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Open AccessArticle

Superinjection of Holes in Homojunction Diodes Based on Wide-Bandgap Semiconductors

Laboratory of Nanooptics and Plasmonics, Moscow Institute of Physics and Technology, Dolgoprudny 141700, Russia
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Materials 2019, 12(12), 1972; https://doi.org/10.3390/ma12121972
Received: 20 April 2019 / Revised: 11 June 2019 / Accepted: 17 June 2019 / Published: 19 June 2019
(This article belongs to the Special Issue Advanced Materials and Devices in Solid State Lighting)
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Abstract

Electrically driven light sources are essential in a wide range of applications, from indication and display technologies to high-speed data communication and quantum information processing. Wide-bandgap semiconductors promise to advance solid-state lighting by delivering novel light sources. However, electrical pumping of these devices is still a challenging problem. Many wide-bandgap semiconductor materials, such as SiC, GaN, AlN, ZnS, and Ga2O3, can be easily n-type doped, but their efficient p-type doping is extremely difficult. The lack of holes due to the high activation energy of acceptors greatly limits the performance and practical applicability of wide-bandgap semiconductor devices. Here, we study a novel effect which allows homojunction semiconductor devices, such as p-i-n diodes, to operate well above the limit imposed by doping of the p-type material. Using a rigorous numerical approach, we show that the density of injected holes can exceed the density of holes in the p-type injection layer by up to four orders of magnitude depending on the semiconductor material, dopant, and temperature, which gives the possibility to significantly overcome the doping problem. We present a clear physical explanation of this unexpected feature of wide-bandgap semiconductor p-i-n diodes and closely examine it in 4H-SiC, 3C-SiC, AlN, and ZnS structures. The predicted effect can be exploited to develop bright-light-emitting devices, especially electrically driven nonclassical light sources based on color centers in SiC, AlN, ZnO, and other wide-bandgap semiconductors. View Full-Text
Keywords: superinjection in homojunction diodes; silicon carbide; zinc sulfide; aluminum nitride; light-emitting diodes; single-photon sources superinjection in homojunction diodes; silicon carbide; zinc sulfide; aluminum nitride; light-emitting diodes; single-photon sources
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).

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Khramtsov, I.A.; Fedyanin, D.Y. Superinjection of Holes in Homojunction Diodes Based on Wide-Bandgap Semiconductors. Materials 2019, 12, 1972.

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