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Volume 13
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10.3390/cryst13020323
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Article

Investigation of the Temperature Dependence of Volt-Ampere Characteristics of a Thin-Film Si3N4 Memristor

by
Dmitry Mizginov
1,
Oleg Telminov
1,*,
Sergey Yanovich
1,
Dmitry Zhevnenko
1,2,
Fedor Meshchaninov
1,3 and
Evgeny Gornev
1
1
Laboratory for the Study of Neuromorphic Systems, Joint-Stock Company Molecular Electronics Research Institute, 124460 Moscow, Russia
2
Industrial Artificial Intelligence, Artificial Intelligence Research Institute, 105064 Moscow, Russia
3
Research Center in Artificial Intelligence in the Direction of Optimization of Management Decisions to Reduce Carbon Footprint, Skolkovo Institute of Science and Technology, 121205 Moscow, Russia
*
Author to whom correspondence should be addressed.
Crystals 2023, 13(2), 323; https://doi.org/10.3390/cryst13020323
Submission received: 31 December 2022 / Revised: 9 February 2023 / Accepted: 13 February 2023 / Published: 15 February 2023
(This article belongs to the Special Issue Semiconductor Materials and Devices)
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Abstract

The compatibility of memristor materials with advanced complementary metal-oxide-semiconductor (CMOS) technology is a key factor for microelectronics element base manufacturing. Therefore, we continued studying previously fabricated CMOS-compatible Ni/Si3N4/SiO2/p+-Si samples. We approximated volt-ampere characteristics (VAC) at different temperatures using the general form of the spatial charge-limiting current (SCLC) equation assuming exponential and Gaussian trap distribution within the band gap of Si3N4. Our approximation demonstrated better experimental data matching compared to previous work, where the approximation was based on the uniform trap distribution law. Further, we performed another additional sample measurement set of the samples to evaluate the parameters of the low-resistance state (LRS) variations at different temperatures. Analysis of these measurements allowed us to estimate the temperatures at which the samples will retain LRS for 10 years.
Keywords: memristor; silicon nitride; trap distribution; retention memristor; silicon nitride; trap distribution; retention

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MDPI and ACS Style

Mizginov, D.; Telminov, O.; Yanovich, S.; Zhevnenko, D.; Meshchaninov, F.; Gornev, E. Investigation of the Temperature Dependence of Volt-Ampere Characteristics of a Thin-Film Si3N4 Memristor. Crystals 2023, 13, 323. https://doi.org/10.3390/cryst13020323

AMA Style

Mizginov D, Telminov O, Yanovich S, Zhevnenko D, Meshchaninov F, Gornev E. Investigation of the Temperature Dependence of Volt-Ampere Characteristics of a Thin-Film Si3N4 Memristor. Crystals. 2023; 13(2):323. https://doi.org/10.3390/cryst13020323

Chicago/Turabian Style

Mizginov, Dmitry, Oleg Telminov, Sergey Yanovich, Dmitry Zhevnenko, Fedor Meshchaninov, and Evgeny Gornev. 2023. "Investigation of the Temperature Dependence of Volt-Ampere Characteristics of a Thin-Film Si3N4 Memristor" Crystals 13, no. 2: 323. https://doi.org/10.3390/cryst13020323

APA Style

Mizginov, D., Telminov, O., Yanovich, S., Zhevnenko, D., Meshchaninov, F., & Gornev, E. (2023). Investigation of the Temperature Dependence of Volt-Ampere Characteristics of a Thin-Film Si3N4 Memristor. Crystals, 13(2), 323. https://doi.org/10.3390/cryst13020323

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