The effect of an insulation lid on the growth of 4-inch β-Ga2O3 single crystals by the Czochralski method is analyzed by numerical simulation. The insulation lid mainly hinders upward radiant heat transfer from the melt and crucible and increase...
β-Ga2O3 is an ultra-wide bandgap semiconductor (Eg~4.8 eV) of interest for many applications, including optoelectronics. Undoped Ga2O3 emits light in the UV range that can be tuned to the visible region of the spectrum by rare earth dopants. In...
Monoclinic β-Ga2O3 microbelts were successfully fabricated using a one-step optical vapor supersaturated precipitation method, which exhibited advantages including a free-standing substrate, prefect surface, and low cost. The as-grown microbelts...
In this work, we have achieved synthesizing large-area high-density β-Ga2O3 nanowires on c-plane sapphire substrate by metal–organic chemical vapor deposition assisted with Au nanocrystal seeds as catalysts. These nanowires exhibit one-dim...
β-Ga2O3 crystals have attracted great attention in the fields of photonics and photoelectronics because of their ultrawide band gap and high thermal conductivity. Here, a pure β-Ga2O3 crystal was successfully grown by the optical floating z...
In this paper, the effects of oxygen vacancy and gallium vacancy on the optical and scintillation properties of undoped β-Ga2O3 crystal and 2.5 mol % Al doped gallium oxide were investigated. For the undoped β-Ga2O3, the transmittance is im...
Systemic investigations are performed to comprehend the structural, optical, and electrical characteristics of four niobium (Nb) doped β-Ga2O3 crystals (β-Ga2O3:Nb) grown by the optical floating zone (OFZ) method. All of the β-Ga2O3:Nb...
Floating particles often appear during the Czochralski (CZ) growth of β-Ga2O3 in the Ir crucible, thereby impeding the seeding process. Identifying the floating nanoparticles and then inhibiting or removing them is critical for growing high-qual...
This study reveals the significant role of the pre-melting process in growing high-quality (100) β-Ga2O3 single crystals from 4N powder (99.995% purity) using the edge-defined film-fed growth (EFG) method. Among various bulk melt growth methods,...
This work investigates a comprehensive temperature-dependent photoluminescence (PL) study (7–300 K) of β-Ga2O3 single crystals under 250 nm excitation. The emission consists of three competing bands at ~3.55 eV (J1), ~3.37 eV (J2), and ~3....
As a crystal grows, the temperature distribution of the crystal and melt will change. It is necessary to study the dynamic process of single-crystal growth. Due to the relatively low crystallization rates used in the industrial Czochralski growth sys...
Beta gallium oxide, β-Ga2O3, is one of the promising ultrawide bandgap semiconductors with a monoclinic (C2/m) β-phase structure showing strong anisotropic properties. To improve the performance of these devices, more optical characterizati...
The difficulties in growing large-size bulk β-Ga2O3 single crystals with the Czochralski method were numerically analyzed. The flow and temperature fields for crystals that were four and six inches in diameter were studied. When the crystal diam...
To obtain high-quality n-type doped β-Ga2O3 films, silane was used as an n-type dopant to grow Si-doped β-Ga2O3 films on (100) β-Ga2O3 substrates by metal-organic chemical vapor deposition (MOCVD). The electron concentrations of the Si-doped β-Ga2O3...
Undoped and Mg2+-doped β-Ga2O3-20% In2O3 solid solution microcrystalline samples were synthesized using the high-temperature solid-state chemical reaction method to investigate the influence of native defects on structural, luminescent, and elec...
The long-range crystallographic order and anisotropy in β-(AlxGa1−x)2O3 (x = 0.0, 0.06, 0.11, 0.17, 0.26) crystals, prepared by optical floating zone method with different Al composition, is systematically studied by spatial correlation mo...
First-principles density functional theory (DFT) is employed to study the electronic structure of oxygen and gallium vacancies in monoclinic bulk β-Ga2O3 crystals. Hybrid exchange–correlation functional B3LYP within the density functional...
