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Article

Superinjection of Holes in Homojunction Diodes Based on Wide-Bandgap Semiconductors

Laboratory of Nanooptics and Plasmonics, Moscow Institute of Physics and Technology, Dolgoprudny 141700, Russia
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Materials 2019, 12(12), 1972; https://doi.org/10.3390/ma12121972
Received: 20 April 2019 / Revised: 11 June 2019 / Accepted: 17 June 2019 / Published: 19 June 2019
(This article belongs to the Special Issue Advanced Materials and Devices in Solid State Lighting)
Electrically driven light sources are essential in a wide range of applications, from indication and display technologies to high-speed data communication and quantum information processing. Wide-bandgap semiconductors promise to advance solid-state lighting by delivering novel light sources. However, electrical pumping of these devices is still a challenging problem. Many wide-bandgap semiconductor materials, such as SiC, GaN, AlN, ZnS, and Ga2O3, can be easily n-type doped, but their efficient p-type doping is extremely difficult. The lack of holes due to the high activation energy of acceptors greatly limits the performance and practical applicability of wide-bandgap semiconductor devices. Here, we study a novel effect which allows homojunction semiconductor devices, such as p-i-n diodes, to operate well above the limit imposed by doping of the p-type material. Using a rigorous numerical approach, we show that the density of injected holes can exceed the density of holes in the p-type injection layer by up to four orders of magnitude depending on the semiconductor material, dopant, and temperature, which gives the possibility to significantly overcome the doping problem. We present a clear physical explanation of this unexpected feature of wide-bandgap semiconductor p-i-n diodes and closely examine it in 4H-SiC, 3C-SiC, AlN, and ZnS structures. The predicted effect can be exploited to develop bright-light-emitting devices, especially electrically driven nonclassical light sources based on color centers in SiC, AlN, ZnO, and other wide-bandgap semiconductors. View Full-Text
Keywords: superinjection in homojunction diodes; silicon carbide; zinc sulfide; aluminum nitride; light-emitting diodes; single-photon sources superinjection in homojunction diodes; silicon carbide; zinc sulfide; aluminum nitride; light-emitting diodes; single-photon sources
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MDPI and ACS Style

Khramtsov, I.A.; Fedyanin, D.Y. Superinjection of Holes in Homojunction Diodes Based on Wide-Bandgap Semiconductors. Materials 2019, 12, 1972. https://doi.org/10.3390/ma12121972

AMA Style

Khramtsov IA, Fedyanin DY. Superinjection of Holes in Homojunction Diodes Based on Wide-Bandgap Semiconductors. Materials. 2019; 12(12):1972. https://doi.org/10.3390/ma12121972

Chicago/Turabian Style

Khramtsov, Igor A., and Dmitry Y. Fedyanin 2019. "Superinjection of Holes in Homojunction Diodes Based on Wide-Bandgap Semiconductors" Materials 12, no. 12: 1972. https://doi.org/10.3390/ma12121972

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