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Perspective

LIPSS Applied to Wide Bandgap Semiconductors and Dielectrics: Assessment and Future Perspectives

1
ISM-CNR, DiaTHEMA Laboratory, U.O.S. Montelibretti, Via Salaria km 29.300, 00015 Monterotondo, Italy
2
ISM-CNR, FemtoLAB, U.O.S. Tito Scalo, Zona Industriale, 85050 Potenza, Italy
3
Dipartimento di Scienze, Università della Basilicata, Viale dell’Ateneo Lucano 10, 85100 Potenza, Italy
4
Dipartimento di Scienze e Tecnologie Chimiche, Università di Roma ‘Tor Vergata’, 00133 Rome, Italy
*
Author to whom correspondence should be addressed.
Materials 2022, 15(4), 1378; https://doi.org/10.3390/ma15041378
Submission received: 30 December 2021 / Revised: 4 February 2022 / Accepted: 9 February 2022 / Published: 13 February 2022
(This article belongs to the Special Issue New Advances in Low-Dimensional Materials and Nanostructures)

Abstract

With the aim of presenting the processes governing the Laser-Induced Periodic Surface Structures (LIPSS), its main theoretical models have been reported. More emphasis is given to those suitable for clarifying the experimental structures observed on the surface of wide bandgap semiconductors (WBS) and dielectric materials. The role played by radiation surface electromagnetic waves as well as Surface Plasmon Polaritons in determining both Low and High Spatial Frequency LIPSS is briefly discussed, together with some experimental evidence. Non-conventional techniques for LIPSS formation are concisely introduced to point out the high technical possibility of enhancing the homogeneity of surface structures as well as tuning the electronic properties driven by point defects induced in WBS. Among these, double- or multiple-fs-pulse irradiations are shown to be suitable for providing further insight into the LIPSS process together with fine control on the formed surface structures. Modifications occurring by LIPSS on surfaces of WBS and dielectrics display high potentialities for their cross-cutting technological features and wide applications in which the main surface and electronic properties can be engineered. By these assessments, the employment of such nanostructured materials in innovative devices could be envisaged.
Keywords: LIPSS; wide bandgap semiconductors; dielectrics; surface nanostructuring; LSFL; HSFL; SSPs LIPSS; wide bandgap semiconductors; dielectrics; surface nanostructuring; LSFL; HSFL; SSPs

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MDPI and ACS Style

Mastellone, M.; Pace, M.L.; Curcio, M.; Caggiano, N.; De Bonis, A.; Teghil, R.; Dolce, P.; Mollica, D.; Orlando, S.; Santagata, A.; et al. LIPSS Applied to Wide Bandgap Semiconductors and Dielectrics: Assessment and Future Perspectives. Materials 2022, 15, 1378. https://doi.org/10.3390/ma15041378

AMA Style

Mastellone M, Pace ML, Curcio M, Caggiano N, De Bonis A, Teghil R, Dolce P, Mollica D, Orlando S, Santagata A, et al. LIPSS Applied to Wide Bandgap Semiconductors and Dielectrics: Assessment and Future Perspectives. Materials. 2022; 15(4):1378. https://doi.org/10.3390/ma15041378

Chicago/Turabian Style

Mastellone, Matteo, Maria Lucia Pace, Mariangela Curcio, Nicola Caggiano, Angela De Bonis, Roberto Teghil, Patrizia Dolce, Donato Mollica, Stefano Orlando, Antonio Santagata, and et al. 2022. "LIPSS Applied to Wide Bandgap Semiconductors and Dielectrics: Assessment and Future Perspectives" Materials 15, no. 4: 1378. https://doi.org/10.3390/ma15041378

APA Style

Mastellone, M., Pace, M. L., Curcio, M., Caggiano, N., De Bonis, A., Teghil, R., Dolce, P., Mollica, D., Orlando, S., Santagata, A., Serpente, V., Bellucci, A., Girolami, M., Polini, R., & Trucchi, D. M. (2022). LIPSS Applied to Wide Bandgap Semiconductors and Dielectrics: Assessment and Future Perspectives. Materials, 15(4), 1378. https://doi.org/10.3390/ma15041378

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