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Nanomaterials
Volume 13
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10.3390/nano13071199
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Article

Plasma Nitridation Effect on β-Ga2O3 Semiconductors

by
Sunjae Kim
1,2,
Minje Kim
1,2,
Jihyun Kim
3 and
Wan Sik Hwang
1,2,*
1
Department of Materials Science and Engineering, Korea Aerospace University, Goyang 10540, Republic of Korea
2
Department of Smart Air Mobility, Korea Aerospace University, Goyang 10540, Republic of Korea
3
School of Chemical and Biological Engineering, Seoul National University, Seoul 08826, Republic of Korea
*
Author to whom correspondence should be addressed.
Nanomaterials 2023, 13(7), 1199; https://doi.org/10.3390/nano13071199
Submission received: 8 March 2023 / Revised: 22 March 2023 / Accepted: 23 March 2023 / Published: 28 March 2023
(This article belongs to the Special Issue Ga2O3-Based Nanomaterials)
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Abstract

The electrical and optoelectronic performance of semiconductor devices are mainly affected by the presence of defects or crystal imperfections in the semiconductor. Oxygen vacancies are one of the most common defects and are known to serve as electron trap sites whose energy levels are below the conduction band (CB) edge for metal oxide semiconductors, including β-Ga2O3. In this study, the effects of plasma nitridation (PN) on polycrystalline β-Ga2O3 thin films are discussed. In detail, the electrical and optical properties of polycrystalline β-Ga2O3 thin films are compared at different PN treatment times. The results show that PN treatment on polycrystalline β-Ga2O3 thin films effectively diminish the electron trap sites. This PN treatment technology could improve the device performance of both electronics and optoelectronics.
Keywords: Ga2O3; gallium oxide; plasma nitridation; defect density Ga2O3; gallium oxide; plasma nitridation; defect density

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MDPI and ACS Style

Kim, S.; Kim, M.; Kim, J.; Hwang, W.S. Plasma Nitridation Effect on β-Ga2O3 Semiconductors. Nanomaterials 2023, 13, 1199. https://doi.org/10.3390/nano13071199

AMA Style

Kim S, Kim M, Kim J, Hwang WS. Plasma Nitridation Effect on β-Ga2O3 Semiconductors. Nanomaterials. 2023; 13(7):1199. https://doi.org/10.3390/nano13071199

Chicago/Turabian Style

Kim, Sunjae, Minje Kim, Jihyun Kim, and Wan Sik Hwang. 2023. "Plasma Nitridation Effect on β-Ga2O3 Semiconductors" Nanomaterials 13, no. 7: 1199. https://doi.org/10.3390/nano13071199

APA Style

Kim, S., Kim, M., Kim, J., & Hwang, W. S. (2023). Plasma Nitridation Effect on β-Ga2O3 Semiconductors. Nanomaterials, 13(7), 1199. https://doi.org/10.3390/nano13071199

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