Special Issue "Molecular Beam Epitaxy Growth of Quantum Wires and Quantum Dots"

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanocomposite Thin Films and 2D Materials".

Deadline for manuscript submissions: 30 June 2022 | Viewed by 2432

Special Issue Editors

Prof. Dr. Ziyang Zhang
E-Mail Website
Guest Editor
School of Electronic and Information, Qingdao University, Qingdao 266071, China
Interests: low dimensional III-V semiconductor materials and devices especially on quantum well/wire/dot lasers; ultrafast lasers; superluminescent diodes and photodetectors; optoelectronic materials and devices; photonic integrated circuits and devices
Dr. Xiaohui Li
E-Mail Website
Guest Editor
School of Physics and Information Technology, Shanxi Normal University, Xi’an 710062, China
Interests: laser; photonics; fiber optics; fiber optic technology; nonlinear optics; optics and lasers; optoelectronics; laser technology; femtosecond lasers; optical fibers; nonlinear optics of low dementional materials and quatum dot materials
Dr. Zhao Yao
E-Mail Website
Assistant Guest Editor
College of Micro-Nano Technology, School of Electronic and Information, Qingdao University, Qingdao 266071, China
Interests: molecular beam epitaxy; quantum dots; quantum wires; optoelectronic devices; photodiodes

Special Issue Information

Dear Colleagues,

Molecular beam epitaxy technology has a good advantage in semiconductor technology due to its strong controllability, especially for the preparation of materials such as quantum wires and quantum dots. Chemical beam epitaxy (CBE), metal organic compound molecular beam epitaxy (MOMBE), and laser molecular beam epitaxy (L-MBE) developed by combining molecular beam epitaxy with pulsed lasers and other related technology developments have allowed the preparation of new types of quantum wires, quantum dots materials have become more diversified, and the development prospect of combining laser and molecular beam epitaxy technology has greatly aroused the interest of researchers. Meanwhile, the prepared quantum wires and quantum dots are important applications in ultrafast optics, energy, micro–nano optoelectronic devices, etc. In this Special Issue, we are interested in the articles that share the latest developments and achievements in the application of quantum dots and quantum wires in combination with molecular beam epitaxy and lasers, and the applications of quantum dots and quantum wires in ultrafast optics, micro–nano optoelectronic devices, etc. Some potential topics include, but are not limited to:

  • Advances in molecular beam epitaxy growth technology
  • Advances in molecular beam epitaxy growth of quantum dots and quantum wires
  • Application of quantum dots and quantum wires in ultrafast lasers
  • Application of quantum dots and quantum wires in energy
  • Application of quantum dots and quantum wires in micro–nano optoelectronic devices
  • Application of quantum dots and quantum wires in semiconductors
  • Integrations of molecular beam epitaxy growth and new technologies such as lasers
  • Application of related materials (such as low-dimensional materials, transitional metal dichalcogenide)

Prof. Dr. Ziyang Zhang
Dr. Xiaohui Li
Dr. Zhao Yao
Guest Editors

Manuscript Submission Information

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Keywords

  • molecular beam epitaxy
  • quantum dots
  • quantum wires
  • optoelectronic devices
  • ultrafast optics
  • laser diodes
  • photodiodes
  • Van der Waals heterostructures

Published Papers (4 papers)

