Next Article in Journal
Effects of Printing Parameters on the Fit of Implant-Supported 3D Printing Resin Prosthetics
Previous Article in Journal
On the Microstructure and Isothermal Oxidation at 800, 1200, and 1300 °C of the Al-25.5Nb-6Cr-0.5Hf (at %) Alloy
Article Menu

Export Article

Open AccessArticle

Low-Noise Mid-Infrared Photodetection in BP/h-BN/Graphene van der Waals Heterojunctions

1,2,†, 2,†, 1,*, 1,*, 1 and 1
1
Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi’an 710071, China
2
School of Electronic Science and Engineering, Nanjing University, 163 Xianlin Ave, Nanjing 210023, China
*
Authors to whom correspondence should be addressed.
These authors contributed equally to this work.
Materials 2019, 12(16), 2532; https://doi.org/10.3390/ma12162532
Received: 18 July 2019 / Revised: 6 August 2019 / Accepted: 7 August 2019 / Published: 9 August 2019
  |  
PDF [2233 KB, uploaded 9 August 2019]
  |  

Abstract

We present a low-noise photodetector based on van der Waals stacked black phosphorus (BP)/boron nitride (h-BN)/graphene tunneling junctions. h-BN acts as a tunneling barrier that significantly blocks dark current fluctuations induced by shallow trap centers in BP. The device provides a high photodetection performance at mid-infrared (mid-IR) wavelengths. While it was found that the photoresponsivity is similar to that in a BP photo-transistor, the noise equivalent power and thus the specific detectivity are nearly two orders of magnitude better. These exemplify an attractive platform for practical applications of long wavelength photodetection, as well as provide a new strategy for controlling flicker noise. View Full-Text
Keywords: low noise; mid-infrared; tunneling; heterojunction low noise; mid-infrared; tunneling; heterojunction
Figures

Figure 1

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).

Supplementary material

SciFeed

Share & Cite This Article

MDPI and ACS Style

Lu, Q.; Yu, L.; Liu, Y.; Zhang, J.; Han, G.; Hao, Y. Low-Noise Mid-Infrared Photodetection in BP/h-BN/Graphene van der Waals Heterojunctions. Materials 2019, 12, 2532.

Show more citation formats Show less citations formats

Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Related Articles

Article Metrics

Article Access Statistics

1

Comments

[Return to top]
Materials EISSN 1996-1944 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top