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Open AccessArticle

Effect of Various Defects on 4H-SiC Schottky Diode Performance and Its Relation to Epitaxial Growth Conditions

by Jinlan Li 1,2, Chenxu Meng 2, Le Yu 2, Yun Li 3, Feng Yan 2, Ping Han 2,* and Xiaoli Ji 2,*
1
College of Information Engineering, Yangzhou University, Yangzhou 225009, China
2
College of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
3
Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Electronic Devices Institute, Nanjing 210016, China
*
Authors to whom correspondence should be addressed.
Micromachines 2020, 11(6), 609; https://doi.org/10.3390/mi11060609
Received: 29 May 2020 / Revised: 18 June 2020 / Accepted: 22 June 2020 / Published: 24 June 2020
In this paper, the chemical vapor deposition (CVD) processing for 4H-SiC epilayer is investigated with particular emphasis on the defects and the noise properties. It is experimentally found that the process parameters of C/Si ratio strongly affect the surface roughness of epilayers and the density of triangular defects (TDs), while no direct correlation between the C/Si ratio and the deep level defect Z1/2 could be confirmed. By adjusting the C/Si ratio, a decrease of several orders of magnitudes in the noise level for the 4H-SiC Schottky barrier diodes (SBDs) could be achieved attributing to the improved epilayer quality with low TD density and low surface roughness. The work should provide a helpful clue for further improving the device performance of both the 4H-SiC SBDs and the Schottky barrier ultraviolet photodetectors fabricated on commercial 4H-SiC wafers. View Full-Text
Keywords: Ni/4H-SiC Schottky barrier diodes (SBDs); C/Si ratios; 1/f noise Ni/4H-SiC Schottky barrier diodes (SBDs); C/Si ratios; 1/f noise
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Li, J.; Meng, C.; Yu, L.; Li, Y.; Yan, F.; Han, P.; Ji, X. Effect of Various Defects on 4H-SiC Schottky Diode Performance and Its Relation to Epitaxial Growth Conditions. Micromachines 2020, 11, 609.

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