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Low-Noise Mid-Infrared Photodetection in BP/h-BN/Graphene van der Waals Heterojunctions

1,2,†, 2,†, 1,*, 1,*, 1 and 1
Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi’an 710071, China
School of Electronic Science and Engineering, Nanjing University, 163 Xianlin Ave, Nanjing 210023, China
Authors to whom correspondence should be addressed.
These authors contributed equally to this work.
Materials 2019, 12(16), 2532;
Received: 18 July 2019 / Revised: 6 August 2019 / Accepted: 7 August 2019 / Published: 9 August 2019
PDF [2233 KB, uploaded 9 August 2019]


We present a low-noise photodetector based on van der Waals stacked black phosphorus (BP)/boron nitride (h-BN)/graphene tunneling junctions. h-BN acts as a tunneling barrier that significantly blocks dark current fluctuations induced by shallow trap centers in BP. The device provides a high photodetection performance at mid-infrared (mid-IR) wavelengths. While it was found that the photoresponsivity is similar to that in a BP photo-transistor, the noise equivalent power and thus the specific detectivity are nearly two orders of magnitude better. These exemplify an attractive platform for practical applications of long wavelength photodetection, as well as provide a new strategy for controlling flicker noise. View Full-Text
Keywords: low noise; mid-infrared; tunneling; heterojunction low noise; mid-infrared; tunneling; heterojunction

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Lu, Q.; Yu, L.; Liu, Y.; Zhang, J.; Han, G.; Hao, Y. Low-Noise Mid-Infrared Photodetection in BP/h-BN/Graphene van der Waals Heterojunctions. Materials 2019, 12, 2532.

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