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Research

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Article
Broadband Quantum Dot Superluminescent Diode with Simultaneous Three-State Emission
Nanomaterials 2022, 12(9), 1431; https://doi.org/10.3390/nano12091431 - 22 Apr 2022
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Abstract
Semiconductor superluminescent light-emitting diodes (SLEDs) have emerged as ideal and vital broadband light sources with extensive applications, such as optical fiber-based sensors, biomedical sensing/imaging, wavelength-division multiplexing system testing and optoelectronic systems, etc. Self-assembled quantum dots (SAQDs) are very promising candidates for the realization [...] Read more.
Semiconductor superluminescent light-emitting diodes (SLEDs) have emerged as ideal and vital broadband light sources with extensive applications, such as optical fiber-based sensors, biomedical sensing/imaging, wavelength-division multiplexing system testing and optoelectronic systems, etc. Self-assembled quantum dots (SAQDs) are very promising candidates for the realization of broadband SLED due to their intrinsic large inhomogeneous spectral broadening. Introducing excited states (ESs) emission could further increase the spectral bandwidth. However, almost all QD-based SLEDs are limited to the ground state (GS) or GS and first excited state (ES1) emission. In this work, multiple five-QD-layer structures with large dot size inhomogeneous distribution were grown by optimizing the molecular beam epitaxy (MBE) growth conditions. Based on that, with the assistance of a carefully designed mirror-coating process to accurately control the cavity mirror loss of GS and ESs, respectively, a broadband QD-SLED with three simultaneous states of GS, ES1 and second excited-state (ES2) emission has been realized, exhibiting a large spectral width of 91 nm with a small spectral dip of 1.3 dB and a high continuous wave (CW) output power of 40 mW. These results pave the way for a new fabrication technique for high-performance QD-based low-coherent light sources. Full article
(This article belongs to the Special Issue Molecular Beam Epitaxy Growth of Quantum Wires and Quantum Dots)
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Article
Explorations on Growth of Blue-Green-Yellow-Red InGaN Quantum Dots by Plasma-Assisted Molecular Beam Epitaxy
Nanomaterials 2022, 12(5), 800; https://doi.org/10.3390/nano12050800 - 26 Feb 2022
Viewed by 443
Abstract
Self-assembled growth of blue-green-yellow-red InGaN quantum dots (QDs) on GaN templates using plasma-assisted molecular beam epitaxy were investigated. We concluded that growth conditions, including small N2 flow and high growth temperature are beneficial to the formation of InGaN QDs and improve the [...] Read more.
Self-assembled growth of blue-green-yellow-red InGaN quantum dots (QDs) on GaN templates using plasma-assisted molecular beam epitaxy were investigated. We concluded that growth conditions, including small N2 flow and high growth temperature are beneficial to the formation of InGaN QDs and improve the crystal quality. The lower In/Ga flux ratio and lower growth temperature are favorable for the formation of QDs of long emission wavelength. Moreover, the nitrogen modulation epitaxy method can extend the wavelength of QDs from green to red. As a result, visible light emissions from 460 nm to 622 nm have been achieved. Furthermore, a 505 nm green light-emitting diode (LED) based on InGaN/GaN MQDs was prepared. The LED has a low external quantum efficiency of 0.14% and shows an efficiency droop with increasing injection current. However, electroluminescence spectra exhibited a strong wavelength stability, with a negligible shift of less than 1.0 nm as injection current density increased from 8 A/cm2 to 160 A/cm2, owing to the screening of polarization-related electric field in QDs. Full article
(This article belongs to the Special Issue Molecular Beam Epitaxy Growth of Quantum Wires and Quantum Dots)
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Article
Growth Behaviors of GaN on Stripes of Patterned c-Plane GaN Substrate
Nanomaterials 2022, 12(3), 478; https://doi.org/10.3390/nano12030478 - 29 Jan 2022
Viewed by 635
Abstract
Growth behaviors of GaN on patterned GaN substrate were studied herein. Spiral and nucleation growth were observed after miscut-induced atomic steps disappeared. The morphology of nucleation growth at different temperature is explained by a multi-nucleation regime introducing critical supersaturation. Simulated results based on [...] Read more.
Growth behaviors of GaN on patterned GaN substrate were studied herein. Spiral and nucleation growth were observed after miscut-induced atomic steps disappeared. The morphology of nucleation growth at different temperature is explained by a multi-nucleation regime introducing critical supersaturation. Simulated results based on a step motion model successfully explain the growth behaviors on stripes. These findings can be applied to control the surface kinetics of devices such as laser diodes grown on patterned substrate. Full article
(This article belongs to the Special Issue Molecular Beam Epitaxy Growth of Quantum Wires and Quantum Dots)
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Review

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Review
Recent Developments of Quantum Dot Materials for High Speed and Ultrafast Lasers
Nanomaterials 2022, 12(7), 1058; https://doi.org/10.3390/nano12071058 - 24 Mar 2022
Viewed by 470
Abstract
Owing to their high integration and functionality, nanometer-scale optoelectronic devices based on III-V semiconductor materials are emerging as an enabling technology for fiber-optic communication applications. Semiconductor quantum dots (QDs) with the three-dimensional carrier confinement offer potential advantages to such optoelectronic devices in terms [...] Read more.
Owing to their high integration and functionality, nanometer-scale optoelectronic devices based on III-V semiconductor materials are emerging as an enabling technology for fiber-optic communication applications. Semiconductor quantum dots (QDs) with the three-dimensional carrier confinement offer potential advantages to such optoelectronic devices in terms of high modulation bandwidth, low threshold current density, temperature insensitivity, reduced saturation fluence, and wavelength flexibility. In this paper, we review the development of the molecular beam epitaxial (MBE) growth methods, material properties, and device characteristics of semiconductor QDs. Two kinds of III-V QD-based lasers for optical communication are summarized: one is the active electrical pumped lasers, such as the Fabry–Perot lasers, the distributed feedback lasers, and the vertical cavity surface emitting lasers, and the other is the passive lasers and the instance of the semiconductor saturable absorber mirrors mode-locked lasers. By analyzing the pros and cons of the different QD lasers by their structures, mechanisms, and performance, the challenges that arise when using these devices for the applications of fiber-optic communication have been presented. Full article
(This article belongs to the Special Issue Molecular Beam Epitaxy Growth of Quantum Wires and Quantum Dots)
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