This work develops a novel compact Silicon-Controlled Rectifier (SCR) model incorporating self-heating effects, extending the conventional Ebers–Moll (E–M) framework for Bipolar Junction Transistors (BJTs) by comprehensively integrating p...
The self-heating effect is a dangerous phenomenon that occurs in polymers and polymer matrix composites during their cyclic loading, and may significantly influence structural degradation and durability as a consequence. Therefore, an analysis of its...
In this paper, we investigate the effects of negative bias instability (NBTI) and self-heating effect (SHE) on threshold voltage in NSFETs. To explore accurately the interaction between SHE and NBTI, we established an NBTI simulation framework based...
This study investigates the impact of the self-heating effect (SHE) on single-event transient (SET) sensitivity in triple-layer stacked nanosheet transistors, using technology computer-aided design (TCAD) simulations. The results demonstrate that SHE...
ZnO nanowire is a promising candidate for large-area gated field emitter arrays. How to improve its temporal response is one of the key problems to be solved for applications. In this work, a device model for a gated ZnO nanowire field emitter with c...
Traditional techniques of active thermography require an external source of energy used for excitation, usually in the form of high power lamps or ultrasonic devices. In this paper, the author presents an alternative approach based on the self-heatin...
The HCI effect has been the focus of research as a common reliability consideration under advanced nodes in semiconductors. In this paper, a new compact model that takes into account the self-heating effect, width dependence, and substrate voltage de...
In this paper, degradation effects, such as self-heating effect (SHE) and drain-induced barrier lowering (DIBL) effect in 2D MoS2-based MOSFETs are investigated through simulations. The SHE is simulated based on the thermodynamic transport model. The...
As the technology nodes of semiconductor devices have become finer and more complex, progressive scaling down has been implemented to achieve higher densities for electronic devices. Thus, three-dimensional (3D) channel field-effect transistors (FETs...
The self-heating and high-power microwave (HPM) effects that can cause device heating are serious reliability issues for gallium nitride (GaN) high-electron-mobility transistors (HEMT), but the specific mechanisms are disparate. The different impacts...
The present study investigates the effects of thermal conduction and convection on self-heating temperatures and bimetallic deflections produced in doped microcantilever sensors. These cantilevers are commonly used as sensors and actuators in microsy...
This paper discusses the issue of the self-heating effect of resistance sensors during temperature measurement. The self-heating effect causes temperature measurement errors. The aim of this work was to develop a method for in situ assessment of the...
This paper describes the self-heating effects resulting from mechanical deformation in the additively manufactured aluminium alloy AlSi7Mg0.6. The material’s self-heating effect results from irreversible changes in the material’s microstr...
This study systematically investigates the effects of trap concentration on self-heating and terahertz (THz) responses in GaN HEMTs using Sentaurus TCAD. Traps, inherently unavoidable in semiconductors, can be strategically introduced to engineer spe...
The self-heating effect can be considered as a catastrophic phenomenon that occurs in polymers and polymer–matrix composites (PMCs) subjected to fatigue loading or vibrations. This phenomenon appears in the form of temperature growth in such st...
The silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistors (MOSFETs) suffer intensive self-heating effects due to the reduced thermal conductivity of the silicon layer while the feature sizes of devices scale down to the nanome...
The electrical and thermal characteristics of AlGaN/GaN high-electron mobility transistor (HEMT) devices with a dual-metal gate (DMG) structure are investigated by electrothermal simulation and compared with those of conventional single-metal gate (S...
In this paper, the impact of negative bias temperature instabilities (NBTIs) on commercial power p-channel Vertical Double-Diffused MOS (VDMOS) transistors from the standpoint of practical applications was analyzed. The effects of NBTI are one of the...
In this study, we investigated the effects of different frying conditions on the quality characteristics of fried Spanish mackerel (Scaberulous niphonius) to address the food quality degradation of self-heating fish products after frying, sterilizati...
In this study, CNTs and graphite have been incorporated to provide electrical conductivity and self-heating capacity by Joule effect to an epoxy matrix. Additionally, both types of fillers, with different morphology, surface area and aspect ratio, we...
This work is devoted to the experimental investigation of the effect of laser shock peening (LSP) on the thermo-mechanical properties of metals. ARMCO iron was chosen as the model material for the study. Samples were subjected to LSP, and were tested...
The recyclability and improved suitability for high-volume production make fiber-reinforced thermoplastic polymers (FRP) attractive alternatives for the current thermoset-based ones. However, while they are more ductile than their thermoset counterpa...
Hot carrier injection (HCI) can generate interface traps or oxide traps mainly by dissociating the Si-H or Si-O bond, thus affecting device performances such as threshold voltage and saturation current. It is one of the most significant reliability i...
Gate-All-Around (GAA) Nanosheet (NS) transistors have been identified as the device architecture for 3 nm and beyond as they provide additional scaling benefits. The Hot Carrier (HC) effect cannot be ignored in the development of metal oxide semicond...
The complementary field-effect transistor (CFET) with N-type FET (NFET) stacked on P-type FET (PFET) is a promising device structure based on gate-all-around FET (GAAFET). Because of the high-density stacked structure, the self-heating effect (SHE) b...
