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Room Temperature Reactive Deposition of InGaZnO and ZnSnO Amorphous Oxide Semiconductors for Flexible Electronics

1
The Ångström Laboratory, Solid State Electronics, Uppsala University, Box 534, 751 21 Uppsala, Sweden
2
New Technologies Research Centre, University of West Bohemia, Univerzitní 8, 306 14 Pilsen, Czech Republic
3
Department of semiconductors, Institute of Physics of the Czech Academy of Sciences, Cukrovarnická 10, 162 00 Prague, Czech Republic
*
Author to whom correspondence should be addressed.
Coatings 2020, 10(1), 2; https://doi.org/10.3390/coatings10010002
Received: 26 November 2019 / Revised: 10 December 2019 / Accepted: 12 December 2019 / Published: 18 December 2019
Amorphous oxide semiconductors (AOSs) are interesting materials which combine optical transparency with high electron mobility. AOSs can be prepared at low temperatures by high throughput deposition techniques such as magnetron sputtering and are thus suitable for flexible transparent electronics such as flexible displays, thin-film transistors, and sensors. In magnetron sputtering the energy input into the growing film can be controlled by the plasma conditions instead of the substrate temperature. Here, we report on magnetron sputtering of InGaZnO (IGZO) and ZnSnO (ZTO) with a focus on the effect of deposition conditions on the film properties. IGZO films were deposited by radio-frequency (RF) sputtering from an oxide target while for ZTO, reactive sputtering from an alloy target was used. All films were deposited without substrate heating and characterized with respect to microstructure, electron mobility, and resistivity. The best as-deposited IGZO films exhibited a resistivity of about 2 × 10−2 Ohm∙cm and an electron mobility of 18 cm2∙V−1∙s−1. The lateral distribution of the electrical properties in such films is mainly related to the activity and amount of oxygen reaching the substrate surface as well as its spatial distribution. The lateral uniformity is strongly influenced by the composition and energy of the material flux towards the substrate. View Full-Text
Keywords: amorphous oxide semiconductors; magnetron sputtering; InGaZnO; ZnSnO amorphous oxide semiconductors; magnetron sputtering; InGaZnO; ZnSnO
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MDPI and ACS Style

Prušáková, L.; Hubík, P.; Aijaz, A.; Nyberg, T.; Kubart, T. Room Temperature Reactive Deposition of InGaZnO and ZnSnO Amorphous Oxide Semiconductors for Flexible Electronics. Coatings 2020, 10, 2.

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