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Open AccessArticle

Electric Characteristic Enhancement of an AZO/Si Schottky Barrier Diode with Hydrogen Plasma Surface Treatment and AlxOx Guard Ring Structure

1
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, No. 1, University Road, Tainan 701, Taiwan
2
Department of Chemical and Materials Engineering, National University of Kaohsiung, No. 700, Kaohsiung University Road, Nan-Tzu District, Kaohsiung 811, Taiwan
3
School of Information Engineering, Jimei University, Xiamen 361021, China
*
Authors to whom correspondence should be addressed.
Materials 2018, 11(1), 90; https://doi.org/10.3390/ma11010090
Received: 2 December 2017 / Revised: 4 January 2018 / Accepted: 4 January 2018 / Published: 8 January 2018
(This article belongs to the Special Issue Selected Papers from IEEE ICICE 2017)
In this study, the design and fabrication of AZO/n-Si Schottky barrier diodes (SBDs) with hydrogen plasma treatment on silicon surface and AlxOx guard ring were presented. The Si surface exhibited less interface defects after the cleaning process following with 30 w of H2 plasma treatment that improved the switching properties of the following formed SBDs. The rapid thermal annealing experiment also held at 400 °C to enhance the breakdown voltage of SBDs. The edge effect of the SBDs was also suppressed with the AlxOx guard ring structure deposited by the atomic layer deposition (ALD) at the side of the SBDs. Experimental results show that the reverse leakage current was reduced and the breakdown voltage increased with an addition of the AlxOx guard ring. The diode and fabrication technology developed in the study were applicable to the realization of SBDs with a high breakdown voltage (>200 V), a low reverse leakage current density (≤72 μA/mm2@100 V), and a Schottky barrier height of 1.074 eV. View Full-Text
Keywords: Schottky barrier diodes; hydrogen plasma; guard ring; atomic layer deposition; rapid thermal annealing Schottky barrier diodes; hydrogen plasma; guard ring; atomic layer deposition; rapid thermal annealing
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MDPI and ACS Style

Li, C.-Y.; Cheng, M.-Y.; Houng, M.-P.; Yang, C.-F.; Liu, J. Electric Characteristic Enhancement of an AZO/Si Schottky Barrier Diode with Hydrogen Plasma Surface Treatment and AlxOx Guard Ring Structure. Materials 2018, 11, 90.

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