268 Results Found

In this study, we report the synthesis of ZnO nanoparticles from Zn dross via hydrometallurgical method by using acetic acid as a leaching agent. D205 dye molecules were then adsorbed onto Zn dross originated ZnO nanoparticle film. The optical absorp...

Infrared detection technology has important applications in laser ranging, imaging, night vision, and other fields. Furthermore, recent studies have proven that hot carriers which are generated by surface plasmon decay can be exploited for photodetec...

The increasing interest in two-dimensional materials with unique crystal structures and novel band characteristics has provided numerous new strategies and paradigms in the field of photodetection. However, as the demand for wide-spectrum detection i...

Artificial heterostructures are typically created by layering distinct materials, thereby giving rise to unique characteristics different from their individual components. Herein, two-dimensional α-MnSe nanosheets with a non-layered structure w...

Photodetection based on assemblies of quantum dots (QDs) is able to tie the advantages of both the conventional photodetector and unique electronic properties of zero-dimensional structures in an unprecedented way. However, the biggest drawback of QD...

UV sensors hold significant promise for various applications in both military and civilian domains. However, achieving exceptional detectivity, responsivity, and rapid rise/decay times remains a notable challenge. In this study, we address this chall...

Herein, we successfully fabricated an Al-doped α-Ga2O3 nanorod array on FTO using the hydrothermal and post-annealing processes. To the best of our knowledge, it is the first time that an Al-doped α-Ga2O3 nanorod array on FTO has been rea...

The infrared technology is entering widespread use as it starts fulfilling a growing number of emerging applications, such as smart buildings and automotive sectors. Majority of infrared photodetectors are based on interband transition, which is the...

Two-dimensional (2D) ZnO inverse opal (IO) films were fabricated by co-assembly of sacrificed polystyrene (PS) microspheres and citric acid/zinc acetate (CA/ZA) aqueous solution at an oil–water interface followed by calcination. Their morphologies co...

Layered transition metals dichalcogenides such as MoS2 and WS2 have shown a tunable bandgap, making them highly desirable for optoelectronic applications. Here, we report on one-step chemical vapor deposited MoS2, WS2 and MoxW1-xS2 heterostructures i...

Due to their unique tubular and spiral structure, graphene and graphene oxide nanoscrolls (GONS) have shown extensive applications in various fields. However, it is still a challenge to improve the optoelectronic application of graphene and GONS beca...

The ultra-wide bandgap (~6.2 eV), thermal stability and radiation tolerance of AlN make it an ideal choice for preparation of high-performance far-ultraviolet photodetectors (FUV PDs). However, the challenge of epitaxial crack-free AlN single-crystal...

We report on the near-infrared (NIR) photoresponse of a micropatterned Ge/Si quantum dot (QD) pin photodiode at different angles of radiation incidence. The photon-trapping hole array was etched through the n+-type top contact layer to reach the buri...

Direct ink-jet printing of a zinc-oxide-based thin-film transistor (ZnO-based TFT) with a three-dimensional (3-D) channel structure was demonstrated for ultraviolet light (UV) and visible light photodetection. Here, we demonstrated the channel struct...

Polycrystalline lead selenide material that is processed after a sensitization technology offers the additional physical effects of carrier recombination suppression and carrier transport manipulation, making it sufficiently sensitive to mid-infrared...

The excellent performance of semiconductor nanocrystals as sensitizers for photothermal therapy (PTT) has attracted the attention of many researchers; however, they are hindered by limited bandwidth and complex synthesis. To overcome these limitation...

Infrared photodetectors are gaining remarkable interest due to their widespread civil and military applications. Low-dimensional materials such as quantum dots, nanowires, and two-dimensional nanolayers are extensively employed for detecting ultravio...

Tin disulfide has substantial importance for two-dimensional material-based optoelectronics and sensors due to its unique optoelectrical properties. In this report, we fabricate SnS2 nanosheets using the low-pressure thermal sulfurization process, wh...

We present a low-noise photodetector based on van der Waals stacked black phosphorus (BP)/boron nitride (h-BN)/graphene tunneling junctions. h-BN acts as a tunneling barrier that significantly blocks dark current fluctuations induced by shallow trap...

With the rapid development of high-speed imaging, aerospace, and telecommunications, high-performance photodetectors across a broadband spectrum are urgently demanded. Due to abundant surface configurations and exceptional electronic properties, two-...

Transition metal dichalcogenide (TMD) materials have demonstrated promising potential for applications in photodetection due to their tunable bandgaps, high carrier mobility, and strong light absorption capabilities. However, limited by their intrins...

Type II vertical heterojunction is a good solution for long-wavelength light detection. Here, we report a rhenium selenide/molybdenum telluride (n-ReSe2/p-MoTe2) photodetector for high-performance photodetection in the broadband spectral range of 405...

An infrared photodetector is a critical component that detects, identifies, and tracks complex targets in a detection system. Infrared photodetectors based on 3D bulk materials are widely applied in national defense, military, communications, and ast...

Generally, the responsivities of hot-electron photodetectors (HE PDs) are mainly dependent on the device working wavelengths. Therefore, a common approach to altering device responsivities is to change the working wavelengths. Another strategy for ma...

Ultraviolet photodetectors have been widely utilized in several applications, such as advanced communication, ozone sensing, air purification, flame detection, etc. Gallium nitride and its compound semiconductors have been promising candidates in pho...

