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Open AccessArticle

Tailoring IGZO Composition for Enhanced Fully Solution-Based Thin Film Transistors

i3N/CENIMAT, Department of Materials Science, Faculty of Science and Technology, Universidade NOVA de Lisboa and CEMOP/UNINOVA, Campus de Caparica, 2829-516 Caparica, Portugal
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Nanomaterials 2019, 9(9), 1273; https://doi.org/10.3390/nano9091273
Received: 4 August 2019 / Revised: 31 August 2019 / Accepted: 3 September 2019 / Published: 6 September 2019
Solution-processed metal oxides have been investigated as an alternative to vacuum-based oxides to implement low-cost, high-performance electronic devices on flexible transparent substrates. However, their electrical properties need to be enhanced to apply at industrial scale. Amorphous indium-gallium-zinc oxide (a-IGZO) is the most-used transparent semiconductor metal oxide as an active channel layer in thin-film transistors (TFTs), due to its superior electrical properties. The present work evaluates the influence of composition, thickness and ageing on the electrical properties of solution a-IGZO TFTs, using solution combustion synthesis method, with urea as fuel. After optimizing the semiconductor properties, low-voltage TFTs were obtained by implementing a back-surface passivated 3-layer In:Ga:Zn 3:1:1 with a solution-processed high-к dielectric; AlOx. The devices show saturation mobility of 3.2 cm2 V−1 s−1, IOn/IOff of 106, SS of 73 mV dec−1 and VOn of 0.18 V, thus demonstrating promising features for low-cost circuit applications. View Full-Text
Keywords: IGZO composition; solution combustion synthesis; transparent amorphous semiconductor oxides; low voltage operation IGZO composition; solution combustion synthesis; transparent amorphous semiconductor oxides; low voltage operation
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MDPI and ACS Style

Moreira, M.; Carlos, E.; Dias, C.; Deuermeier, J.; Pereira, M.; Barquinha, P.; Branquinho, R.; Martins, R.; Fortunato, E. Tailoring IGZO Composition for Enhanced Fully Solution-Based Thin Film Transistors. Nanomaterials 2019, 9, 1273.

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