Gallium nitride (GaN)-based vertical power Schottky barrier diode (SBD) has demonstrated outstanding features in high-frequency and high-power applications. This paper reviews recent progress on GaN-based vertical power SBDs, including the following...
Shwachman–Diamond syndrome (SDS) represents one of the most common inherited bone marrow failure syndromes and is mainly caused by SBDS gene mutations. Only supportive treatments are available, with hematopoietic cell transplantation required w...
Gallium nitride (GaN) has attracted increased attention because of superior material properties, such as high electron saturation velocity and high electrical field strength, which are promising for high-power microwave applications. We report on a h...
The SiC MOSFET with an integrated SBD (SBD-MOSFET) exhibits excellent performance in power electronics. However, the static and dynamic characteristics of this device are influenced by a multitude of parameters, and traditional TCAD simulation method...
This study investigated several AlGaN/GaN Schottky Barrier Diodes (SBDs) with different designs to achieve device optimization. First, the optimal electrode spacing, etching depth, and field plate size of the devices were measured using Technology Co...
The optimization of mesa etch for a quasi-vertical gallium nitride (GaN) Schottky barrier diode (SBD) by inductively coupled plasma (ICP) etching was comprehensively investigated in this work, including selection of the etching mask, ICP power, radio...
The Shwachman–Diamond Syndrome (SDS) is an autosomal recessive disease whose majority of patients display mutations in a ribosome assembly protein named Shwachman–Bodian–Diamond Syndrome protein (SBDS). A specific therapy for treati...
The stress-induced 70 kDa heat shock protein (Hsp70) functions as a molecular chaperone to maintain protein homeostasis. Hsp70 contains an N-terminal ATPase domain (NBD) and a C-terminal substrate-binding domain (SBD). The SBD is divided into the β s...
Escherichia coli (E. coli) F17 is a member of enterotoxigenic Escherichia coli, which can cause massive diarrhea and high mortality in newborn lambs. β-defensin is mainly produced by the epithelial tissue of the gastrointestinal tract in respons...
A broad range of enzymes are used to modify starch for various applications. Here, a thermophilic 4-α-glucanotransferase from Thermoproteus uzoniensis (TuαGT) is engineered by N-terminal fusion of the starch binding domains (SBDs) of carb...
AlGaN/GaN Schottky barrier diodes (SBDs) with high Al composition and high temperature atomic layer deposition (ALD) Al2O3 layers were investigated. Current–voltage (I–V), X-ray photoelectron spectroscopy (XPS), atomic force microscope (A...
GaN-based terahertz (THz) Schottky barrier diodes (SBDs) are critical components for achieving high-power performance in THz frequency multipliers. However, the space applications of GaN-based THz SBDs are significantly constrained due to insufficien...
Diamond, renowned for its exceptional electrical, physical, and chemical properties, including ultra-wide bandgap, superior hardness, high thermal conductivity, and unparalleled stability, serves as an ideal candidate for next-generation high-power a...
Shwachman Diamond Syndrome (SDS) is a multi-system disease characterized by exocrine pancreatic insufficiency with malabsorption, infantile neutropenia and aplastic anemia. Life-threatening complications include progression to acute myeloid leukemia...
In this study, a dedicated dynamic measurement system was used to investigate the transient capacitance and recovery process of AlGaN/GaN lateral Schottky barrier diodes (SBDs). With the consideration of acceptor traps in the C-doped buffer, the C-V...
In this study, a novel silicon carbide (SiC) double-trench MOSFET (DT-MOS) combined Schottky barrier diode (SBD) and MOS-channel diode (MCD) is proposed and investigated using TCAD simulations. The integrated MCD helps inactivate the parasitic body d...
Introduction. Shwachman-Diamond Syndrome (SDS) is an autosomal-recessive disorder characterized by neutropenia, pancreatic exocrine insufficiency, skeletal dysplasia, and an increased risk for leukemic transformation. Biallelic mutations in the SBDS...
This work investigates the transient characteristics of an AlGaN/GaN lateral Schottky barrier diode (SBD) and its recovery process with a dedicated dynamic measurement system. Both static and dynamic characteristics were measured, analyzed with the c...
In this paper, the chemical vapor deposition (CVD) processing for 4H-SiC epilayer is investigated with particular emphasis on the defects and the noise properties. It is experimentally found that the process parameters of C/Si ratio strongly affect t...
In this work, the electrical properties of the Ga2O3 Schottky barrier diodes (SBDs) using W/Au as the Schottky metal were investigated. Due to the 450 °C post-anode annealing (PAA), the reduced oxygen vacancy defects on the β-Ga2O3 surface r...
β-Ga2O3 Schottky barrier diodes (SBDs) suffer from the electric field crowding and barrier height lowering effect, resulting in a low breakdown voltage (BV) and high reverse leakage current. Here, we developed β-Ga2O3 trench MOS-type Schott...
Diamond is known as the ultimate semiconductor material for electric devices with excellent properties such as an ultra-wide bandgap (5.47 eV), high carrier mobility (electron mobility 4000 cm2/V·s, hole mobility 3800 cm2/V·s), high cri...
The final maturation step of the 60S ribosomal subunit requires the release of eukaryotic translation initiation factor 6 (human eIF6, yeast Tif6) to enter the pool of mature ribosomes capable of engaging in translation. This process is mediated by t...
Short beak and dwarfism syndrome (SBDS), which was previously identified only in mule ducks, is now an emerging disease of Pekin ducks in China and Egypt. The disease is caused by the infection of ducks with a genetic variant of goose parvovirus&mdas...