In this study, we investigate the optical and structural properties of Cu-doped β-Ga2O3 nanostructures synthesized via a hydrothermal method, followed by annealing in ambient O2. Different Cu doping concentrations (0, 1.6, and 4.8 at.%) are intr...
Our numerical modelling of the Czochralski growth of single crystalline β-Ga 2 O 3 crystals (monoclinic symmetry) starts at the 2D heat transport analysis within the crystal growth furnace, proceeds with the 3D heat transport and fluid...
High-aspect ratio β-Ga2O3 nanorods consisting of prism-like crystals were formed using gallium oxyhydroxide and ammonia hydroxide via a hydrothermal synthesis followed by the subsequent calcination process. The formation of high-aspect ratio &be...
Gallium oxide (Ga2O3) is a semiconductor with a wide bandgap of ~5.0 eV and large breakdown voltages (>8 MV·cm−1). Among the crystal phases of Ga2O3, the monoclinic β-Ga2O3 is well known to be suitable for many device application...
This work studies the technological preparation conditions, morphology, structural characteristics and elemental composition, and optical and photoluminescent properties of GaSe single crystals and Eu-doped β–Ga2O3 nanoformations on &epsil...
β-Ga2O3 is a well-known semiconductor material for power devices and other applications. Recently, β-Ga2O3 has also been reported as a scintillator material with a light yield of approximately 8400 ph./MeV, scintillation decay time of <1...
The electrical and optoelectronic performance of semiconductor devices are mainly affected by the presence of defects or crystal imperfections in the semiconductor. Oxygen vacancies are one of the most common defects and are known to serve as electro...
Iron impurities are believed to act as deep acceptors that can compensate for the n-type conductivity in as-grown Ga2O3, but several scientific issues, such as the site occupation of the Fe heteroatom and the complexes of Fe-doped β-Ga2O3 with n...
The crystal structure, electron charge density, band structure, density of states, and optical properties of pure and strontium (Sr)-doped β-Ga2O3 were studied using the first-principles calculation based on the density functional theory (DFT) within...
As a wide energy band gap semiconductor, a Ga2O3 thin film was prepared by the sol–gel process with different annealing processes. Since Ga2O3 is a type of metal oxide structure, an oxygen annealing process can be considered to remove oxygen defects....
Effective Ohmic contact between metals and their conductive channels is a crucial step in developing high-performance Ga2O3-based transistors. Distinct from bulk materials, excess thermal energy of the annealing process can destroy the low-dimensiona...
β-Ga2O3 Schottky barrier diodes (SBDs) suffer from the electric field crowding and barrier height lowering effect, resulting in a low breakdown voltage (BV) and high reverse leakage current. Here, we developed β-Ga2O3 trench MOS-type Schott...
GaSxSe1−x solid solutions are layered semiconductors with a band gap between 2.0 and 2.6 eV. Their single crystals are formed by planar packings of S/Se-Ga-Ga-S/Se type, with weak polarization bonds between them, which allows obtaining, by spli...
A high aluminum (Al) content β-(AlxGa1−x)2O3 film was synthesized on c-plane sapphire substrate using the gallium (Ga) diffusion method. The obtained β-(AlxGa1−x)2O3 film had an average thickness of 750 nm and a surface roughnes...
In this study, the results of hydrogen plasma treatments of β-Ga2O3, α-Ga2O3, κ-Ga2O3 and γ-Ga2O3 polymorphs are analyzed. For all polymorphs, the results strongly suggest an interplay between donor-like hydrogen configurations...
Using the Bridgman technique, GaSe single crystals were obtained which were mechanically split into plane-parallel plates with a wide range of thicknesses. By heat treatment in air at 820 °C and 900 °C, for 30 min and 6 h, micro- and nanocomp...
In this work, we prepared ultra-long Si-doped β-Ga2O3 nanowires on annealed Al2O3-film/Si substrate by low-pressure chemical vapor deposition (LPCVD) assisted by Au as catalyst. The length of nanowires exceeds 300 μm and diameters range from...
