- Article
Optoelectronic Properties of In0.87Ga0.13As0.25P0.75(001)β2(2×4) Surface: A First-Principles Study
- Yong Wang,
- Jianxin Li,
- Junju Zhang and
- Weiwei Sha
InGaAsP photocathode surface affects the absorption, transport and escape of photons, and has a great influence on quantum efficiency. In order to study InGaAsP photocathode surface, the electronic structure, work function, formation energy, Mulliken...