Next Article in Journal
Influence of Porous Spherical-Shaped Hydroxyapatite on Mechanical Strength and Bioactive Function of Conventional Glass Ionomer Cement
Next Article in Special Issue
Direct Inkjet Printing of Silver Source/Drain Electrodes on an Amorphous InGaZnO Layer for Thin-Film Transistors
Previous Article in Journal
Photovoltaic Performance Characterization of Textured Silicon Solar Cells Using Luminescent Down-Shifting Eu-Doped Phosphor Particles of Various Dimensions
Previous Article in Special Issue
Morphological Influence of Solution-Processed Zinc Oxide Films on Electrical Characteristics of Thin-Film Transistors
Open AccessArticle

Effect of Intrinsic Stress on Structural and Optical Properties of Amorphous Si-Doped SnO2 Thin-Film

Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China
State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Changchun 130033, China
Integrated System for Laser Applications Group, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China
Authors to whom correspondence should be addressed.
Academic Editor: Pedro Barquinha
Materials 2017, 10(1), 24;
Received: 13 September 2016 / Revised: 22 December 2016 / Accepted: 22 December 2016 / Published: 1 January 2017
(This article belongs to the Special Issue Oxide Semiconductor Thin-Film Transistor)
The effect of intrinsic stress on the structure and physical properties of silicon-tin-oxide (STO) films have been investigated. Since a state of tensile stress is available in as-deposited films, the value of stress can be exponentially enhanced when the annealing temperature is increased. The tensile stress is able to not only suppress the crystallization and widen the optical band gap of STO films, but also reduce defects of STO films. In this report, the good electrical performance of STO thin-film transistors (TFTs) can be obtained when annealing temperature is 450 °C. This includes a value of saturation mobility that can be reached at 6.7 cm2/Vs, a ratio of Ion/Ioff as 7.34 × 107, a steep sub-threshold swing at 0.625 V/decade, and a low trap density of 7.96 × 1011 eV−1·cm−2, respectively. View Full-Text
Keywords: intrinsic stress; Si-doped SnO2; amorphous oxide semiconductors intrinsic stress; Si-doped SnO2; amorphous oxide semiconductors
Show Figures

Graphical abstract

MDPI and ACS Style

Ning, H.; Liu, X.; Zhang, H.; Fang, Z.; Cai, W.; Chen, J.; Yao, R.; Xu, M.; Wang, L.; Lan, L.; Peng, J.; Wang, X.; Zhang, Z. Effect of Intrinsic Stress on Structural and Optical Properties of Amorphous Si-Doped SnO2 Thin-Film. Materials 2017, 10, 24.

Show more citation formats Show less citations formats
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Article Access Map by Country/Region

Back to TopTop