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Study on the Thermal Conductivity Characteristics for Ultra-Thin Body FD SOI MOSFETs Based on Phonon Scattering Mechanisms

1
School of Microelectronics, Xi’an Jiaotong University, Xi’an 710049, Shaanxi, China
2
School of Mechanical Engineering, Xi’an Shiyou University, Xi’an 710065, Shaanxi, China
3
Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China
4
Key Laboratory of Silicon Device Technology, Chinese Academy of Sciences, Beijing 100029, China
5
Department of Chemical and Materials Engineering, National University of Kaohsiung, No. 700, Kaohsiung University Rd. Nan-Tzu District, Kaohsiung 811, Taiwan
*
Authors to whom correspondence should be addressed.
Materials 2019, 12(16), 2601; https://doi.org/10.3390/ma12162601
Received: 25 July 2019 / Revised: 10 August 2019 / Accepted: 13 August 2019 / Published: 15 August 2019
(This article belongs to the Special Issue Advanced Materials on Electrical and Mechanical Application)
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Abstract

The silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistors (MOSFETs) suffer intensive self-heating effects due to the reduced thermal conductivity of the silicon layer while the feature sizes of devices scale down to the nanometer regime. In this work, analytical models of thermal conductivity considering the self-heating effect (SHE) in ultra-thin body fully depleted (UTB-FD) SOI MOSFETs are presented to investigate the influences of impurity, free and bound electrons, and boundary reflection effects on heat diffusion mechanisms. The thermal conductivities of thin silicon films with different parameters, including temperature, depth, thickness and doping concentration, are discussed in detail. The results show that the thermal dissipation associated with the impurity, the free and bound electrons, and especially the boundary reflection effects varying with position due to phonon scattering, greatly suppressed the heat loss ability of the nanoscale ultra-thin silicon film. The predictive power of the thermal conductivity model is enhanced for devices with sub-10-nm thickness and a heavily doped silicon layer while considering the boundary scattering contribution. The absence of the impurity, the electron or the boundary scattering leads to the unreliability in the model prediction with a small coefficient of determination. View Full-Text
Keywords: UTB-FD SOI MOSFET; self-heating effect; thermal conductivity; phonon scattering; heat diffusion UTB-FD SOI MOSFET; self-heating effect; thermal conductivity; phonon scattering; heat diffusion
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).
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Zhang, G.; Lai, J.; Su, Y.; Li, B.; Li, B.; Bu, J.; Yang, C.-F. Study on the Thermal Conductivity Characteristics for Ultra-Thin Body FD SOI MOSFETs Based on Phonon Scattering Mechanisms. Materials 2019, 12, 2601.

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