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Optimization of Mesa Etch for a Quasi-Vertical GaN Schottky Barrier Diode (SBD) by Inductively Coupled Plasma (ICP) and Device Characteristics

1
Shenzhen Institute of Wide-Bandgap Semiconductors, Shenzhen 518000, China
2
Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
3
Department of Microelectronics, Delft University of Technology, 2628 CD Delft, The Netherlands
*
Authors to whom correspondence should be addressed.
Nanomaterials 2020, 10(4), 657; https://doi.org/10.3390/nano10040657
Received: 24 February 2020 / Revised: 19 March 2020 / Accepted: 29 March 2020 / Published: 1 April 2020
The optimization of mesa etch for a quasi-vertical gallium nitride (GaN) Schottky barrier diode (SBD) by inductively coupled plasma (ICP) etching was comprehensively investigated in this work, including selection of the etching mask, ICP power, radio frequency (RF) power, ratio of mixed gas, flow rate, and chamber pressure, etc. In particular, the microtrench at the bottom corner of the mesa sidewall was eliminated by a combination of ICP dry etching and tetramethylammonium hydroxide (TMAH) wet treatment. Finally, a highly anisotropic profile of the mesa sidewall was realized by using the optimized etch recipe, and a quasi-vertical GaN SBD was demonstrated, achieving a low reverse current density of 10−8 A/cm2 at −10 V. View Full-Text
Keywords: GaN; inductively coupled plasma (ICP); mesa; sidewall profile; quasi-vertical; Schottky barrier diode (SBD); dry etch GaN; inductively coupled plasma (ICP); mesa; sidewall profile; quasi-vertical; Schottky barrier diode (SBD); dry etch
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MDPI and ACS Style

Sun, Y.; Kang, X.; Zheng, Y.; Wei, K.; Li, P.; Wang, W.; Liu, X.; Zhang, G. Optimization of Mesa Etch for a Quasi-Vertical GaN Schottky Barrier Diode (SBD) by Inductively Coupled Plasma (ICP) and Device Characteristics. Nanomaterials 2020, 10, 657.

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