Molecular Beam Epitaxy Growth of Quantum Wires and Quantum Dots

Dear Colleagues,

Molecular beam epitaxy technology has a good advantage in semiconductor technology due to its strong controllability, especially for the preparation of materials such as quantum wires and quantum dots. Chemical beam epitaxy (CBE), metal organic compound molecular beam epitaxy (MOMBE), and laser molecular beam epitaxy (L-MBE) developed by combining molecular beam epitaxy with pulsed lasers and other related technology developments have allowed the preparation of new types of quantum wires, quantum dots materials have become more diversified, and the development prospect of combining laser and molecular beam epitaxy technology has greatly aroused the interest of researchers. Meanwhile, the prepared quantum wires and quantum dots are important applications in ultrafast optics, energy, micro–nano optoelectronic devices, etc. In this Special Issue, we are interested in the articles that share the latest developments and achievements in the application of quantum dots and quantum wires in combination with molecular beam epitaxy and lasers, and the applications of quantum dots and quantum wires in ultrafast optics, micro–nano optoelectronic devices, etc. Some potential topics include, but are not limited to:

• Advances in molecular beam epitaxy growth technology
• Advances in molecular beam epitaxy growth of quantum dots and quantum wires
• Application of quantum dots and quantum wires in ultrafast lasers
• Application of quantum dots and quantum wires in energy
• Application of quantum dots and quantum wires in micro–nano optoelectronic devices
• Application of quantum dots and quantum wires in semiconductors
• Integrations of molecular beam epitaxy growth and new technologies such as lasers
• Application of related materials (such as low-dimensional materials, transitional metal dichalcogenide)

Prof. Dr. Ziyang Zhang
Dr. Xiaohui Li
Dr. Zhao Yao
Guest Editors

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