Wide-bandgap semiconductor betavoltaic batteries have a promising prospect in Micro-Electro-Mechanical Systems for high power density and long working life, but their material selection is still controversial. Specifically, the silicon carbide (SiC)...
Wide-bandgap (WBG) material-based switching devices such as gallium nitride (GaN) high electron mobility transistors (HEMTs) and silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) are considered very promising candidat...
Wide-bandgap semiconductors have been envisioned for power electronics applications because of their ability to operate at higher temperatures and higher applied voltages without breakdown. However, the presence of defects may cause device failure, n...
This study presents a decision-support methodology to design and optimize modular Boost converters in the context of fuel-cell electric vehicles. It involves the utilization of interleaved techniques to reduce fuel-cell current ripple, enhance system...
In this paper, an overview of wide-bandgap (WBG) semiconductors for radiation detection applications is given. The recent advancements in the fabrication of high-quality wafers have enabled remarkable WBG semiconductor device applications. The most c...
The role of crystal defects in wide bandgap semiconductors and dielectrics under extreme environments (high temperature, high electric and magnetic fields, intense radiation, and mechanical stresses) found in power electronics is reviewed. Understand...
Ultraviolet (UV) detectors have attracted considerable attention in the past decade due to their extensive applications in the civil and military fields. Wide bandgap semiconductor-based UV detectors can detect UV light effectively, and nanowire stru...
The world is currently experiencing major advancement in the electrification of both the industrial and commercial sectors. This is part of an effort to reduce reliance on combustible fuels, reduce emissions, integrate renewable energy systems and in...
The study began by pre-sintering Ga2O3 powder at 950 °C for 1 h, followed by the preparation of a mixture of Ga2O3 and 12 at% NiO powders to fabricate a source target material. An electron beam (e-beam) system was then used to deposit NiO-doped G...
Silicon (Si)-based semiconductor devices have long dominated the power electronics industry and are used in almost every application involving power conversion. Examples of these include metal-oxide-semiconductor field-effect transistors (MOSFETs), i...
The Ga-doped Mg0.2Zn0.8O (GMZO) transparent semiconductor thin films were prepared using the sol-gel and spin-coating deposition technique. Changes in the microstructural features, optical parameters, and electrical characteristics of sol-gel-synthes...
The fabrication process of vacuum ultraviolet (VUV) detectors based on traditional semiconductor materials is complex and costly. The new generation of wide-bandgap semiconductor materials greatly reduce the fabrication cost of the entire VUV detecto...
Wide-bandgap semiconductors like GaN, known for their superior photoresponse and detection capabilities in the ultraviolet range, represent a foundational component in the design of advanced photodetectors, where the integration of materials with dis...
Two-dimensional (2D) piezoelectric semiconductor materials are garnering significant attention in applications such as intelligent sensing and energy harvesting due to their exceptional physical and chemical properties. Among these, molybdenum disulf...
Organic ultraviolet (UV) phototransistors are promising for diverse applications. However, wide-bandgap organic semiconductors (OSCs) with intense UV absorption tend to exhibit large contact resistance (Rc) because of an energy-level mismatch with me...
These days, the demand on electronic systems operating at high temperature is increasing owing to bursting interest in applications adaptable to harsh environments on earth, as well as in the unpaved spaces in the universe. However, research on memor...
Gallium Nitride and Related Wide-Bandgap Semiconductors (WBS) have constantly received a great amount of attention in recent years [...]
Hexagonal boron nitride (h-BN), a wide-bandgap semiconductor with excellent thermal stability, high electrical resistivity, and strong neutron absorption capacity, has attracted growing interest in the field of solid-state neutron detection. This rev...
Electrically driven light sources are essential in a wide range of applications, from indication and display technologies to high-speed data communication and quantum information processing. Wide-bandgap semiconductors promise to advance solid-state...
Hard-switching losses in three-level T-type (3LTT) bridge-legs cannot be directly estimated from datasheet energy loss curves, which are given for symmetric two-level half-bridge configurations only. The commutations in a 3LTT bridge-leg occur betwee...
Orthorhombic κ-Ga2O3 thin films were grown for the first time on polycrystalline diamond free-standing substrates by metal-organic vapor phase epitaxy at a temperature of 650 °C. Structural, morphological, electrical, and photoelectronic pr...
Wide-bandgap (WBG) semiconductor devices are making their way into large-volume applications, including pivotal domains of societal infrastructure such as sustainable energy generation and conversion. Presented for a long time mainly as a synonym of...
While impressive progress has been already achieved in wide-bandgap (WBG) semiconductors such as 4H-SiC and GaN technologies, the lack of intelligent methodologies to control the gate drivers has prevented exploitation of the maximum potential of sem...
Semiconductor nanomaterials have emerged as a significant factor in the advancement of tumor immunotherapy. This review discusses the potential of transition metal oxide (TMO) nanomaterials in the realm of anti-tumor immune modulation. These binary i...
This paper exploits an effective approach to overcome the breakdown limitations of traditional galvanic isolators based on chip-scale isolation barriers, thus achieving a very high isolation rating (i.e., compliant with the reinforced isolation requi...
