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Article

A Versatile, Voltage-Pulse Based Read and Programming Circuit for Multi-Level RRAM Cells

1
Chair of Communications Electronics of University of Bayreuth, 95447 Bayreuth, Germany
2
Institute for Electronics Engineering, Friedrich-Alexander University Erlangen-Nuernberg, 91058 Erlangen, Germany
3
IHP-Leibniz Institut fuer innovative Mikroelektronik, 15236 Frankfurt (Oder), Germany
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Chair of Computer Science 3 (Computer Architecture), Friedrich-Alexander University Erlangen-Nuernberg, 91058 Erlangen, Germany
5
BTU Cottbus-Senftenberg, 03046 Cottbus, Germany
*
Author to whom correspondence should be addressed.
Academic Editor: Je-Hyeong Bahk
Electronics 2021, 10(5), 530; https://doi.org/10.3390/electronics10050530
Received: 20 January 2021 / Revised: 16 February 2021 / Accepted: 19 February 2021 / Published: 24 February 2021
(This article belongs to the Section Microelectronics)
In this work, we present an integrated read and programming circuit for Resistive Random Access Memory (RRAM) cells. Since there are a lot of different RRAM technologies in research and the process variations of this new memory technology often spread over a wide range of electrical properties, the proposed circuit focuses on versatility in order to be adaptable to different cell properties. The circuit is suitable for both read and programming operations based on voltage pulses of flexible length and height. The implemented read method is based on evaluating the voltage drop over a measurement resistor and can distinguish up to eight different states, which are coded in binary, thereby realizing a digitization of the analog memory value. The circuit was fabricated in the 130 nm CMOS process line of IHP. The simulations were done using a physics-based, multi-level RRAM model. The measurement results prove the functionality of the read circuit and the programming system and demonstrate that the read system can distinguish up to eight different states with an overall resistance ratio of 7.9. View Full-Text
Keywords: analog circuit; memory programming; programming circuit; read circuit; resistive memory; RRAM; voltage pulse analog circuit; memory programming; programming circuit; read circuit; resistive memory; RRAM; voltage pulse
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MDPI and ACS Style

Pechmann, S.; Mai, T.; Völkel, M.; Mahadevaiah, M.K.; Perez, E.; Perez-Bosch Quesada, E.; Reichenbach, M.; Wenger, C.; Hagelauer, A. A Versatile, Voltage-Pulse Based Read and Programming Circuit for Multi-Level RRAM Cells. Electronics 2021, 10, 530. https://doi.org/10.3390/electronics10050530

AMA Style

Pechmann S, Mai T, Völkel M, Mahadevaiah MK, Perez E, Perez-Bosch Quesada E, Reichenbach M, Wenger C, Hagelauer A. A Versatile, Voltage-Pulse Based Read and Programming Circuit for Multi-Level RRAM Cells. Electronics. 2021; 10(5):530. https://doi.org/10.3390/electronics10050530

Chicago/Turabian Style

Pechmann, Stefan, Timo Mai, Matthias Völkel, Mamathamba K. Mahadevaiah, Eduardo Perez, Emilio Perez-Bosch Quesada, Marc Reichenbach, Christian Wenger, and Amelie Hagelauer. 2021. "A Versatile, Voltage-Pulse Based Read and Programming Circuit for Multi-Level RRAM Cells" Electronics 10, no. 5: 530. https://doi.org/10.3390/electronics10050530

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