Multiphysics Simulation of Crosstalk Effect in Resistive Random Access Memory with Different Metal Oxides

Xie, Hao; Hu, Jun; Wang, Zhili; Hu, Xiaohui; Liu, Hong; Qi, Wei; Zhang, Shuo

doi:10.3390/mi13020266

Open AccessArticle

Multiphysics Simulation of Crosstalk Effect in Resistive Random Access Memory with Different Metal Oxides

by

Hao Xie

^1,2

,

Jun Hu

³,

Zhili Wang

⁴,

Xiaohui Hu

¹,

Hong Liu

¹,

Wei Qi

^1,*

and

Shuo Zhang

^2,*

¹

School of Information and Electrical Engineering, Zhejiang University City College, Hangzhou 310015, China

²

College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China

³

Center for Optical and Electromagnetics Research (COER), Zhejiang University, Hangzhou 310058, China

⁴

Science and Technology on Electromagnetic Compatibility Laboratory, China Ship Development and Design Centre, Wuhan 430064, China

^*

Authors to whom correspondence should be addressed.

Micromachines 2022, 13(2), 266; https://doi.org/10.3390/mi13020266

Submission received: 21 January 2022 / Revised: 1 February 2022 / Accepted: 4 February 2022 / Published: 6 February 2022

(This article belongs to the Section D: Materials and Processing)

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Abstract

Based on the electrical conductivity model built for graphene oxide, the thermal crosstalk effects of resistive random access memory (RRAM) with graphene electrode and Pt electrode are simulated and compared. The thermal crosstalk effects of Pt-RRAM with different metal oxides of TiO_x, NiO_x, HfO_x, and ZrO_x are further simulated and compared to guide its compatibility design. In the Pt-RRAM array, the distributions of oxygen vacancy density and temperature are obtained, and the minimum spacing between adjacent conduction filaments to avoid device operation failure is discussed. The abovementioned four metal oxides have different physical parameters such as diffusivity, electrical conductivity, and thermal conductivity, from which the characters of the RRAMs based on one of the oxides are analyzed. Numerical results reveal that thermal crosstalk effects are severe as the spacing between adjacent conduction filaments is small, even leading to the change of logic state and device failure.

Keywords: finite difference method; graphene electrode; metal oxide; oxygen vacancy; resistive random access memory; thermal crosstalk

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MDPI and ACS Style

Xie, H.; Hu, J.; Wang, Z.; Hu, X.; Liu, H.; Qi, W.; Zhang, S. Multiphysics Simulation of Crosstalk Effect in Resistive Random Access Memory with Different Metal Oxides. Micromachines 2022, 13, 266. https://doi.org/10.3390/mi13020266

AMA Style

Xie H, Hu J, Wang Z, Hu X, Liu H, Qi W, Zhang S. Multiphysics Simulation of Crosstalk Effect in Resistive Random Access Memory with Different Metal Oxides. Micromachines. 2022; 13(2):266. https://doi.org/10.3390/mi13020266

Chicago/Turabian Style

Xie, Hao, Jun Hu, Zhili Wang, Xiaohui Hu, Hong Liu, Wei Qi, and Shuo Zhang. 2022. "Multiphysics Simulation of Crosstalk Effect in Resistive Random Access Memory with Different Metal Oxides" Micromachines 13, no. 2: 266. https://doi.org/10.3390/mi13020266

APA Style

Xie, H., Hu, J., Wang, Z., Hu, X., Liu, H., Qi, W., & Zhang, S. (2022). Multiphysics Simulation of Crosstalk Effect in Resistive Random Access Memory with Different Metal Oxides. Micromachines, 13(2), 266. https://doi.org/10.3390/mi13020266

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Multiphysics Simulation of Crosstalk Effect in Resistive Random Access Memory with Different Metal Oxides

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