Plasmonic photodetection based on the hot-electron generation in nanostructures is a promising strategy for sub-band detection due to the high conversion efficiencies; however, it is plagued with the high dark current. In this paper, we have demonstr...

Graphene-based photodetection (PD) devices have been broadly studied for their broadband absorption, high carrier mobility, and mechanical flexibility. Owing to graphene’s low optical absorption, the research on graphene-based PD devices so far...

Harvesting energetic carriers from plasmonic resonance has been a hot topic in the field of photodetection in the last decade. By interfacing a plasmonic metal with a semiconductor, the photoelectric conversion mechanism, based on hot carrier emissio...

This paper proposes a neural stimulation device integrated with a silicon nanowire (SiNW)-based photodetection circuit for the activation of neurons with light. The proposed device is comprised of a voltage divider and a current driver in which SiNWs...

Gallium oxide (Ga2O3), an ultrawide bandgap semiconductor, is an ideal material for solar-blind photodetectors, but challenges such as low responsivity and response speed persist. In this paper, one-dimensional (1D) Ga2O3 nanorods were designed to ac...

Bismuth-based compounds have been regarded as a kind of promising material due to their narrow bandgap, high carrier mobility, low toxicity, and strong oxidation ability, showing potential applications in the field of photoelectrochemical (PEC) activ...

The near-infrared photodetection of monolayer MoS2 can be achieved using upconverted nanoparticles (UCNPs). Herein, we demonstrated that gold nanorods (Au NRs) further enhanced the near-infrared photoresponsivity of a hybrid device via the surface pl...

Self-powered photoelectrochemical (PEC) ultraviolet photodetectors (UVPDs) are promising for next-generation energy-saving and highly integrated optoelectronic systems. Constructing a heterojunction is an effective strategy to increase the photodetec...

Since photodetectors are widely used in a variety of applications, such as imaging, optical communication, security and safety, motion detection, environmental sensing, and more, they are a crucial part of many technologies. The performance of photod...

Two-dimensional (2D) MoS2 has recently become of interest for applications in broad range photodetection due to their tunable bandgap. In order to develop 2D MoS2 photodetectors with ultrafast response and high responsivity, up-scalable techniques fo...

Photodetectors that can operate over a wide range of temperatures, from cryogenic to elevated temperatures, are crucial for a variety of modern scientific fields, including aerospace, high-energy science, and astro-particle science. In this study, we...

Hot-electron photodetectors (HEPDs) are triggering a strong surge of interest in applications of image sensors and optics communication, since they can realize photoelectric responses when the incident photon energy is lower than the bandwidth of the...

Recently, the utilization of metal halide perovskites in sensing and their application in environmental studies have reached a new height. Among the different metal halide perovskites, cesium lead halide perovskites (CsPbX3; X = Cl, Br, and I) and co...

In recent years, lead selenide (PbSe) has gained considerable attention for its potential applications in optoelectronic devices. However, there are still some challenges in realizing mid-infrared detection applications with single PbSe film at room...

To develop and design an environmentally friendly, low-cost shortwave infrared (SWIR) photodetector (PD) material and extend the optical response cutoff wavelengths of existing silicon photodetectors beyond 1100 nm, high-performance silicon-compatibl...

Hexagonal boron nitride (hBN) is a promising material for vacuum ultraviolet (VUV) photodetection, owing to its ultra-wide bandgap and cost-effective synthesis. In this work, 2-inch high-quality hBN films were successfully deposited by magnetron sput...

The graphene adjustable-barriers phototransistor is an attractive novel device for potential high speed and high responsivity dual-band photodetection. In this device, graphene is embedded between the semiconductors silicon and germanium. Both n-type...

Polarization-sensitive photodetection is critical for advanced optical systems, yet achieving simultaneous high-fidelity recognition of the circularly polarized (CP) and linearly polarized (LP) light with compact designs remains challenging. Here, we...

Two-dimensional (2D) transition metal dichalcogenides (TMDCs) nanosheets have shown extensive applications due to their excellent physical and chemical properties. However, the low light absorption efficiency limits their application in optoelectroni...

Perovskite-based metal oxide phototransistors have emerged as promising photodetection devices owing to the superior optoelectronic properties of perovskite materials and the high carrier mobility of metal oxides. However, high dark current has been...

Two-dimensional (2D) materials have revolutionized the field of optoelectronics by offering exceptional properties such as atomically thin structures, high carrier mobility, tunable bandgaps, and strong light–matter interactions. These attribut...

Glancing angle deposition (GLAD) is a unique physical vapor deposition technique to enable wafer-scale production of close-packed nanopillar arrays (NaPAs) made of a wide range of inorganic and organic materials and engineerable structures, offering...

Group-IV photonic devices that contain Si and Ge are very attractive due to their compatibility with integrated silicon photonics platforms. Despite the recent progress in fabrication of Ge/Si quantum dot (QD) photodetectors, their low quantum effici...

Different materials are studied for environmental gas sensors as well as photodetection prototypes. A ZnO/MoS2 p-n junction was synthetized to act as a multifunctional sensor prototype. After the ZnO was prepared on a silicon substrate by using DC sp...

We investigated characteristics of highly flexible and stretchable electrodes consisting of Galinstan (i.e., a gallium-based liquid metal alloy) under various conditions including sub-zero temperature (i.e., <0 °C) and demonstrated solar-blind pho...