Staphylococcus aureus (S. aureus) is a major bacterial infection in humans, leading to severe disease and causing death. The stagnation of antibiotic development in recent decades has made it difficult to combat drug-resistant infections. In this stu...
In this paper, the single-event burnout (SEB) and reinforcement structure of 1200 V SiC MOSFET (SG-SBD-MOSFET) with split gate and Schottky barrier diode (SBD) embedded were studied. The device structure was established using Sentaurus TCAD, and the...
Achieving low conduction loss and good channel mobility is crucial for SiC MOSFETs. However, basic planar SiC MOSFETs provide challenges due to their high density of interface traps and significant gate-to-drain capacitance. In order to enhance the r...
The Amyloid-β (Aβ)-derived, sphingolipid binding domain (SBD) peptide is a fluorescently tagged probe used to trace the diffusion behavior of sphingolipid-containing microdomains in cell membranes through binding to a constellation of glycosphingolip...
In the absence of traditional communication infrastructures, the choice of available technologies for building data collection and control systems in remote areas is very limited. This paper reviews and analyzes protocols and technologies for transfe...
This paper investigates the temperature-dependent effects of gamma-ray irradiation on β-Ga2O3 vertical Schottky barrier diodes (SBDs) under a 100 V reverse bias condition at a total dose of 1 Mrad(Si). As the irradiation dose increased, the radi...
The dynamism of proteins is central to their function, and several proteins have been described as flexible, as consisting of multiple domains joined by flexible linkers, and even as intrinsically disordered. Several techniques exist to study protein...
Schottky diode-based temperature sensors are the most common commercially available temperature sensors, and they are attracting increasing interest owing to their higher Schottky barrier height compared to their silicon counterparts. Therefore, this...
The design of a wide-band wide-beam circularly-polarized slot-coupled (WWCS) radiating element for wide-angle scanning arrays (WASAs) is addressed. The WWCS radiator exploits a simple geometry composed of a primary (driven) and a secondary (passive)...
This paper proposes a terminal matching network (TMN) technology, which can realize wideband matching of microwave rectifiers in a wide input power range. At the same time, it is proposed to realize ultra-wideband microwave rectifiers by connecting t...
This paper presents a preliminary investigation into the total dose effects and displacement damage effects on β-Ga2O3 Schottky barrier diodes (SBDs) induced by X-rays with an average energy of 8–20 keV and 1 MeV reactor neutrons. The elec...
Ribosome biogenesis is essential for protein synthesis, cell growth and survival. The process takes places in nucleoli and is orchestrated by various proteins, among them RNA polymerases I–III as well as ribosome biogenesis factors. Perturbatio...
Controlling the Schottky barrier height (ϕB) and other parameters of Schottky barrier diodes (SBD) is critical for many applications. In this work, the effect of inserting a graphene interfacial monolayer between a Ni Schottky metal and a β...
7 November 2021
Introduction: Sleep disorders, especially insomnia, are very common in different kinds of cancers, but their prevalence and incidence are not well-known. Disturbed sleep in cancer is caused by different reasons and usually appears as a comorbid disor...
Aim: Advancements in multimedia technology have facilitated the uploading and processing of videos with substantial content. Automated tools and techniques help to manage vast volumes of video content. Video shot segmentation is the basic symmetry st...
Detecting student behavior in smart classrooms is a critical area of research in educational technology that significantly enhances teaching quality and student engagement. This paper introduces an innovative approach using advanced computer vision a...
Frequency multipliers and mixers based on Schottky barrier diodes (SBDs) are widely used in terahertz (THz) imaging applications. However, they still face obstacles, such as poor performance consistency caused by discrete flip-chip diodes, as well as...
This article presents a novel hardware-assisted distributed ledger-based solution for simultaneous device and data security in smart healthcare. This article presents a novel architecture that integrates PUF, blockchain, and Tangle for Security-by-De...
System designers, analysts, and engineers use various techniques to develop complex systems. A traditional design approach, point-based design (PBD), uses system decomposition and modeling, simulation, optimization, and analysis to find and compare d...
In this review paper, an overview of the application of n-type 4H-SiC Schottky barrier diodes (SBDs) as radiation detectors is given. We have chosen 4H-SiC SBDs among other semiconductor devices such as PiN diodes or metal-oxide-semiconductor (MOS) s...
In this paper, an AlGaN/GaN Schottky barrier diode (SBD) with the T-anode located deep into the bottom buffer layer in combination with field plates (TAI-BBF FPs SBD) is proposed. The electrical characteristics of the proposed structure and the conve...
Schottky barrier diodes (SBD) are crucial in the electronics sector. The electronic properties of SBD are characterized by three basic electrical parameters as the ideality factor (n), barrier height (ΦSB) and series resistance (RS). These parame...
In this study, the design and fabrication of AZO/n-Si Schottky barrier diodes (SBDs) with hydrogen plasma treatment on silicon surface and AlxOx guard ring were presented. The Si surface exhibited less interface defects after the cleaning process fol...
There are more than 50 families of dendrimers, and some of which, such as polyamidoamine PAMAM, are well studied, and some are just starting to attract the attention of researchers. One promising type of dendrimers is sulfonimide-based dendrimers (SB...
The silicon carbide (SiC) Schottky diode (SBD) detector in a SiC hybrid photomultiplier tube (HPMT) generates signals by receiving photocathode electrons with an energy of 10 keV. So, the performance of the SiC SBD under electron irradiation with an...
A common barrier to achieving design intent is the absence of comprehensive information about operational performance during design development. This results in uninformed decision-making which impacts on actual building performance, in particular Wh...
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