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Materials 2018, 11(2), 265;

Impact of Electrode Surface Morphology in ZnO-Based Resistive Random Access Memory Fabricated Using the Cu Chemical Displacement Technique

Department of Electronic Engineering, Feng Chia University, Taichung 40724, Taiwan
Department of Electronic Engineering, National Chin-Yi University of Technology, Taichung 41170, Taiwan
Department of Electronic Engineering, National United University, Miaoli 36003, Taiwan
Author to whom correspondence should be addressed.
Received: 11 January 2018 / Revised: 31 January 2018 / Accepted: 8 February 2018 / Published: 9 February 2018
(This article belongs to the Section Thin Films)
Full-Text   |   PDF [4752 KB, uploaded 9 February 2018]   |  


Electrochemical-metallization-type resistive random access memories (ReRAMs) show promising performance as next-generation nonvolatile memory. In this paper, the Cu chemical displacement technique (CDT) is used to form the bottom electrode of ReRAM devices. Compared with conventional deposition methods, the Cu-CDT method has numerous advantages for ReRAM fabrication, including low cost, low temperature fabrication, and the provision of unconsolidated Cu film and large surface roughness. Moreover, the Cu-CDT method is a favorable candidate for overcoming the Cu etching problem and is thus suitable for fabricating ReRAM devices. Using this technique, the surface morphology of a thin Cu film can be easily controlled. The obtained results show that the electric fields during the Forming and SET operations decreased, and the on-state current increased in the RESET operation, as the Cu-CDT displacement time was increased. The Cu-CDT samples exhibited a low operation field, large memory window (>106), and excellent endurance switching cycle characteristics. Moreover, this paper proposes a model to explain the electrical characteristics of ReRAM, which are dependent on the surface morphology. View Full-Text
Keywords: ECM; resistive memory; ReRAM; chemical displacement; Cu-CDT ECM; resistive memory; ReRAM; chemical displacement; Cu-CDT

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Wu, C.-C.; You, H.-C.; Lin, Y.-H.; Yang, C.-J.; Hsiao, Y.-P.; Liao, T.-P.; Yang, W.-L. Impact of Electrode Surface Morphology in ZnO-Based Resistive Random Access Memory Fabricated Using the Cu Chemical Displacement Technique. Materials 2018, 11, 265.

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