Photodiode is one of the key components in optoelectronic technology, which is used to convert optical signal into electrical ones in modern communication systems. In this paper, an avalanche photodiode (APD) is designed and fulfilled, which is compa...
Process and device simulation of a surface acoustics wave (SAW) temperature sensor based AlN material as piezoelectric film, grown on Si wafer and patterned with Al electrodes, is described. CMOS 1 µm process is the process used to simulate a S...
Owing to their two-dimensional confinements, silicon nanowires display remarkable optical, magnetic, and electronic properties. Of special interest has been the development of advanced biosensing approaches based on the field effect associated with s...
The complementary metal oxide semiconductor (CMOS) microbolometer technology provides a low-cost approach for the long-wave infrared (LWIR) imaging applications. The fabrication of the CMOS-compatible microbolometer infrared focal plane arrays (IRFPA...
Erbium (
We use the 180 nm GLOBALFOUNDRIES (GF) BCDLite CMOS process for the production of a silicon photomultiplier prototype. We study the main characteristics of the developed sensor in comparison with commercial SiPMs obtained in custom technologies and o...
This paper presents the integration of an inductor by complementary metal-oxide-semiconductor (CMOS) compatible processes for integrated smart microsensorsystems that have been developed to monitor the motion and vital signs of humans invarious envir...
The recent development of the Internet of Things (IoT) in healthcare and indoor air quality monitoring expands the market for miniaturized gas sensors. Metal oxide gas sensors based on microhotplates fabricated with micro-electro-mechanical system (M...
This work presents the design and characterization of a resonant CMOS-MEMS pressure sensor manufactured in a standard 180 nm CMOS industry-compatible technology. The device consists of aluminum square plates attached together by means of tungsten via...
We present new developments of CMOS compatible direct conversion terahertz detector operating at room temperature. The rectenna consists of an integrated antenna, realized on the surface of the integrated circuit and connected to a nanometric metalli...
The last years showed an increased request for miniaturised, CMOS-compatible gas detectors. In contrast to sensors utilizing metal-oxide chemical interfaces, optical strategies are potentially faster and more robust. Recently we demonstrated CO2 dete...
The compatibility of memristor materials with advanced complementary metal-oxide-semiconductor (CMOS) technology is a key factor for microelectronics element base manufacturing. Therefore, we continued studying previously fabricated CMOS-compatible N...
The historical bottleneck for truly high scale integrated photonics is the light emitter. The lack of monolithically integrable light sources increases costs and reduces scalability. Quantum phenomena found in embedded Si particles in the nanometer s...
Vertical Hall sensors (VHSs), compatible with complementary metal oxide semiconductor (CMOS) technology, are used to detect magnetic fields in the plane of the sensor. In previous studies, their performance was limited by a large offset. This paper r...
The growing demand for intelligent environmental monitoring is driving the advancement of high-performance, low-cost, and highly integrated gas sensors. Silicon-compatible semiconductor gas sensors provide a promising platform to achieve this goal by...
During the last few decades, the microelectronics industry has actively been investigating the potential for the functional integration of semiconductor-based devices beyond digital logic and memory, which includes RF and analog circuits, biochips, a...
Considering the isotropic release process of nanoelectromechanical systems (NEMSs), defining the active region of NEM memory switches is one of the most challenging process technologies for the implementation of monolithic-three-dimensional (M3D) CMO...
The surge in demand for 3D MOSFETs, such as FinFETs, driven by recent technological advances, is explored in this review. FinFETs, positioned as promising alternatives to bulk CMOS, exhibit favorable electrostatic characteristics and offer power/perf...
Electrical double-layer (EDL) synaptic transistors based on organic materials exhibit low thermal and chemical stability and are thus incompatible with complementary metal oxide semiconductor (CMOS) processes involving high-temperature operations. Th...
Atomic magnetometers (AMs) are widely acknowledged as one of the most sensitive kind of instruments for bio-magnetic field measurement. Recently, there has been growing interest in developing chip-scale AMs through nanophotonics and current CMOS-comp...
This paper reports a versatile nano-sensor technology using “top-down” poly-silicon nanowire field-effect transistors (FETs) in the conventional Complementary Metal-Oxide Semiconductor (CMOS)-compatible semiconductor process. The nanowire manufacturi...
We present the numerical proof of a new sensor concept, based on the Resistive AC-Coupled Silicon Detectors (RSDs) paradigm and standard CMOS process, which benefits from having a 100% fill factor and embedded front-end electronics. The compatibility...
In this work, we present a novel pH sensor using efficient laterally coupled structure enabled by Complementary Metal-Oxide Semiconductor (CMOS) Fin Field-Effect Transistor (FinFET) processes. This new sensor features adjustable sensitivity, wide sen...
Recent years have witnessed a growing interest in detectors capable of detecting single photons in the near-infrared (NIR), mainly due to the emergence of new applications such as light detection and ranging (LiDAR) for, e.g., autonomous driving. A s...
Guided-wave optical biosensors are reviewed in this paper. Advantages related to optical technologies are presented and integrated architectures are investigated in detail. Main classes of bio receptors and the most attractive optical transduction me...
The monolithic integration of III-V semiconductors with silicon (Si) is a critical step toward advancing optoelectronic and photonic devices. In this work, we present GaAs nanoheteroepitaxy (NHE) on Si nanotips using gas-source molecular beam epitaxy...
