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Open AccessArticle

Amorphous Oxide Thin Film Transistors with Nitrogen-Doped Hetero-Structure Channel Layers

Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
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Author to whom correspondence should be addressed.
Appl. Sci. 2017, 7(10), 1099; https://doi.org/10.3390/app7101099
Received: 7 September 2017 / Accepted: 17 October 2017 / Published: 24 October 2017
(This article belongs to the Special Issue Thin-Film Transistors)
The nitrogen-doped amorphous oxide semiconductor (AOS) thinfilm transistors (TFTs) with double-stacked channel layers (DSCL) were prepared and characterized. The DSCL structure was composed of nitrogen-doped amorphous InGaZnO and InZnO films (a-IGZO:N/a-IZO:N or a-IZO:N/a-IGZO:N) and gave the corresponding TFT devices large field-effect mobility due to the presence of double conduction channels. The a-IZO:N/a-IGZO:N TFTs, in particular, showed even better electrical performance (µFE = 15.0 cm2・V−1・s−1, SS = 0.5 V/dec, VTH = 1.5 V, ION/IOFF = 1.1 × 108) and stability (VTH shift of 1.5, −0.5 and −2.5 V for positive bias-stress, negative bias-stress, and thermal stress tests, respectively) than the a-IGZO:N/a-IZO:N TFTs. Based on the X-ray photoemission spectroscopy measurements and energy band analysis, we assumed that the optimized interface trap states, the less ambient gas adsorption, and the better suppression of oxygen vacancies in the a-IZO:N/a-IGZO:N hetero-structures might explain the better behavior of the corresponding TFTs. View Full-Text
Keywords: amorphous oxide semiconductor (AOS); thin film transistor (TFT); nitrogen-doped amorphous InGaZnO (a-IGZO:N); nitrogen-doped amorphous InZnO (a-IZO:N); hetero-structure amorphous oxide semiconductor (AOS); thin film transistor (TFT); nitrogen-doped amorphous InGaZnO (a-IGZO:N); nitrogen-doped amorphous InZnO (a-IZO:N); hetero-structure
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MDPI and ACS Style

Xie, H.; Liu, G.; Zhang, L.; Zhou, Y.; Dong, C. Amorphous Oxide Thin Film Transistors with Nitrogen-Doped Hetero-Structure Channel Layers. Appl. Sci. 2017, 7, 1099.

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