164 Results Found

This study presents the optimization of the lateral device geometry and thickness of the channel and barrier layers of AlGaN/GaN high electron mobility transistors (HEMTs) for the enhancement of breakdown voltage (VBR) characteristics using a TCAD si...

In this paper, a novel ring-gate structure AlGaN/GaN HEMT device is proposed and fabricated successfully. When the gate-source spacing Lgs = 5 μm, gate-drain spacing Lgd = 7 μm, gate length Lg = 3 μm, the maximum drain current Idmax of this...

In this letter, a novel approach is presented to overcome issues in AlGaN/GaN high electron mobility transistors (HEMTs), such as metal discontinuity of the gate stemmed from conventional mesa isolation. This usually requires a careful mesa etch proc...

A differential analysis of electrical attributes, including the temperature profile and trapping phenomena is introduced using a device analytical spatial electrical model. The resultant current difference caused by the applied voltage variation is d...

In this work, we present an analytical model of dynamic power losses for enhancement-mode AlGaN/GaN high-electron-mobility transistor power devices (eGaN HEMTs). To build this new model, the dynamic on-resistance (Rdson) is first accurately extracted...

GaN-based high electron mobility transistors offer high carrier density combined with high electron mobility and often require operation at high frequencies, voltages, and temperatures. The device may be under high temperature and high voltage at the...

In this study, AlGaN/GaN high electron mobility transistors (HEMTs) with AlGaN back barriers (B.B.) were comprehensively investigated based on the different Al mole fractions and thicknesses in the design of the experiments. It was shown that the off...

In the current study, the effects of cracks in source field plates (SFPs) on the electrical performance of AlGaN/GaN high electron mobility transistors (HEMTs) are investigated systematically using numerical simulation. In detail, the influence of cr...

We fabricated and characterized AlGaN/GaN high-electron mobility transistors (HEMTs) with a nano-sized in situ cap layer (one is a silicon carbon nitride (SiCN) layer, and the other is a silicon nitride (SiN) layer) comparing to the conventional devi...

The electrical and thermal characteristics of AlGaN/GaN high-electron mobility transistor (HEMT) devices with a dual-metal gate (DMG) structure are investigated by electrothermal simulation and compared with those of conventional single-metal gate (S...

We investigated the effects of GaN buffer resistance of AlGaN/GaN high-electron-mobility transistors (HEMTs) on direct current (DC), low-frequency noise (LFN), and pulsed I-V characterization performances. The devices with the highest GaN buffer resi...

We investigated the effects of in situ silicon carbon nitride (SiCN) cap layer of AlGaN/GaN high-electron mobility transistors (HEMTs) on DC, capacitance-voltage (C-V) and low-frequency noise (LFN). The proposed device with SiCN cap layer exhibited e...

With the development of energy efficiency technologies such as 5G communication and electric vehicles, Si-based GaN microelectronics has entered a stage of rapid industrialization. As a new generation of microwave and millimeter wave devices, High El...

An attractive candidate for space and aeronautic applications is the high-power and miniaturizing electric propulsion technology device, the gallium nitride high electron mobility transistor (GaN HEMT), which is representative of wide bandgap power e...

This paper presents reduced dislocation of the AlGaN/GaN heterostructure for high-voltage lateral high-electron-mobility transistor (HEMT) devices. AlGaN/GaN heterostructure was grown on sapphire substrate. Prior to the growth of the AlGaN layer, the...

Herein, the performance of AlGaN/GaN high-electron-mobility transistor (HEMT) devices fabricated on Si and sapphire substrates is investigated. The drain current of the AlGaN/GaN HEMT fabricated on sapphire and Si substrates improved from 155 and 150...

The AlInN/GaN high-electron-mobility-transistor (HEMT) indicates better performances compared with the traditional AlGaN/GaN HEMTs. The present work investigated the pH sensor functionality of an analogous HEMT AlInN/GaN device with an open gate. It...

To enhance the DC and RF performance of AlGaN/GaN HEMTs, a novel device structure was proposed and investigated through simulation. The key innovation of this new structure lies in the incorporation of an Al0.7In0.15Ga0.15N back-barrier layer and an...

In this study, we investigated the operational characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) by applying the copper-filled trench and via structures for improved heat dissipation. Therefore, we used a basic T-gate HEMT devic...

We present the mean-time-to-failure (MTTF) calculations for AlGaN/GaN high-electron-mobility transistors (HEMTs) using two independent acceleration factors. MTTF predictions are generally calculated through the Arrhenius relationship, based on channe...

The InAlN/GaN HEMT has been identified as a promising alternative to conventional AlGaN/GaN HEMT due to its enhanced polarization effect contributing to higher 2DEG in the GaN channel. However, the InAlN barrier usually suffers from high leakage and...

In this paper, a novel AlGaN/GaN HEMT structure with a P-GaN buried layer in the buffer layer and a locally doped barrier layer under the gate (PN-HEMT) is proposed to enhance its resistance to single event transient (SET) effects while also overcomi...

Nanocrystalline diamond capping layers have been demonstrated to improve thermal management for AlGaN/GaN HEMTs. To improve the RF devices, the application of the technology, the technological approaches and device characteristics of AlGaN/GaN HEMTs...

The emergence of gallium nitride high-electron-mobility transistor (GaN HEMT) devices has the potential to deliver high power and high frequency with performances surpassing mainstream silicon and other advanced semiconductor field-effect transistor...

AlGaN/GaN high-electron-mobility transistors (HEMTs) are widely used in high-frequency and high-power applications owing to the high two-dimensional electron gas (2DEG) concentration. However, the microscopic origin of the 2DEG remains unclear. This...

