Resistive random-access memory (RRAM) is essential for developing neuromorphic devices, and it is still a competitive candidate for future memory devices. In this paper, a unified model is proposed to describe the entire electrical characteristics of...
In an era of rapidly evolving artificial intelligence and 5G communications technologies, massive data storage and processing are required for the real-time operation of digital processors in conventional wearable devices. However, classical von-Neum...
Memristors mimic synaptic functions in advanced electronics and image sensors, thereby enabling brain-inspired neuromorphic computing to overcome the limitations of the von Neumann architecture. As computing operations based on von Neumann hardware r...
In this paper, resistive random-access memory (RRAM) with InGaO (IGO) as an active layer was fabricated by radio-frequency (RF) sputtering system and the resistive switching mechanism with the different top electrode (TE) of Pt, Ti, and Al were inves...
In this study, the bipolar switching behaviors in ZnO/HfO2 bilayer resistive random-access memory (RRAM), depending on different metal top electrodes (TE), are analyzed. For this purpose, devices with two types of TE–TiN/Ti and Pd, which have v...
In the era of artificial intelligence and Internet of Things, data storage has an important impact on the future development direction of data analysis. Resistive random-access memory (RRAM) devices are the research hotspot in the era of artificial i...
Two-dimensional (2D) material-based resistive random-access memory (RRAM) has emerged as a promising solution for neuromorphic computing and computing-in-memory architectures. Compared to conventional metal-oxide-based RRAM, the novel 2D material-bas...
With the resistive random access memory (ReRAM) devices based on the Al/BaTiO3 (BTO)/ITO structure fabricated at hand, by cross-analyzing the resistive memory characteristics in terms of various barium titanate (BTO) film thicknesses, it is found tha...
Strontium titanate nickelate (STN) thin films on indium tin oxide (ITO)/glass substrate were synthesized using the sol-gel method for resistive random access memory (RRAM) applications. Aluminum (Al), titanium (Ti), tungsten (W), gold (Au) and platin...
In this study, a Pt/Ag/LZO/Pt resistive random access memory (RRAM), doped by different Li-doping concentrations was designed and fabricated by using a magnetron sputtering method. To determine how the Li-doping concentration affects the crystal latt...
Based on the electrical conductivity model built for graphene oxide, the thermal crosstalk effects of resistive random access memory (RRAM) with graphene electrode and Pt electrode are simulated and compared. The thermal crosstalk effects of Pt-RRAM...
Herein, sol–gel-processed Y2O3–Al2O3 mixed oxide-based resistive random-access-memory (RRAM) devices with different proportions of the involved Y2O3 and Al2O3 precursors were fabricated on indium tin oxide/glass substrates. The correspond...
Activation energy, bipolar resistance switching behavior, and the electrical conduction transport properties of ITOX:SiO2 thin film resistive random access memory (RRAM) devices were observed and discussed. The ITOX:SiO2 thin films were prepared usin...
Three-dimensional vertical resistive random access memory (VRRAM) is proposed as a promising candidate for increasing resistive memory storage density, but the performance evaluation mechanism of 3-D VRRAM arrays is still not mature enough. The previ...
Memristor-based neuromorphic systems have been proposed as a promising alternative to von Neumann computing architectures, which are currently challenged by the ever-increasing computational power required by modern artificial intelligence (AI) algor...
The capability of multiple valued logic (MVL) circuits to achieve higher storage density when compared to that of existing binary circuits is highly impressive. Recently, MVL circuits have attracted significant attention for the design of digital sys...
Emerging nonvolatile memory (eNVM) devices are pushing the limits of emerging applications beyond the scope of silicon-based complementary metal oxide semiconductors (CMOS). Among several alternatives, phase change memory, spin-transfer torque random...
In this study, silicon carbide (SiC) thin films for resistive random-access memory (RRAM) devices were successfully prepared using the radio-frequency magnetron sputtering method at deposition powers of 50 and 75 W for 1 h. The aluminum (Al) top elec...
Due to the difficulties associated with scaling of silicon transistors, various technologies beyond binary logic processing are actively being investigated. Ternary logic circuit implementation with carbon nanotube field effect transistors (CNTFETs)...
Yttrium oxide (Y2O3) resistive random-access memory (RRAM) devices were fabricated using the sol–gel process on indium tin oxide/glass substrates. These devices exhibited conventional bipolar RRAM characteristics without requiring a high-voltag...
We investigate the annealing environment effect on ZrO2-based resistive random-access memory (RRAM) devices. Fabricated devices exhibited conventional bipolar-switching memory properties. In particular, the vacuum-annealed ZrO2 films exhibited larger...
Memristor devices are generally suitable for incorporation in neuromorphic systems as synapses because they can be integrated into crossbar array circuits with high area efficiency. In the case of a two-dimensional (2D) crossbar array, however, the s...
Resistive random-access memory (RRAM) has been attractive as an emerging memory that can be used for computing-in-memory (CIM) and storage-class memory (SCM). However, achieving gradual resistive switching (RS) characteristics and minimizing the vari...
In this study, we prepared a strontium ferrite titanate (STF) thin film using a sol–gel process to insulate resistive random-access memory (RRAM) applications. Compared to the typical strontium titanate (STO) RRAM, the improvement in the resist...
The major hindrance for high-density application of two-terminal resistive random-access memory (RRAM) array design is unintentional sneak path leakage through adjacent cells. Herein, we propose a bilayer structure of Ta2O5/Al2O3-based bipolar type R...
