1,629 Results Found

Different growth stages and surface morphology of the epitaxial 3C-SiC/Si(100) structures were studied. Heterocompositions were grown in vacuum from hydric compounds at a lower temperature. The composition, surface morphology and crystal structure of...

This work provides a comprehensive investigation of nitrogen and aluminum doping and its consequences for the physical properties of 3C-SiC. Free-standing 3C-SiC heteroepitaxial layers, intentionally doped with nitrogen or aluminum, were grown on Si...

Compared to bulk silicon carbide (SiC) wafers, SiC-on-insulator (SiCOI) substrates enable new device designs of electronic switches as well as novel photonic applications. One application is a micro-resonator for the usage in a Kerr frequency comb. F...

Metal-oxide-semiconductor (MOS) capacitors with Al₂O₃ as a gate insulator are fabricated on cubic silicon carbide (3C-SiC). Al₂O₃ is deposited both by thermal and plasma-enhanced Atomic Layer Deposition (ALD) on a thermally grown 5 nm SiO₂ interlayer...

3C-SiC is an emerging material for MEMS systems thanks to its outstanding mechanical properties (high Young’s modulus and low density) that allow the device to be operated for a given geometry at higher frequency. The mechanical properties of this ma...

In this study, a novel and rapid top-down synthesis method for the successful synthesis of few-layered 2D SiC is reported. Since the theoretical prediction of planar and stable 2D SiC with a direct bandgap, only a few experimental methods have overco...

The quality of the N-doped 4H-SiC homoepitaxial layers grown via hot-wall horizontal chemical vapor deposition (CVD) was evaluated at various C/Si ratios (1.0–1.2) and growth temperatures (1570–1630 °C). The microstructure and morphol...

Three and five-layered silicon carbide-based composites containing 0, 5, and 15 wt.% of graphene nanoplatelets (GNPs) were prepared with the aim to obtain a sufficiently high electrical conductivity in the surface layer suitable for electric discharg...

We grew epitaxial layers on 4H-silicon carbide (SiC) Si-face substrates with a 1° off-angle. The suppression of 3C-inclusion formation during growth at a high C/Si ratio was investigated, because a growth technique with a high C/Si ratio is needed to...

In this study, a 4H-SiC homoepitaxial layer was grown on a 150 mm 4° off-axis substrate using a horizontal hot-wall CVD reactor. The research aimed to investigate the impact of varying the C/Si ratio and temperature while also changing the N₂ flo...

Microarc oxidation (MAO) layers were prepared using 8g/L Na₂SiO₃ + 6g/L (NaPO₃)₆ + 4g/L Na₂WO₄ electrolyte with the addition of 2g/L Ti₃SiC₂/Ti₃AlC₂ particles under constant-current mode. The roughness, porosity, composition, surface/cross-sectional...

With the intrinsic material advantages, silicon carbide (SiC) power devices can operate at high voltage, high switching frequency, and high temperature. However, for SiC wafers with high hardness (Mohs hardness of 9.5), the diamond blade dicing suffe...

In this study, we grew homoepitaxial layers on 3-inch on-axis carbon-face 4H-silicon carbide substrates and attempted to suppress the generation of 3C-inclusions. It was found that the 3C-inclusion density decreased with increasing time spent on reac...

In this study, a 4H-SiC homoepitaxial layer was grown on a 150 mm 4° off-axis substrate using a horizontal hot wall chemical vapor deposition reactor. Comparing C₃H₈ and C₂H₄ as C sources, the sample grown with C₂H₄ exhibited a slower growth rate...

Advances towards achieving the goal of miniature 4H-SiC based radiation detectors for harsh environment application have been studied extensively and reviewed in this article. The miniaturized devices were developed at the University of South Carolin...

In this study, a three-dimensional (3D) interconnected porous Ni/SiC skeleton (3D Ni/SiC) was synthesized by binder-free hydrogen bubble template-assisted electrodeposition in an electrolyte containing Ni²⁺ ions and SiC nanopowders. This 3D Ni/SiC sk...

