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Numerical Modelling of the Czochralski Growth of β-Ga2O3

Leibniz Institute for Crystal Growth (IKZ), Max-Born-Str. 2, 12489 Berlin, Germany
Institute for Geology, Mineralogy and Geophysics, Ruhr University Bochum, 44801 Bochum, Germany
Author to whom correspondence should be addressed.
Academic Editor: Bing Gao
Crystals 2017, 7(1), 26;
Received: 25 November 2016 / Revised: 3 January 2017 / Accepted: 6 January 2017 / Published: 17 January 2017
(This article belongs to the Special Issue Global Modeling in Crystal Growth)
Our numerical modelling of the Czochralski growth of single crystalline β-Ga 2 O 3 crystals (monoclinic symmetry) starts at the 2D heat transport analysis within the crystal growth furnace, proceeds with the 3D heat transport and fluid flow analysis in the crystal-melt-crucible arrangement and targets the 3D thermal stress analysis within the β-Ga 2 O 3 crystal. In order to perform the stress analysis, we measured the thermal expansion coefficients and the elastic stiffness coefficients in two samples of a β-Ga 2 O 3 crystal grown at IKZ. Additionally, we analyse published data of β-Ga 2 O 3 material properties and use data from literature for comparative calculations. The computations were performed by the software packages CrysMAS, CGsim, Ansys-cfx and comsol Multiphysics. By the hand of two different thermal expansion data sets and two different crystal orientations, we analyse the elastic stresses in terms of the von-Mises stress. View Full-Text
Keywords: global simulation; Ga2O3; thermal stress global simulation; Ga2O3; thermal stress
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MDPI and ACS Style

Miller, W.; Böttcher, K.; Galazka, Z.; Schreuer, J. Numerical Modelling of the Czochralski Growth of β-Ga2O3. Crystals 2017, 7, 26.

AMA Style

Miller W, Böttcher K, Galazka Z, Schreuer J. Numerical Modelling of the Czochralski Growth of β-Ga2O3. Crystals. 2017; 7(1):26.

Chicago/Turabian Style

Miller, Wolfram, Klaus Böttcher, Zbigniew Galazka, and Jürgen Schreuer. 2017. "Numerical Modelling of the Czochralski Growth of β-Ga2O3" Crystals 7, no. 1: 26.

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