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Open AccessArticle

Influence of Carrier Gases on the Quality of Epitaxial Corundum-Structured α-Ga2O3 Films Grown by Mist Chemical Vapor Deposition Method

Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University, Xi’an 710071, China
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Materials 2019, 12(22), 3670; https://doi.org/10.3390/ma12223670
Received: 22 August 2019 / Revised: 31 October 2019 / Accepted: 4 November 2019 / Published: 7 November 2019
(This article belongs to the Special Issue Metal Oxide Thin Film: Synthesis, Characterization and Application)
This report systematically investigates the influence of different carrier gases (O2, N2, and air) on the growth of gallium oxide (Ga2O3) thin films on c-plane sapphire substrates by using the mist-CVD method. Although XRD and Raman measurements show that the pure corundum-structured α-Ga2O3 with single (0006) plane orientation was successfully obtained for all three different carrier gases, the crystal quality could be greatly affected by the carrier gas. When O2 is used as the carrier gas, the smallest full-width at half maximum (FWHM), the very sharp absorption cutoff edge, the perfect lattice structure, the highest growth rate, and the smooth surface can be obtained for the epitaxial α-Ga2O3 film as demonstrated by XRD, UV-VIS, TEM, AFM (Atomic Force Microscope), and SEM measurements. It is proposed that the oxygen content in carrier gas should be responsible for all of these results. XPS (X-ray photoelectron spectroscopy) analysis also confirms that more oxygen elements can be included in epitaxial film when O2 is used as the carrier gas and thus help improve the crystal quality. The proper carrier gas is essential for the high quality α-Ga2O3 growth. View Full-Text
Keywords: wide-bandgap semiconductor; α-Ga2O3; mist chemical vapor deposition (mist-CVD); carrier gas; transparent semiconductor wide-bandgap semiconductor; α-Ga2O3; mist chemical vapor deposition (mist-CVD); carrier gas; transparent semiconductor
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MDPI and ACS Style

Xu, Y.; Zhang, C.; Cheng, Y.; Li, Z.; Cheng, Y.; Feng, Q.; Chen, D.; Zhang, J.; Hao, Y. Influence of Carrier Gases on the Quality of Epitaxial Corundum-Structured α-Ga2O3 Films Grown by Mist Chemical Vapor Deposition Method. Materials 2019, 12, 3670.

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