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