Next Article in Journal
Effects of Hepatic Steatosis on Non-Invasive Liver Fibrosis Measurements Between Hepatitis B and Other Etiologies
Next Article in Special Issue
Review of Radiation-Induced Effects in Polyimide
Previous Article in Journal
GIS-Based Solar Radiation Mapping, Site Evaluation, and Potential Assessment: A Review
Previous Article in Special Issue
Study on the Thermal Properties and Enzymatic Degradability of Chiral Polyamide-Imides Films Based on Amino Acids
Article Menu
Issue 9 (May-1) cover image

Export Article

Open AccessArticle

Preparation and Characterization of High Thermal Conductivity and Low CTE Polyimide Composite Reinforced with Diamond Nanoparticles/SiC Whiskers for 3D IC Interposer RDL Dielectric

1
National Key Laboratory of Science and Technology on Micro/Nano Fabrication, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
2
School of Electronic and Electrical Engineering, Shanghai University of Engineering Science, Shanghai 201620, China
*
Author to whom correspondence should be addressed.
Appl. Sci. 2019, 9(9), 1962; https://doi.org/10.3390/app9091962
Received: 27 March 2019 / Revised: 5 May 2019 / Accepted: 8 May 2019 / Published: 13 May 2019
(This article belongs to the Special Issue Advances in Polyimide Films: Preparation, Properties and Applications)
  |  
PDF [4762 KB, uploaded 13 May 2019]
  |  

Abstract

Low thermal conductivity and large coefficient of thermal expansion (CTE) are the most serious disadvantages of the polymer dielectric for the interposer redistribution layer (RDL). In this paper, a high thermal conductivity and low CTE composite with polyimide (PI) matrix and diamond nanoparticles/SiC whiskers reinforcement is proposed. The preparation and characterization of the composite film are presented and the effects of the composite on the improvement of the interposer properties are investigated. With 10 wt% diamond-nanoparticles and 7 wt% SiC-whiskers, the composite film has a thermal conductivity of 1.63 W/m·K and a CTE of 16.7 ppm/°C (compared with 0.19 W/m·K and 55.6 ppm/°C of the PI). Interposers with PI RDL dielectric and the composite RDL dielectric are fabricated, respectively. The simulation result shows that the composite dielectric can significantly enhance the properties of the interposer compared with the PI dielectric. The thermal resistance of the interposer decreases from 8.04 °C/W to 1.15 °C/W. The maximum von Mises stress decreases from 72.8 MPa to 16.9 MPa and the warpage decreases from 1.13 μm to 0.15 μm. Thermal distribution tests are performed as well. The results show that the maximum temperature of the interposer decreases from 64 °C to 45.1 °C. The composite developed in this study can reduce the temperature and enhance the reliability of the chips with interposers. It has the potential to expand the application of the interposers in high thermal density integration and high reliability devices. View Full-Text
Keywords: diamond nanoparticle; SiC whisker; polyimide; high conductivity composite; interposer; redistribution layer dielectric diamond nanoparticle; SiC whisker; polyimide; high conductivity composite; interposer; redistribution layer dielectric
Figures

Figure 1

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).
SciFeed

Share & Cite This Article

MDPI and ACS Style

Luo, J.; Wu, Y.; Sun, Y.; Wang, G.; Liu, Y.; Zhao, X.; Ding, G. Preparation and Characterization of High Thermal Conductivity and Low CTE Polyimide Composite Reinforced with Diamond Nanoparticles/SiC Whiskers for 3D IC Interposer RDL Dielectric. Appl. Sci. 2019, 9, 1962.

Show more citation formats Show less citations formats

Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Related Articles

Article Metrics

Article Access Statistics

1

Comments

[Return to top]
Appl. Sci. EISSN 2076-3417 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top