With the aim of presenting the processes governing the Laser-Induced Periodic Surface Structures (LIPSS), its main theoretical models have been reported. More emphasis is given to those suitable for clarifying the experimental structures observed on...
The exponential growth of artificial intelligence (AI), electrified transport, and renewable generation is accelerating a structural shift in how societies produce, deliver, and consume electricity. We argue that the next frontier is not incremental...
This article presents a new modulation technique called three-dimensional sigma–delta (3D-ΣΔ) modulation for high-frequency three-leg four-wire voltage source converters (VSCs) that use wide-bandgap (WBG) semiconductors. These WBG d...
Nitride wide-bandgap semiconductors possess a wide tunable energy bandgap and abundant coordination anionic groups. This suggests their potential to display nonlinear optical (NLO) properties in the UV wavelength spectrum. This paper reports recent p...
This paper presents a comparative evaluation of wide-bandgap power semiconductor devices for domestic induction heating application, which is currently a serious alternative to traditional heating techniques. In the induction heating system, the powe...
Power electronics are becoming increasingly more important, as electrical energy constitutes 40% of the total primary energy usage in the USA and is expected to grow rapidly with the emergence of electric vehicles, renewable energy generation, and en...
Constructing two-dimensional (2D) novel materials using superatoms as building blocks is currently a highly promising research field. In this study, by employing an oxidation strategy and based on first-principles calculations, we successfully predic...
This Special Issue on “Nano/Micro and Bio-Inspired Materials on Wide-Bandgap-Semiconductor-Based Optoelectronic/Power Devices” is a collection of 20 original articles dedicated to theoretical and experimental research works providing new...
Increasing the photocatalytic efficiency of earth-abundant wide-bandgap semiconductors is of high interest for the development of cheap but effective light-driven chemical conversion processes. In this study, the coupling of ZnO and TiO2 with low con...
Currently, a significant portion (~50%) of global warming emissions, such as CO2, are related to energy production and transportation. As most energy usage will be electrical (as well as transportation), the efficient management of electrical power i...
The wide-bandgap (WBG) semiconductor devices for modern power electronics require intensive efforts for the analysis of the critical aspects of their operation. In recent years, silicon carbide (SiC) based field effect transistor have been extensivel...
Gallium nitride (GaN) has emerged as one of the most promising wide-bandgap semiconductors for next-generation space photovoltaics. In contrast to conventional III–V compounds such as GaAs and InP, which are highly efficient under terrestrial c...
In order to efficiently facilitate various research works related to power converter design and testing for solar photovoltaic (PV) generation systems, it is a great merit to use advanced power-converter-based and digitally controlled PV emulators in...
This article provides a comprehensive review of wide and ultrawide bandgap power electronic semiconductor devices, comparing silicon (Si), silicon carbide (SiC), gallium nitride (GaN), and the emerging device diamond technology. Key parameters examin...
In this work, efforts were made to prepare a thermostable die-attach structure which includes stable sintered microporous Ag and multi-layer surface metallization. Silicon carbide particles (SiCp) were added into the Ag sinter joining paste to improv...
The high breakdown electric field, n-type doping capability, availability of high-quality substrates, and high Baliga’s figure of merit of Ga2O3 demonstrate its potential as a next-generation power semiconductor material. However, the thermal c...
This paper introduces a mathematical design and analysis of three-phase inverters used in electric drive applications such as aerospace, electric vehicles, and pumping applications. Different wide bandgap (WBG) semiconductor technologies are consider...
Wide-Bandgap (WBG) semiconductors—silicon carbide (SiC) and gallium nitride (GaN)— enable high-power-density conversion, but performance is limited by where heat is generated and how it is removed. This review links device-level loss mech...
This report systematically investigates the influence of different carrier gases (O2, N2, and air) on the growth of gallium oxide (Ga2O3) thin films on c-plane sapphire substrates by using the mist-CVD method. Although XRD and Raman measurements show...
In this work, the radiation response of bulk GaN and Ga2O3 materials exposed to ground-level neutrons is studied by Geant4 numerical simulation, considering the whole atmospheric neutron spectrum at sea level, from thermal to high energies (GeV). The...
With power demands continuously growing, the penetration of renewable energy resources, particularly solar photovoltaic (PV) systems, across the residential sector has been extensive. A voltage source inverter (VSI) is the key element for efficiently...
Wide bandgap (WBG) power semiconductors can achieve high efficiency and power density due to their low on-resistance and fast switching speeds. However, the fast-switching speed induces voltage to the parasitic inductance in the circuit, causing a si...
Induction motor (IM) drives are considered one of the important technologies in modern industry. Several industrial applications, such as material handling and food and beverage applications, are driven and operated by modern AC drives. Moreover, mod...
An up-to-date review on recent results for self-trapping of free electrons and holes, as well as excitons, in strontium titanate (STO), which gives rise to small polarons and self-trapped excitons (STEs) is presented. Special attention is paid to the...
A novel structure scheme by transposing the gate channel orientation from a long horizontal one to a short vertical one is proposed and verified by technology computer-aided design (TCAD) simulations to achieve GaN-based normally-off high electron mo...
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