Next Article in Journal
Prototypes of Newly Conceived Inorganic and Biological Sensors for Health and Environmental Applications
Previous Article in Journal
Geosensor Data Representation Using Layered Slope Grids
Article Menu

Export Article

Open AccessArticle

CMOS-MEMS Test-Key for Extracting Wafer-Level Mechanical Properties

Department of Mechanical and Electro-Mechanical Engineering, National Sun Yat-sen University, Kaohsiung 80424, Taiwan
Department of Mechanical and Electro-Mechanical Engineering, Center of Green Technology, National ILan University, ILan 260, Taiwan
Institute of Applied Mechanics, National Taiwan University, Taipei 10617, Taiwan
Author to whom correspondence should be addressed.
Sensors 2012, 12(12), 17094-17111;
Received: 25 October 2012 / Revised: 28 November 2012 / Accepted: 6 December 2012 / Published: 12 December 2012
(This article belongs to the Section Physical Sensors)
PDF [572 KB, uploaded 21 June 2014]


This paper develops the technologies of mechanical characterization of CMOS-MEMS devices, and presents a robust algorithm for extracting mechanical properties, such as Young’s modulus, and mean stress, through the external electrical circuit behavior of the micro test-key. An approximate analytical solution for the pull-in voltage of bridge-type test-key subjected to electrostatic load and initial stress is derived based on Euler’s beam model and the minimum energy method. Then one can use the aforesaid closed form solution of the pull-in voltage to extract the Young’s modulus and mean stress of the test structures. The test cases include the test-key fabricated by a TSMC 0.18 μm standard CMOS process, and the experimental results refer to Osterberg’s work on the pull-in voltage of single crystal silicone microbridges. The extracted material properties calculated by the present algorithm are valid. Besides, this paper also analyzes the robustness of this algorithm regarding the dimension effects of test-keys. This mechanical properties extracting method is expected to be applicable to the wafer-level testing in micro-device manufacture and compatible with the wafer-level testing in IC industry since the test process is non-destructive. View Full-Text
Keywords: pull-in voltage; Young’s modulus; mean stress; CMOS-MEMS pull-in voltage; Young’s modulus; mean stress; CMOS-MEMS
This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).

Share & Cite This Article

MDPI and ACS Style

Chuang, W.-C.; Hu, Y.-C.; Chang, P.-Z. CMOS-MEMS Test-Key for Extracting Wafer-Level Mechanical Properties. Sensors 2012, 12, 17094-17111.

Show more citation formats Show less citations formats

Related Articles

Article Metrics

Article Access Statistics



[Return to top]
Sensors EISSN 1424-8220 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top