40 Results Found

Resistive random access memory (RRAM) is one of the most promising new nonvolatile memories because of its excellent properties. Moreover, due to fast read speed and low work voltage, it is suitable for seldom-write frequent-read applications. Howeve...

Due to the difficulties associated with scaling of silicon transistors, various technologies beyond binary logic processing are actively being investigated. Ternary logic circuit implementation with carbon nanotube field effect transistors (CNTFETs)...

Radio frequency identification technology (RFID) has empowered a wide variety of automation industries. Aiming at the current light-weight RFID encryption scheme with limited information protection methods, combined with the physical unclonable funct...

The capability of multiple valued logic (MVL) circuits to achieve higher storage density when compared to that of existing binary circuits is highly impressive. Recently, MVL circuits have attracted significant attention for the design of digital sys...

The sneak path current (SPC) is the inevitable issue in crossbar memory array while implementing high-density storage configuration. The crosstalks are attracting much attention, and the read accuracy in the crossbar architecture is deteriorated by t...

Applications of neural networks have gained significant importance in embedded mobile devices and Internet of Things (IoT) nodes. In particular, convolutional neural networks have emerged as one of the most powerful techniques in computer vision, spe...

Due to a rapid increase in the amount of data, there is a huge demand for the development of new memory technologies as well as emerging computing systems for high-density memory storage and efficient computing. As the conventional transistor-based s...

Memristor devices for resistive-switching memory and artificial synapses have emerged as promising solutions for overcoming the technological challenges associated with the von Neumann bottleneck. Recently, due to their unique optoelectronic properti...

The rapid advancement of artificial intelligence (AI) technologies has significantly increased the demand for high-performance computational hardware. Memristor-based compute-in-memory (CIM) technology, also known as resistive random-access memory (R...

Resistive random access memories (RRAMs) are a type of resistive memory with two metal electrodes and a semi-insulating switching material in-between. As the persistent technology node downscaling continues in transistor technologies, RRAM designers...

Pattern recognition as a computing task is very well suited for machine learning algorithms utilizing artificial neural networks (ANNs). Computing systems using ANNs usually require some sort of data storage to store the weights and bias values for t...

In-memory computing (IMC) refers to non-von Neumann architectures where data are processed in situ within the memory by taking advantage of physical laws. Among the memory devices that have been considered for IMC, the resistive switching memory (RRA...

Emerging nonvolatile memory (eNVM) devices are pushing the limits of emerging applications beyond the scope of silicon-based complementary metal oxide semiconductors (CMOS). Among several alternatives, phase change memory, spin-transfer torque random...

Resistive random-access memory has emerged as a promising non-volatile memory technology, receiving substantial attention due to its potential for high operational performance, low power consumption, temperature robustness, and scalability. Two-dimen...

Resistive random access memory (RRAM), which is considered as one of the most promising next-generation non-volatile memory (NVM) devices and a representative of memristor technologies, demonstrated great potential in acting as an artificial synapse...

The ubiquitous use of critical and private data in electronic format requires reliable and secure embedded systems for IoT devices. In this context, RRAMs (Resistive Random Access Memories) arises as a promising alternative to replace current memory...

We investigated the thermal stability of a 1Mbit OxRRAM array embedded in 28 nm COMS technology. A back-end-of-line (BEOL) solution with a TaN–Ta interfacial layer was proposed to eliminate the failure rate after reflow soldering assembly at 26...

This brief presents an analog front-end (AFE) for the detection of electroencephalogram (EEG) signals. The AFE is composed of four sections, chopper-stabilized amplifiers, ripple suppression circuit, RRAM-based lowpass FIR filter, and 8-bit SAR ADC....

In this study, the hopping conduction distance and bipolar switching properties of the Gd:SiOx thin film by (radio frequency, rf) rf sputtering technology for applications in RRAM devices were calculated and investigated. To discuss and verify the el...

In this work, we present an integrated read and programming circuit for Resistive Random Access Memory (RRAM) cells. Since there are a lot of different RRAM technologies in research and the process variations of this new memory technology often sprea...

