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Optoelectronic Devices and Sensors

A special issue of Sensors (ISSN 1424-8220). This special issue belongs to the section "Physical Sensors".

Deadline for manuscript submissions: 20 January 2026 | Viewed by 911

Special Issue Editor

Special Issue Information

Dear Colleagues,

The field of optoelectronic devices, which involves the conversion of electrical to optical or optical to electrical signals, is advancing at a rapid pace, bringing about significant advancements in science and industry. As we continue to strive towards overcoming performance limitations in these devices, the development and exploration of advanced and emerging materials play a crucial role in driving progress.

With this in mind, we are pleased to announce the Special Issue on “Optoelectronic Devices and Sensors” that aims to showcase the latest advancements, challenges, and opportunities in the realm of materials for state-of-the-art optoelectronic devices. This Special Issue covers a broad range of topics including optoelectronic devices, nanophotonics, plasmonics, metamaterials, and spin- and chiral-optoelectronic materials and devices. Special attention will be paid to the study of epitaxial growth modes of monolayer-thick (Al,Ga)N nanoheterostructures, charge carrier localization effects, and the exciton nature of luminescence in such quantum-sized structures. We welcome contributions from both experimental and theoretical perspectives.

However, please note that this Special Issue is not limited to the aforementioned topics, and we encourage submissions related to other relevant aspects as well.

We invite you to submit to this exciting Special Issue your full papers, reviews, or communications that focus on emerging materials for optoelectronics and their device applications.

Prof. Dr. Liang-Wen Ji
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Sensors is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • optoelectronics
  • thin films
  • gas sensors
  • microelectronics
  • photodetectors
  • nanophotonics
  • AlGaN-based nanoheterostructures

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Published Papers (1 paper)

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Research

19 pages, 3429 KiB  
Article
Flexible Solar-Blind Ultraviolet Photodetector Based on β-Ga2O3 Nanowire Channel Bridge Structure: Combining High Responsivity and Strain Stability
by Jinyun Liu, Tengfei Ma, Huihui Tian, Wuxu Zhang, Zhaopeng Liu, Zhiyi Gao, Baoru Bian, Yuanzhao Wu, Yiwei Liu, Jie Shang and Run-Wei Li
Sensors 2025, 25(5), 1563; https://doi.org/10.3390/s25051563 - 4 Mar 2025
Viewed by 361
Abstract
Solar-blind ultraviolet photodetectors are gaining attention for their high signal-to-noise ratio and strong anti-interference capabilities. With the rising demand for applications in high-strain environments, such as fire rescue robots and smart firefighting suits, a flexible photodetector that maintains stable performance under bending strain [...] Read more.
Solar-blind ultraviolet photodetectors are gaining attention for their high signal-to-noise ratio and strong anti-interference capabilities. With the rising demand for applications in high-strain environments, such as fire rescue robots and smart firefighting suits, a flexible photodetector that maintains stable performance under bending strain is needed. Current devices struggle to balance strain cycle stability and responsivity. This paper presents a β-Ga2O3 nanowire photodetector on a flexible ultra-thin silicon substrate, fabricated using microchannel engraving and chemical vapor deposition. The device achieves a responsivity of 266 mA W−1 without strain, with less than 5.5% variation in photogenerated current under bending strain (0–60°), and a response time of 360 ms. After 500 cycles of 60° bending, the photogenerated current changes by only 1.5%, demonstrating excellent stability and responsivity, with broad application potential in flame detection and biological sensing. Full article
(This article belongs to the Special Issue Optoelectronic Devices and Sensors)
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