Resistive random-access memory (RRAM) is a crucial element for next-generation large-scale memory arrays, analogue neuromorphic computing and energy-efficient System-on-Chip applications. For these applications, RRAM elements are arranged into Crossb...
The SrZrTiO3 (SZT) thin film prepared by sol-gel process for the insulator of resistive random-access memory (RRAM) is presented. Al was embedded in the SZT thin film to enhance the switching characteristics. Compared with the pure SZT thin-film RRAM...
Polychloro-para-xylylene (parylene-C) is a flexible and transparent polymer material which has excellent chemical stability and high biocompatibility. Here we demonstrate a polymer device based on single-component parylene-C with memory and temperatu...
In this research, nano-wedge resistive switching random-access memory (ReRAM) based on a Si3N4 switching layer and silicon bottom electrode was fabricated, and its multilevel switching characteristics were investigated. The wedge bottom electrode was...
In this work, we evaluate the resistive switching (RS) and synaptic characteristics of a fully transparent resistive random-access memory (T-RRAM) device based on indium-tin-oxide (ITO) electrodes. Here, we fabricated ITO/WOX/ITO capacitor structure...
Resistive random-access memory has emerged as a promising non-volatile memory technology, receiving substantial attention due to its potential for high operational performance, low power consumption, temperature robustness, and scalability. Two-dimen...
The resistive random-access memory (RRAM) with multi-level storage capability has been considered one of the most promising emerging devices to mimic synaptic behavior and accelerate analog computations. In this study, we investigated the reset-first...
In this study, tin oxide (SnO2) resistive random-access memory (RRAM) thin films were fabricated using the thermal evaporation and radiofrequency and dc frequency sputtering techniques for metal–insulator–metal (MIM) structures. The fabri...
In aerospace environments, high reliability and low power consumption of chips are essential. To greatly reduce power consumption, the latches of a chip need to enter the power down operation. In this operation, employing non-volatile (NV) latches ca...
Flexible electronic devices have received great attention in the fields of foldable electronic devices, wearable electronic devices, displays, actuators, synaptic bionics and so on. Among them, high-performance flexible memory for information storage...
In this work, the resistive switching characteristics of resistive random access memories (RRAMs) containing Sm2O3 and V2O5 films were investigated. All the RRAM structures made in this work showed stable resistive switching behavior. The High-Resist...
A memristor based on emerging resistive random-access memory (RRAM) is a promising candidate for use as a next-generation neuromorphic computing device which overcomes the von Neumann bottleneck. Meanwhile, due to their unique properties, including a...
Resistive Random Access Memories (RRAMs) are based on resistive switching (RS) operation and exhibit a set of technological features that make them ideal candidates for applications related to non-volatile memories, neuromorphic computing and hardwar...
In this study, we investigated the synaptic functions of TiN/Ti/TiO2/SiOx/Si resistive random access memory for a neuromorphic computing system that can act as a substitute for the von-Neumann computing architecture. To process the data efficiently,...
Organic-resistance random access memory has high application potential in the field of next-generation green nonvolatile memory. Because of their biocompatibility and environmental friendliness, natural biomaterials are suitable for the fabrication o...
Neuromorphic computing offers a promising solution to overcome the von Neumann bottleneck, where the separation between the memory and the processor poses increasing limitations of latency and power consumption. For this purpose, a device with analog...
Processing-in-Memory (PIM) based on Resistive Random Access Memory (RRAM) is an emerging acceleration architecture for artificial neural networks. This paper proposes an RRAM PIM accelerator architecture that does not use Analog-to-Digital Converters...
In this paper, the electrothermal coupling model of metal oxide resistive random access memory (RRAM) is analyzed by using a 2D axisymmetrical structure in COMSOL Multiphysics simulation software. The RRAM structure is a Ti/HfO2/ZrO2/Pt bilayer struc...
We have investigated highly flexible memristive devices using reduced graphene oxide (RGO) nanosheet nanocomposites with an embedded GQD Layer. Resistive switching behavior of poly (4-vinylphenol):graphene quantum dot (PVP:GQD) composite and HfOx hyb...
Large device variation is a fundamental challenge for resistive random access memory (RRAM) array circuit. Improved device-to-device distributions of set and reset voltages in a SiNx RRAM device is realized via arsenic ion (As+) implantation. Besides...
This work presents a memristive device based on a composite of Scindapsus aureus (SA) and gold nanoparticles (Au NPs), which exhibits excellent resistive switching characteristics and supports multiple forms of synaptic plasticity such as paired-puls...
In this paper, an overview of the influence of various modifications on ZnO-based RRAM has been conducted. Firstly, the motivation for creating new memory technology is presented. The resistive switching mechanism is explained, including its response...
Electrochemical-metallization-type resistive random access memories (ReRAMs) show promising performance as next-generation nonvolatile memory. In this paper, the Cu chemical displacement technique (CDT) is used to form the bottom electrode of ReRAM d...
In this work, we analyze a resistive switching random access memory (RRAM) device with the metal–insulator–metal structure of Al/αTiOx/Al. The transport mechanism of our RRAM device is trap-controlled space-charge limited conduction...
Ba0.6Sr0.4TiO3 (BST) thin films were deposited on ITO substrates via rf magnetron sputtering, followed by structural and morphological characterization using XRD and FE-SEM. Metal–insulator–metal (MIM) RRAM devices were fabricated by depo...
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