This paper summarizes the results of investigations of bipolar transistors made in VESTIC (Vertical Slit Transistor-based Integrated Circuits) technology. This technology was proposed by W. Maly as an alternative to classical bulk CMOS technology. Ho...
This paper presents a novel parallel quasi-cyclic low-density parity-check (QC-LDPC) encoding algorithm with low complexity, which is compatible with the 5th generation (5G) new radio (NR). Basing on the algorithm, we propose a high area-efficient pa...
This paper reviews the state of emerging transistor technologies capable of terahertz amplification, as well as the state of transistor modeling as required in terahertz electronic circuit research. Commercial terahertz radar sensors of today are bei...
A compatible fabrication technology for integrating InGaAs nMOSFETs and Ge pMOSFETs is developed based on the development of the two-step gate oxide fabrication strategy. The direct wafer bonding method was utilized to obtain the InGaAs-Insulator-Ge...
Ion-sensitive, field-effect transistors (ISFET) have been useful biosensors in many applications. However, the signal-to-noise ratio of the ISFET is limited by its intrinsic, low-frequency noise. This paper presents an ISFET capable of utilizing late...
Hydrogenated amorphous silicon (a-Si:H) shows interesting optoelectronic and technological properties that make it suitable for the fabrication of passive and active micro-photonic devices, compatible moreover with standard microelectronic devices on...
Silicon oxide-based memristors have been extensively studied due to their compatibility with the dominant silicon complementary metal–oxide–semiconductor (CMOS) fabrication technology. However, the variability of resistance switching (RS)...
The acquisition of high-voltage signals from sensors and actuators in an internal-combustion engine is often required for diagnostic purposes or in the case of conversion to alternative fuels, such as hydrogen, natural gas, or biogas. The integration...
During the last few years, there has been renewed interest in the monolithic integration of gold-free, Ternary III–As Antimonide (III–As–Sb) compound semiconductor materials on complementary metal-oxide-semiconductor (CMOS)—co...
GaN has been widely used to develop devices for high-power and high-frequency applications owing to its higher breakdown voltage and high electron saturation velocity. The GaN HEMT radio frequency (RF) power amplifier is the first commercialized prod...
Microelectronics is emerging, sometimes with changing fortunes, as a key enabling technology in diagnostics. This paper reviews some recent results and technical challenges which still need to be addressed in terms of the design of CMOS analog applic...
In this paper, a buck DC-DC converter with the proposed twin frequency control scheme (TFCS) and accurate load current sensing (ALCS) was designed and implemented with 0.18 µm CMOS technology for a supply voltage ranging from 2.0 to 3.0 V, whic...
Titanium nitride (TiN) is one of the most well-established engineering materials nowadays. TiN can overcome most of the drawbacks of palsmonic metals due to its high electron conductivity and mobility, high melting point and due to the compatibility...
The current-mode logic (CML) driver has evolved alongside integrated circuit (IC) technology. Its typical structure contains a tail current source, differential amplifying transistors, and load resistors. It is widely used in modern optical transceiv...
Layered two-dimensional (2D) and quasi-zero-dimensional (0D) materials effectively absorb radiation in the wide ultraviolet, visible, infrared, and terahertz ranges. Photomemristive structures made of such low-dimensional materials are of great inter...
With the development of energy efficiency technologies such as 5G communication and electric vehicles, Si-based GaN microelectronics has entered a stage of rapid industrialization. As a new generation of microwave and millimeter wave devices, High El...
This research presents the optimization and proposal of P- and N-type 3-stacked Si0.8Ge0.2/Si strained super-lattice FinFETs (SL FinFET) using Low-Pressure Chemical Vapor Deposition (LPCVD) epitaxy. Three device structures, Si FinFET, Si0.8Ge0.2 FinF...
Germanium (Ge) has long been regarded as a promising channel material, owing to its superior carrier mobility and highly tunable electronic band structure. The new generation of low-power electronics is approaching the formation of fully depleted (FD...
There are several significant advantages of memristors, such as their nano scale, fast switching speed, power efficiency and compatibility with CMOS technology, as one of the alternatives in the next generation of semiconductor storage devices. D-fli...
This paper reports on a CMOS fully integrated optoelectronic sensing system composed of a Si photodiode and a transimpedance amplifier acting as the electronic analog front-end for the conditioning of the photocurrent generated by the photodiode. The...
This paper develops the technologies of mechanical characterization of CMOS-MEMS devices, and presents a robust algorithm for extracting mechanical properties, such as Young’s modulus, and mean stress, through the external electrical circuit behavior...
The availability of quantum microprocessors is mandatory, to efficiently run those quantum algorithms promising a radical leap forward in computation capability. Silicon-based nanostructured qubits appear today as a very interesting approach, because...
The 2007 Nobel Prize in Physics can be understood as a global recognition to the rapid development of the Giant Magnetoresistance (GMR), from both the physics and engineering points of view. Behind the utilization of GMR structures as read heads for...
30 November 2015
This work proposes a novel demodulation circuit to address the implementation of Wake-Up Receivers (Wu-Rx) in Wireless Sensor Nodes (WSN). This RF demodulator, namely Modulated Oscillator for envelOpe Detection (MOOD), is compatible with both FSK and...
of 4