The synthesis of β-Ga2O3 ceramic was achieved using high-energy electron beams for the first time. The irradiation of gallium oxide powder in a copper crucible using a 1.4 MeV electron beam resulted in a monolithic ceramic structure, eliminating...
In this paper, we demonstrate the direct epitaxial growth of c-plane GaN on a preheated (−2 0 1) β-Ga2O3 single-crystal substrate with no interlayer or pre-patterning processes by using the atmospheric pressure metalorganic chemical vapor deposition...
Ultra-wide bandgap Ga2O3-based optoelectronic devices have attracted considerable attention owing to their special significance in military and commercial applications. Using RF magnetron sputtering and post-annealing, monoclinic Ga2O3 films of vario...
In this study, β-Ga2O3 films were fabricated on a quartz substrate by the sol–gel method using different drying temperatures and solutions of different molar concentrations, and their structural, optical, and electrical properties were evaluated. The...
Beta-phase gallium oxide (β-Ga2O3) is a cutting-edge ultrawide bandgap (UWBG) semiconductor, featuring a bandgap energy of around 4.8 eV and a highly critical electric field strength of about 8 MV/cm. These properties make it highly suitable for...
An accurate knowledge of the optical properties of β-Ga2O3 is key to developing the full potential of this oxide for photonics applications. In particular, the dependence of these properties on temperature is still being studied. Optical micro-...
Gallium oxide (Ga2O3) has gained considerable attention due to its wide bandgap, the availability of native substrates, and its excellent properties for solar-blind photodetectors, transparent electronics, and next-generation power devices. However,...
β−Ga2O3 field−effect transistors (FETs) were fabricated with and without local thinning to change the threshold voltage. A 220 nm Ga2O3 layer was mechanically exfoliated from a Cr−doped gallium oxide single crystal. Approximate...
The CIGS (Cu(In, Ga)Se2) thin film solar cell sputtering process utilizes only 30% of the original target. The remaining 70% of the target must be recycled to achieve In, Ga, and Se rare metal sustainable use. It is, therefore, very important to esta...
In the present work, a new method of growing layers of three main crystal modifications of Ga2O3, namely α-phase, ε-phase, and β-phase, with thickness of 1 µm or more was developed. The method is based on the use of two appro...
New crystals (1–4) of organic conductors based on the radical cation salts of the bis(ethylenedithio)tetrathiafulvalene (BEDT-TTF) with paramagnetic and diamagnetic tris(oxalato)metallate anions {A+[M3+(ox)3]3−G}2−, where M is Cr, Ga; G is 2-chloropy...
The structure of µ-oxobis(phthalocyaninato)gallium(III) (PcGaOGaPc) and the structure of a second modification of chloro(phthalocyaninato)gallium(III) (ClGaPc) has been determined by single-crystal X-ray analysis. Sublimation of the respective...
Using the slow-cooling method in selected MoO3-based fluxes, single-crystals of GeO2 and GaPO4 materials with an α-quartz-like structure were grown at high temperatures (T ≥ 950 °C). These piezoelectric materials were obtained in millimeter-size as w...
The phytochemical constituents of Calligonum tetrapterum Jaub. & Spach (Family Polygonaceae) were studied for the first time. The study resulted in the isolation of the rare flavonol glycoside, kaempferol 3-O-(6″-O-acetyl)-glucoside,(K3G-A)...
The crystals of (Lu,Gd)3(Ga,Al)5O12 multicomponent garnets with high density ρ and effective atomic number Zeff are characterized by high scintillation efficiency and a light yield value up to 50,000 ph/MeV. During recent years, single-crystallin...
We report on crystal structure and thermal stability of epitaxial ε/κ-Ga2O3 thin films grown by liquid-injection metal–organic chemical vapor deposition (LI-MOCVD). Si-doped Ga2O3 films with a thickness of 120 nm and root mean squ...
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