This study provides a comprehensive investigation into the growth behavior of boron nitride (BN) buffer layers on Silicon carbide (SiC) substrates and their influence on interfacial band alignment. BN layers were deposited on semi-insulating SiC by R...

The paper studies the influence of diamond grinding, lapping, and polishing on the surface layer and defectiveness of the Al₂O₃/TiC and SiAlON ceramic samples. The index of defectiveness I_D, which is the product of the defect density and the defectiv...

In this study, we used a horizontal hot-wall CVD epitaxy apparatus to grow epitaxial layers on 4° off-axis 4H-SiC substrates. Epitaxial films were grown by adjusting the flow rate of the source gas at different levels. With an increase in the sou...

This study investigates the enhancement of thermal conductivity in silicon carbide (SiC) matrix pellets for accident-tolerant fuels via atomic layer deposition (ALD) of alumina (Al₂O₃) coatings. Pressure-holding ALD protocols ensured precursor satura...

The homoepitaxial growth of 4H-SiC films was conducted on 4H-SiC 150 mm 4° off-axis substrates by using a home-made hot-wall chemical vapor deposition (CVD) reactor. Special attention was paid to the influence of the growth temperature on the sur...

[Eu(³DPIQC)₃] (where DPIQC = 3-(diphenyl phosphoryl)-1-isoquinolinecarboxylate), a luminescent europium complex with antenna ligands, has been carefully embedded within a polyvinyl butyral (PVB) matrix and the resulting material was used to prepare f...

Thin films of single-crystal silicon carbide of cubic polytype with a thickness of 40–100 nm, which were grown from the silicon substrate material by the method of coordinated substitution of atoms by a chemical reaction of silicon with carbon...

It has previously been reported that epitaxial growth of ZnO can be obtained at low temperatures by atomic layer deposition (ALD) onto a GaN (0001-Ga) surface, corresponding to a ~2.3% compressive lattice mismatch of the deposited ZnO. The question a...

In the present work, a theoretical model of three-dimensional (3D) transient temperature field for Al alloy brake discs with Al₂O₃-SiC_(3D)/Al alloy wear-resisting surface layer was established. 3D transient thermo-stress coupling finite element (FE)...

In order to reveal the relationship between residual stress in Si layers of SiC/SiC composites and the different parameters used in their preparation, the residual stress of the coating surface was tested using X-ray sin²ψ technology and laser Ra...

Friction stir additive manufacturing (FSAM) is a promising solid-state technique for fabricating high-strength aluminum alloys, such as Al-7075, which are difficult to process using conventional melting-based additive manufacturing (AM) methods. This...

The reactive soldering of silicon-carbide (SiC) ceramics to a Ni-SiC composite was investigated using an Sn-5Sb-3Ti active solder and electron-beam heating at 750 °C, 850 °C and 950 °C. Wettability: The average contact angle decreased fro...

Systematic results of lattice dynamical calculations are reported as a function of m and n for the novel (SiC)_m/(GeC)_n superlattices (SLs) by exploiting a modified linear-chain model and a realistic rigid-ion model (RIM). A bond polarizability method...

The electronic and transport properties of epitaxial graphene are dominated by the interactions the material makes with its surroundings. Based on the transport properties of epitaxial graphene on SiC and 3C-SiC/Si substrates reported in the literatu...

Electrochemical mechanical polishing is a critical technology for improving the surface quality of silicon carbide (SiC) substrates. However, the fundamental electrochemical corrosion mechanism of the SiC substrate remains incompletely understood. In...

The state-of-the-art silicon insulated-gate bipolar transistor (IGBT) features a trench gate, since it enhances the conductivity modulation. The SiC trench IGBT, however, faces the critical challenge of a high electric field in the gate oxide, which...

A systematic study of epi-AlGaN/GaN on a SiC substrate was conducted through a comprehensive analysis of material properties and device performance. In this novel epitaxial design, an AlGaN/GaN channel layer was grown directly on the AlN nucleation l...