We report the electrical characteristics of GaN-based high electron mobility transistors (HEMTs) operated on various substrates/films. For the detailed investigation and comparison of the electrical properties of GaN-based HEMTs according to the subs...

With the growing demand for more efficient power conversion and silicon reaching its theoretical limit, wide bandgap semiconductor devices are emerging as a potential solution. For instance, Gallium Nitride (GaN)-based high-electron-mobility transist...

The sensing responses in aqueous solution of an open-gated pH sensor fabricated on an AlGaN/GaN high-electron-mobility-transistor (HEMT) structure are investigated. Under air-exposed ambient conditions, the open-gated undoped AlGaN/GaN HEMT only show...

This work investigated the effects of single stress and electro-thermo-mechanical coupling stress on the electrical properties of top-cooled enhancement mode (E-mode) Aluminium Gallium Nitride/Gallium Nitride (AlGaN/GaN) high electron mobility transi...

The AlGaN/GaN high electron mobility transistor with a step–doped channel (SDC–HEMT) is first proposed in this paper. The potential distribution and the electric field (E–field) distribution of the device are explored by the numerical approach and an...

In this study, a high-performance AlGaN/GaN high electron mobility transistor (HEMT) is presented to improve its electrical operation by employing an inner field-plate (IFP) structure. Prior to the IFP structure analysis, we compared the measured and...

AlGaN/GaN heterostructure high electron mobility transistors (HEMTs) have exceptional characteristics, but the structure-function relationship remains to be experimentally fully studied. This study presents a systematic experimental investigation of...

AlGaN/GaN high electron mobility transistors (HEMTs) are regarded as promising candidates for a 5G communication system, which demands higher frequency and power. Source/drain ohmic contact is one of the key fabrication processes crucial to the devic...

In this paper, AlGaN/GaN high electron mobility transistors (HEMTs) with different thicknesses of unintentional doping GaN (UID-GaN) channels were compared and discussed. In order to discuss the effect of different thicknesses of the UID-GaN layer on...

In this paper, AlGaN/GaN high electron mobility transistors (HEMTs) with etched-fin gate structures fabricated to improve device linearity for Ka-band application are reported. Within the proposed study of planar, one-etched-fin, four-etched-fin, and...

The high transport characteristics of AlGaN/GaN heterostructures are critical components for high-performance electronic and radio-frequency (RF) devices. We report the transport characteristics of AlGaN/GaN heterostructures grown on a high-resistivi...

GaN based high electron mobility transistors (HEMTs) have demonstrated extraordinary features in the applications of high power and high frequency devices. In this paper, we review recent progress in AlGaN/GaN HEMTs, including the following sections....

GaN high-electron-mobility transistors (HEMTs) have attracted widespread attention for high-power microwave applications, owing to their superior properties. However, the charge trapping effect has limitations to its performance. To study the trappin...

A 2-D simulation of off-state breakdown voltage (VBD) for AlGaN/GaN high electron mobility transistors (HEMTs) with multi field-plates (FPs) is presented in this paper. The effect of geometrical variables of FP and insulator layer on electric field d...

Graded AlGaN channel High-Electron Mobility Transistor (HEMT) technology is emerging as a strong candidate for millimeter-wave applications, as superior efficiency and linearity performances can be achieved. In this paper, graded channel AlGaN/GaN HE...

In this paper, AlGaN/GaN high-electron-mobility transistors (HEMTs) with ohmic etching patterns (OEPs) “fabricated to improve device radio frequency (RF) performance for Ka-band applications” are reported. The fabricated AlGaN/GaN HEMTs w...

We present the mean time to failure (MTTF) of on-wafer AlGaN/GaN HEMTs under two distinct electric field stress conditions. The channel temperature (Tch) of the devices exhibits variability contingent upon the stress voltage and power dissipation, th...

We designed a high electron mobility transistor (HEMT) epitaxial structure based on an AlGaN/GaN heterojunction, utilizing Silvaco TCAD, and selected AlGaN with an aluminum composition of 0.1 as the back-barrier of the AlGaN/GaN heterojunction. We en...

Due to the complexity of the 2D coupling effects in AlGaN/GaN HEMTs, the characterization of a device’s off-state performance remains the main obstacle to exploring the device’s breakdown characteristics. To predict the off-state performa...

Recently, crack-free GaN-on-Si growth technology has become increasingly important due to the high demand for power semiconductor devices with high performances. In this paper, we have experimentally optimized the buffer structures such as the AlN nu...

In this study, an AlGaN/GaN high-electron-mobility transistor (HEMT) was grown through metal organic chemical vapor deposition on a Qromis Substrate Technology (QST). The GaN on the QST device exhibited a superior heat dissipation performance to the...

A three-dimensional thermal simulation investigation for the thermal management of GaN-on-SiC monolithic microwave integrated circuits (MMICs) of consisting multi-fingers (HEMTs) is presented. The purpose of this work is to demonstrate the utility an...

We propose a novel ultraviolet (UV) phototransistor (PT) architecture based on an AlGaN/GaN high electron mobility transistor (HEMT) with a buried p-GaN layer. In the dark, the polarization-induced two-dimensional electron gas (2DEG) at the AlGaN/GaN...

AlGaN/GaN metal-oxide semiconductor high electron mobility transistors (MOS-HEMTs) with undoped ferroelectric HfO2 have been investigated. Annealing is often a critical step for improving the quality of as-deposited amorphous gate oxides. Thermal tre...

In this paper, high-temperature storage of hydrogen-treated AlGaN/GaN HEMTs is conducted for the first time to study the effect of high temperature on the electrical characteristics of the devices after hydrogen treatment, and it is found that high-t...