In this paper, a P-type GaN buried layer is introduced into the buffer layer of AlGaN/GaN HEMTs, and the effect of the P-type GaN buried layer on the device’s temperature characteristics is studied using Silvaco TCAD software. The results show...
In this study, we investigated the operational characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) by applying the copper-filled trench and via structures for improved heat dissipation. Therefore, we used a basic T-gate HEMT devic...
In this paper, an innovative vertical MOSFET based on through-oxide via (TOV) technology is proposed for silicon-on-insulator (SOI)-based monolithic 3-D ICs. The proposed vertical MOSFET is investigated numerically. It was found that SOI can effectiv...
In this paper, a comprehensive evaluation of thermal behavior of the GaN vertical n+-n−-n-n+ Gunn diode have been carried out through simulation method. We explore the complex effects of various parameters on the device thermal performance thro...
Diamond is an attractive substrate candidate for GaN high-electron-mobility transistors (HEMT) to enhance heat dissipation due to its exceptional thermal conductivity. However, the thermal boundary resistance (TBR) at the GaN–diamond interface...
In this work, the electro-thermal properties of TreeFET, which combines vertically stacked nanosheet (NS) and fin-shaped interbridge (IB) channels, are investigated in terms of interbridge width (WIB), nanosheet space (SNS) and nanosheet width (WNS)...
In this study, an electron-beam lithography system was employed to pattern 80-nm-wide and 980-nm-spaced multi-mesa-channel for fabricating AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs). Since the structure of multi...
With characteristic size scaling down to the nanoscale range, the confined geometry exacerbates the self-heating effect (SHE) in nanoscale devices. In this paper, the impact of ambient temperature (Tamb) on the SHE in stacked nanosheet transistors is...
In this work, we propose a SiC-NSFET structure that uses a PTS scheme only under the gate, with SiC layers under the source and drain, to improve the leakage current and thermal reliability. Punch-through stopper (PTS) doping is widely used to suppre...
In this work, AlGaN/GaN high-electron-mobility transistors (HEMTs) with a nanocrystalline diamond (NCD)/SiNx trench dual-passivated (TDP) structure were promoted, which demonstrated superior performance with a higher saturation output current (Idss)...
Partial cation substitution can significantly change the physical properties of parent compounds. By controlling the chemical composition and knowing the mutual relationship between composition and physical properties, it is possible to tailor the pr...
As the demand for high-frequency and high-power electronic devices has increased, gallium nitride (GaN), particularly in the context of high-electron mobility transistors (HEMTs), has attracted considerable attention. However, the ‘self-heating...
Thermal characterization of modern microwave power transistors such as high electron-mobility transistors based on gallium nitride (GaN-based HEMTs) is a critical challenge for the development of high-performance new generation wireless communication...
We report the electrical characteristics of GaN-based high electron mobility transistors (HEMTs) operated on various substrates/films. For the detailed investigation and comparison of the electrical properties of GaN-based HEMTs according to the subs...
The self-heating effects (SHEs) on the electrical characteristics of the GaN MOSFETs with a stacked TiO2/Si3N4 dual-layer insulator are investigated by using rigorous TCAD simulations. To accurately analyze them, the GaN MOSFETs with Si3N4 single-lay...
This study investigates metal-insulator-semiconductor high electron mobility transistor DC characteristics with different gate dielectric layer compositions and thicknesses, and lattice temperature effects on gate leakage current by using a two-dimen...
This paper confirms that the electrical characteristics of FinFETs such as the on/off ratio, drain-induced barrier lowering (DIBL), and sub-threshold slope (SS) can be improved by optimizing the FinFET spacer structure. An operating voltage that can...
The comminution of fuelwood for efficient transportation and handling exposes the material to various biological and chemical decomposition processes. The stockpiling of fuel chips can result in significant dry matter losses (DML) and consequent rele...
Taking into consideration the inaccurate temperature predictions in traditional thermal models of power devices, we undertook a study on the temperature rise characteristics of heterojunction bipolar transistors (HBTs) with a two-dimensional cross-se...
The electro-thermal performance of silicon nanosheet field-effect transistors (NSFETs) with various parasitic bottom transistor (trpbt)-controlling schemes is evaluated. Conventional punch-through stopper, trench inner-spacer (TIS), and bottom oxide...
The gate-all-around (GAA) nanosheet (NS) field-effect-transistor (FET) is poised to replace FinFET in the 3 nm CMOS technology node and beyond, marking the second seminal shift in device architecture across the extensive 60-plus-year history of MOSFE...
This study proposes new microcantilever designs in slotted step configuration to improve the S/N ratio of surface stress-based sensors used in physical, chemical, biochemical and biosensor applications. The cantilevers are made of silicon dioxide wit...
This work consists of the development of an easy strategy to transform any structure into an efficient surface heater by the application of a low voltage over 3D printed nanocomposite circuits. To this end, the electrical conductivity and self-heatin...
Fluids that exhibit self-rewetting properties, such as aqueous long-chain alcohol solutions, display a unique quadratic relationship between surface tension and temperature and are marked by a positive gradient. This characteristic leads to distincti...
Carbon fiber-reinforced thermoplastic (CFRT) composites have been dramatically employed in the automotive field on account of their superior performances, such as being light weight and high-strength. Self-resistance electric (SRE) heating provides a...
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