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Open AccessArticle

Schottky Emission Distance and Barrier Height Properties of Bipolar Switching Gd:SiOx RRAM Devices under Different Oxygen Concentration Environments

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Department of Electrical Engineering and Computer Science, Tung Fang Design University, Kaohsiung 829, Taiwan
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Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung 829, Taiwan
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Department of Electronic Engineering, Southern Taiwan University of Science and Technology, Tainan 710, Taiwan
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Department of Tourism and Leisure Management, Tung Fang Design University, Kaohsiung 829, Taiwan
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Department of Mechanical and Electro-Mechanical Engineering, National Sun Yat-Sen University, Kaohsiung 829, Taiwan
*
Authors to whom correspondence should be addressed.
Materials 2018, 11(1), 43; https://doi.org/10.3390/ma11010043
Received: 5 November 2017 / Revised: 15 December 2017 / Accepted: 22 December 2017 / Published: 28 December 2017
(This article belongs to the Special Issue Stretchable and Flexible Electronic Materials & Devices)
In this study, the hopping conduction distance and bipolar switching properties of the Gd:SiOx thin film by (radio frequency, rf) rf sputtering technology for applications in RRAM devices were calculated and investigated. To discuss and verify the electrical switching mechanism in various different constant compliance currents, the typical current versus applied voltage (I-V) characteristics of gadolinium oxide RRAM devices was transferred and fitted. Finally, the transmission electrons’ switching behavior between the TiN bottom electrode and Pt top electrode in the initial metallic filament forming process of the gadolinium oxide thin film RRAM devices for low resistance state (LRS)/high resistance state (HRS) was described and explained in a simulated physical diagram model. View Full-Text
Keywords: nonvolatile memory; gadolinium; RRAM; resistive switching; silicon oxide nonvolatile memory; gadolinium; RRAM; resistive switching; silicon oxide
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MDPI and ACS Style

Chen, K.-H.; Tsai, T.-M.; Cheng, C.-M.; Huang, S.-J.; Chang, K.-C.; Liang, S.-P.; Young, T.-F. Schottky Emission Distance and Barrier Height Properties of Bipolar Switching Gd:SiOx RRAM Devices under Different Oxygen Concentration Environments. Materials 2018, 11, 43.

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