Graphene in its pristine form has demonstrated a gas detection ability in an inert carrier gas. For practical use in ambient atmosphere, its sensor properties should be enhanced with functionalisation by defects and dopants, or by decoration with nan...

We propose a novel silicon carbide (SiC) self-aligned N-type ion implanted trench MOSFET (NITMOS) device. The maximum electric field in the gate oxide could be effectively reduced to below 3 MV/cm with the introduction of the P-epi layer below the tr...

Silicon carbide junction field-effect transistors (SiC JFETs) are promising candidates as devices applicable to radiation conditions, such as the decommissioning of nuclear facilities or the space environment. We investigate the origin of the thresho...

A ZrC–SiC inner layer was fabricated on carbon/carbon composites by pack cementation at different temperatures, aiming to prepare a transition layer for subsequent deposition of SiC and ZrC–SiC layer by chemical vapor deposition and plasma spray. Res...

In spite of the great expectations for epitaxial graphene (EG) on silicon carbide (SiC) to be used as a next-generation high-performance component in high-power nano- and micro-electronics, there are still many technological challenges and fundamenta...

Thermomechanical action during high-performance diamond grinding of sintered cutting Al₂O₃/TiC and SiAlON ceramics leads to increased defectiveness of the surface layer of the deposited TiZrN and CrAlSiN/DLC coatings. It predetermines the discontinuo...

The aim of this Special Issue is to provide a scientific platform for recognized experts in the field of epitaxial graphene on SiC to present their recent studies towards a deeper comprehension of growth mechanisms, property engineering and device pr...

Exceptionally sensitive and selective graphene-based chemiresistive gas sensors were produced as a result of graphene functionalisation with a sub-nanometer V₂O₅ layer by using the method of pulsed laser deposition. Two different types of graphene we...

Low thermal conductivity and large coefficient of thermal expansion (CTE) are the most serious disadvantages of the polymer dielectric for the interposer redistribution layer (RDL). In this paper, a high thermal conductivity and low CTE composite wit...

In this work we have critically reviewed the processes in high-temperature sublimation growth of graphene in Ar atmosphere using closed graphite crucible. Special focus is put on buffer layer formation and free charge carrier properties of monolayer...

A new silicon carbide (SiC) planar-gate insulated-gate bipolar transistor (IGBT) is proposed and comprehensively investigated in this paper. Compared to the traditional SiC planar-gate IGBT, the new IGBT boasts a much stronger injection enhancement e...

Exploring the phonon characteristics of novel group-IV binary XC (X = Si, Ge, Sn) carbides and their polymorphs has recently gained considerable scientific/technological interest as promising alternatives to Si for high-temperature, high-power, optoe...

Wafer-scale on-axis 4H-SiC epitaxial layers with very low roughness were obtained in this study. By performing carbon-rich hydrogen etching and epitaxial growth of the epitaxial layer at different temperatures, local mirror regions (LMRs) with root m...

A comparative analysis of three advanced architectures for tandem solar cells (SCs) is discussed, respectively: metal oxide, thin film, and perovskite. Plasmonic solar cells could further increase solar cell efficiency. Using this development, an inn...

Graphene grown on C-face SiC substrates using two procedures, high and low growth temperature and different ambients, was investigated using Low Energy Electron Microscopy (LEEM), X-ray Photo Electron Electron Microscopy (XPEEM), selected area Low En...

Single-crystal silicon carbide has excellent electrical, mechanical, and chemical properties. However, due to its high hardness material properties, achieving high-precision manufacturing of single-crystal silicon carbide with an ultra-smooth surface...

In this study, we systematically explore the impact of C/Si ratio, pre-carbonization time, H₂ etching time, and growth pressure on the buffer layer and subsequent epitaxial layer of 6-inch 4H-SiC wafers. Our findings indicate that the buffer layer&rs...