Electronics, Volume 9, Issue 11
2020 November - 237 articles
Cover Story: AlGaN/GaN MISHEMTs with low temperature epitaxy (LTE) grown AlN as the gate dielectric have successfully been demonstrated for the first time. LTE is a novel deposition method combining physical vapor deposition and chemical vapor deposition, which allows the deposition of high-quality AlN films even at a low deposition temperature of 200 °C. After a post-gate annealing at 400 °C on the MIS-diode, a low minimum LTE-AlN and GaN density of interface states (Dit) value of 5.0 × 1011 cm-2eV-1 was extracted. This low Dit enables the AlGaN/GaN MISHEMTs reported in this work to achieve good device performance comparable to MISHEMTs using other gate dielectric deposition techniques. This study indicates that LTE-AlN with optimized post-gate annealing is a viable alternate method to realize good-performance AlGaN/GaN MISHEMTs. View this paper - Issues are regarded as officially published after their release is announced to the table of contents alert mailing list .
- You may sign up for email alerts to receive table of contents of newly released issues.
- PDF is the official format for papers published in both, html and pdf forms. To view the papers in pdf format, click on the "PDF Full-text" link, and use the free Adobe Reader to open them.