Logic-in-memory (LIM) circuits based on the material implication logic (IMPLY) and resistive random access memory (RRAM) technologies are a candidate solution for the development of ultra-low power non-von Neumann computing architectures. Such archit...

In this paper, an overview of the influence of various modifications on ZnO-based RRAM has been conducted. Firstly, the motivation for creating new memory technology is presented. The resistive switching mechanism is explained, including its response...

Resistive Random Access Memories (RRAMs) are based on resistive switching (RS) operation and exhibit a set of technological features that make them ideal candidates for applications related to non-volatile memories, neuromorphic computing and hardwar...

State-of-the-art IoT technologies request novel design solutions in edge computing, resulting in even more portable and energy-efficient hardware for in-the-field processing tasks. Vision sensors, processors, and hardware accelerators are among the m...

Combining the advantages of low-power consumption of static random access memory (SRAM) with high stability and nonvolatile of resistive memory (RRAM), an improved 8T2R nonvolatile SRAM (nvSRAM) memory cell was proposed in this paper. In order to sol...

In this paper, the modulation of the conductance levels of resistive random access memory (RRAM) devices is used for the generation of random numbers by applying a train of RESET pulses. The influence of the pulse amplitude and width on the device re...

In an era of rapidly evolving artificial intelligence and 5G communications technologies, massive data storage and processing are required for the real-time operation of digital processors in conventional wearable devices. However, classical von-Neum...

Background: The adoption of robotic surgery has been widespread and increasing amongst gynecologic surgeons given the ability to decrease morbidity. It is important that plastic surgeons adjust their reconstructive algorithm to ascertain the benefits...

Memristor-based neuromorphic systems have been proposed as a promising alternative to von Neumann computing architectures, which are currently challenged by the ever-increasing computational power required by modern artificial intelligence (AI) algor...

Modeling in an emerging technology like RRAM devices is one of the pivotal concerns for its development. In the current bibliography, most of the models face difficulties in implementing or simulating unconventional scenarios, particularly when deali...

Using two kinds of targets (gallium and silicon dioxide) and the rf magnetron sputtering deposited technique, GdO_x:SiO₂ thin film RRAM devices were deposited on TiN/Si substrate to form a metal–insulator–metal (MIM) structure. In addition...

The data movement between the processing and storage units has been one of the most critical issues in modern computer systems. The emerging Resistive Random Access Memory (RRAM) technology has drawn tremendous attention due to its non-volatile abili...

In order to improve the electrical performance of resistive random access memory (RRAM), sulfur (S)-doping technology for HfOx-based RRAM is systematically investigated in this paper. HfOx films with different S-doping contents are achieved by atmosp...

Resistive switching (RS) phenomena are nowadays one of the most studied topics in the area of microelectronics. It can be observed in Metal–Insulator–Metal (MIM) structures that are the basis of resistive switching random-access memories...

Conventional sense amplifiers limit the performance of current RRAM computing-in-memory (CIM) macro circuits, resulting in high latency and energy consumption. This paper introduces a multi-bit quantization technology low-latency voltage sense amplif...

A new stochastic process was developed by considering the internal performance of macro-states in which the sojourn time in each one is phase-type distributed depending on time. The stationary distribution was calculated through matrix-algorithmic me...

This paper proposes a symmetric eight transistor-three-memristor (8T3R) non-volatile static random-access memory (NVSRAM) cell. Non-volatile operation is achieved through the use of a memristor element, which stores data in the form of its resistive...

Different in-memory computing paradigms enabled by emerging non-volatile memory technologies are promising solutions for the development of ultra-low-power hardware for edge computing. Among these, SIMPLY, a smart logic-in-memory architecture, provid...

As the CMOS technology approaches its physical and economic limits, further advancement of Moore’s Law for enhanced computing performance can no longer rely solely on smaller transistors and higher integration density. Instead, the computing la...

Several promising non-volatile memories (NVMs) such as magnetic RAM (MRAM), spin-transfer torque RAM (STTRAM), ferroelectric RAM (FeRAM), resistive RAM (RRAM), and phase-change memory (PCM) are being investigated to keep the static leakage within a t...